CTLT3410-M521 (NPN) CTLT7410-M521 (PNP) SURFACE MOUNT COMPLEMENTARY SILICON LOW VCE (SAT) TRANSISTORS Central Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT3410-M521 and CTLT7410-M521 are Low VCE (SAT) transistors in a very small leadless 1x2mm surface mount package, designed for applications where small size, operational efficiency, and low energy consumption are prime requirements. Due to the leadless package design these devices are capable of dissipating up to 3 times the power of similar devices in comparable sized surface mount packages. FEATURES: Top View • • • Bottom View TLM521 CTLT3410-M521 (NPN) Marking Code: CB CTLT7410-M521 (PNP) Marking Code: CD MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance * • High Collector Current • Small TLM 1x2mm case High Operational Efficiency High Power to Footprint Ratio VCE(SAT) @ 1.0A = 250mV (Typ) APPLICATIONS: • DC/DC Converters • Switching Circuits • LCD Backlighting SYMBOL VCBO VCEO VEBO IC ICM PD TJ,Tstg ΘJA TEST CONDITIONS VCB=40V VEB=6.0V IC=100µA IC=10mA IE=100µA IC=50mA, IB=5.0mA IC=100mA, IB=10mA IC=200mA, IB=20mA IC=500mA, IB=50mA IC=800mA, IB=80mA IC=1.0A, IB=100mA IC=800mA, IB=80mA VCE=1.0V, IC=10mA VCE=1.0V, IC=10mA VCE=1.0V, IC=100mA VCE=1.0V, IC=500mA VCE=1.0V, IC=1.0A FR-4 Epoxy PCB with copper mounting pad area of 33mm2 • Battery Powered Portable Equipment 40 25 6.0 1.0 1.5 0.9 UNITS V V V A A W* -65 to +150 139 °C °C/W * ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE hFE TM MIN TYP NPN PNP MAX 100 100 40 25 6.0 20 35 75 130 200 250 100 100 100 50 25 40 80 150 220 275 50 75 150 250 400 450 1.1 0.9 UNITS nA nA V V V mV mV mV mV mV mV V V 300 continued on next page R1 (27-April 2006) Central TM CTLT3410-M521 (NPN) CTLT7410-M521 (PNP) SURFACE MOUNT COMPLEMENTARY SILICON LOW VCE (SAT) TRANSISTORS Semiconductor Corp. ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN fT VCE=10V, IC=50mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz (CTLT3410-M521) Cob VCB=10V, IE=0, f=1.0MHz (CTLT7410-M521) TYP MAX 10 15 UNITS MHz pF pF TLM521 CASE - MECHANICAL OUTLINE LEAD CODE: 1) COLLECTOR 2) COLLECTOR 3) COLLECTOR 4) BASE 5) EMITTER Suggested mounting pad layout for maximum power dissipation (Dimensions in mm) For standard mounting refer to TLM521 Package Details PIN CONFIGURATION CTLT3410-M521 (NPN) CTLT7410-M521 (PNP) CTLT3410-M521 (NPN) Marking Code: CB CTLT7410-M521 (PNP) Marking Code: CD R1 (27-April 2006)