CENTRAL CTLM7410

CTLM3410-M832D
CTLM7410-M832D
CTLM3474-M832D
SURFACE MOUNT
DUAL, LOW VCE (SAT)
SILICON TRANSISTORS
TLM832D CASE
MARKING CODES:
CTLM3410-M832D: CFG
CTLM7410-M832D: CFH
CTLM3474-M832D: CFJ
APPLICATIONS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLM3410M832D (Dual NPN), CTLM7410-M832D (Dual PNP),
and CTLM3474-M832D (Complementary NPN & PNP)
are Low VCE(SAT) Transistors packaged in the small,
thermally efficient, 3x2mm Tiny Leadless Module
(TLM™) surface mount case. These devices are
designed for applications where small size, operational
efficiency, and low energy consumption are the prime
requirements. Due to its leadless package design this
device is capable of dissipating up to 4 times the power
of similar devices in comparable sized surface mount
packages.
FEATURES
• Switching Circuits
• DC / DC Converters
• LCD Backlighting
• Battery powered / Portable Equipment
applications including Cell Phones,
Digital Cameras, Pagers, PDAs,
Notebook PCs, etc.
• Dual Chip Device
• High Current (1.0A) Transistors
• Low VCE(SAT) Transistors (450mV @ IC=1.0A MAX)
• High Power to Footprint Ratio of 275mW per sq mm
(Package Power Dissipation / Package Surface Area)
• Small TLM 3x2mm Leadless Surface Mount Package
• Complementary Devices
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise
TYP
SYMBOL
TEST CONDITIONS
MIN
NPN PNP
ICBO
VCB=40V
IEBO
VEB=6.0V
BVCBO
IC=100μA
40
BVCEO
IC=10mA
25
BVEBO
IE=100μA
6.0
VCE(SAT)
IC=50mA, IB=5.0mA
20
25
VCE(SAT)
IC=100mA, IB=10mA
35
40
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm2.
UNITS
V
V
V
A
W
°C
°C/W
40
25
6.0
1.0
1.65
-65 to +150
76
noted)
MAX
100
100
50
75
UNITS
nA
nA
V
V
V
mV
mV
R2 (19-February 2010)
CTLM3410-M832D
CTLM7410-M832D
CTLM3474-M832D
SURFACE MOUNT
DUAL, LOW VCE (SAT)
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C)
TYP
SYMBOL
TEST CONDITIONS
MIN
NPN PNP
VCE(SAT)
IC=200mA, IB=20mA
75
80
VCE(SAT)
IC=500mA, IB=50mA
130
150
VCE(SAT)
IC=800mA, IB=80mA
200
220
VCE(SAT)
IC=1.0A, IB=100mA
250
275
VBE(SAT)
IC=800mA, IB=80mA
VBE(ON)
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
hFE
VCE=1.0V, IC=500mA
100
hFE
VCE=1.0V, IC=1.0A
50
fT
VCE=10V, IC=50mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz (CTLM3410-M832D)
Cob
VCB=10V, IE=0, f=1.0MHz (CTLM7410-M832D)
MAX
150
250
400
450
1.1
0.9
UNITS
mV
mV
mV
mV
V
V
300
10
15
MHz
pF pF
TLM832D CASE - MECHANICAL OUTLINE
CTLM3410-M832D
Dual NPN
Marking Code: CFG
CTLM7410-M832D
Dual PNP
Marking Code: CFH
LEAD CODES:
1) Base Q1
2) Emitter Q1
3) Base Q2
4) Emitter Q2
* Note:
- Exposed pad P1 common to pins 7 and 8
- Exposed pad P2 common to pins 5 and 6
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CTLM3474-M832D
Complementary NPN & PNP
Marking Code: CFJ
5)
6)
7)
8)
Collector
Collector
Collector
Collector
Q2
Q2
Q1
Q1
R2 (19-February 2010)