TLN105B(F) TOSHIBA Infrared LED GaAs Infrared Emitter TLN105B(F) Lead(Pb)-Free Remote−Control Systems Opto−Electronic Switches Unit: mm • High radiant intensity: IE = 20mW / sr (typ.) • Wide half−angle value: θ1/2 = ±23.5° (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible. • TPS703(F) PIN photodiode with filter to screen out visible light available as detector for remote control Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta > 25°C) Pulse forward current Reverse voltage (Note) Symbol Rating Unit IF 100 mA ΔIF / °C −1.33 mA / °C IFP 1 A VR 5 V Power dissipation PD 150 mW Operating temperature Topr −20~75 °C Storage temperature Tstg −30~100 °C TOSHIBA 4−6B5 Weight: 0.3 g (typ.) Pin Connection Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in 1 2 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the 1. Anode absolute maximum ratings. 2. Cathode Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note): Pulse width ≦ 100μs, repetitive frequency = 100 Hz Optical And Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Typ. Max Unit ― 1.35 1.5 V Forward voltage VF Reverse current IR VR = 5 V ― ― 10 μA Radiant intensity IE IF = 50 mA 12 20 ― mW / sr Radiant power PO IF = 50 mA ― 11 ― mW Capacitance CT VR = 0, f = 1 MHz ― 20 ― pF λP IF = 50 mA ― 950 ― nm Δλ 1 θ 2 IF = 50 mA ― 50 ― nm IF = 50 mA ― ±23.5 ― ° Peak emission wavelength Spectral line half width Half value angle IF = 100 mA Min 1 2007-10-01 TLN105B(F) Precautions Please be careful of the followings. 1. Soldering must be performed under the lead stopper. 2. Soldering temperature: 260°C max Soldering time: 5s max 3. When forming the leads, bend each lead under the stopper without leaving forming stress to the body of the device. Soldering must be performed after the leads have been formed. 4. Radiation intensity falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1. I E (t) PO (t) = I E (0) PO (0) 2 2007-10-01 TLN105B(F) IF – V F 100 50 (mA) 100 80 Forward current IF Allowable forward current IF (mA) IF – Ta 120 60 40 Ta = 25°C 30 10 5 3 20 0 0 20 60 40 80 100 120 1 0.8 140 0.9 Ambient temperature Ta (°C) 1.0 1.1 1.2 1.3 Forward voltage VF ΔVF / ΔTa – IF 1.4 1.5 1.6 (V) IFP – VFP (typ.) 1000 ‐2.4 500 ‐2.0 300 ‐1.6 Pulse forward current IFP (mA) Forward voltage temperature coefficient ∆VF / ∆Ta (mV / °C) (typ.) ‐1.2 ‐0.8 ‐0.4 5 3 1 10 30 Forward current IF 50 100 (mA) 100 50 30 10 5 Pulse width ≦ 100μs 3 Repetitive frequency = 100Hz Ta = 25°C Allowable pulse forward current IFP (mA) IFP – PW 1 1.0 Ta = 25°C 1.2 1.4 1.6 1.8 Pulse forward voltage 2.0 2.2 2.4 2.6 VFP (V) 1000 500 300 f = 100Hz 100 10k 5k 2k 1k 500 200 50 30 3μ 10μ 30μ 100μ Pulse width 300μ PW 1m 3m 10m (s) 3 2007-10-01 TLN105B(F) IEP – IFP Relative IE – Ta (typ.) 1.4 Pulse width ≦ 100μs Repetitive frequency 500 = 100Hz 300 Ta = 25°C 100 50 30 10 5 3 IF = 50mA 1.0 0.8 0.6 0.4 0.2 1 0 -40 0.5 -20 0 20 40 60 80 30 10 100 300 Distance Characteristics 1000 100 1000 IEP = 200mW / sr at IFP ~300mA, f = 100Hz, PW = 100μs Distance Characteristics 1 10 ISC (μA) IE = 10mW / sr TPS703 short circuit current 10 IE = 20mW / sr 100 (mW / cm2) TPS703 short circuit current ISC (μA) 1000 10 100 Converted radiant incidence E 100 1 10 0.1 1 0.01 0.1 0.1 3 5 10 Distance 30 50 100 (mW / cm2) 5 Converted radiant incidence E 3 Pulse forward current IFP (mA) 1 1 100 Ambient temperature Ta (°C) 0.3 0.1 1 (typ.) 1.2 Relative radiant intensity Pulse radiant intensity IEP (mW / sr) 1000 0.001 0.01 300 d (mm) IE = 20mW / sr at IF ~50mA 0.001 0.01 0.0001 0.1 Distance 4 1 10 d (m) 2007-10-01 TLN105B(F) Wavelength Characteristic 1.2 (typ.) Radiation Pattern (typ.) IF = 50mA Ta = 25°C Relative intensity 1.0 (Ta = 25°C) 0.8 20° 10° 0° 10° 20° 30° 30° 40° 40° 0.6 50° 50° 0.4 60° 60° 70° 70° 0.2 80° 80° 0 860 880 900 920 940 960 980 90° 1000 0 0.2 0.4 0.6 0.8 90° 1.0 Relative intensity Wavelength λ (nm) 5 2007-10-01 TLN105B(F) RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01