Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a flexible final or driver stage for 802.16 equipment in the 2.7-3.8GHz bands. It can run from a 3V to 6V supply. It is prematched to ~5 ohms on the input for broadband performance and ease of matching at the board level. It features an output power detector, on/off power control, ESD protection, excellent overall robustness and a proprietary hand reworkable and thermally enhanced SOF-26 package. This product features a RoHS Compliant and Green package with matte tin finish, designated by the ‘Z’ suffix. Functional Block Diagram SZP-3026Z 2.7-3.8GHz 2W InGaP Amplifier Pb Proprietary SOF-26 Package Product Features • • On-chip Output Power Detector Input Prematched to ~5 ohms Proprietary Low Thermal Resistance Package Hand Solderable and Easy Rework RFOUT RFIN Active Bias Power Up/Dow n Control 802.11g 54Mb/s Class AB Performance Pout = 27dBm @ 2.5% EVM, Vcc 6V, 590mA SZP-3026 Vbias = 5V P1dB = 33.5dBm @ 5V Pout = 26dBm @ 2.5% EVM, Vcc 5V, 570mA • • • Vcc = 5V RoHS Compliant & Green Package • Power up/down control < 1µs Applications • • Power Detector 802.16 WiMAX Driver or Output Stage WLL Key Specifications Symbol fO P1dB Parameters: Test Conditions, 3.4-3.6GHz App circuit, Z0 = 50Ω, VCC = 5.0V, Iq = 460mA, TBP = 30ºC Unit Min. Frequency of Operation MHz 2700 Output Power at 1dB Compression – 3.5GHz dBm 32.0 33.5 dB 10.3 11.8 Typ. 3800 S21 Small Signal Gain – 3.5GHz Pout Output power at 2.5% EVM 802.11g 54Mb/s - 3.5GHz dBm 26.0 IM3 Third Order Suppression (Pout=23dBm per tone) - 3.5GHz dBc -44 NF Noise Figure at 3.5GHz dB 5.9 IRL Worst Case Input Return Loss 3.4-3.6GHz ORL Worst Case Output Return Loss 3.4-3.6GHz Vdet Range Icq IVPC Ileak Rth, j-l Output Voltage Range for Pout=10dBm to 33dBm dB Quiescent Current (Vcc = 5V) mA mA Vcc Leakage Current (Vcc = 5V, Vpc = 0V) 6 V Power Up Control Current (Vpc=5V) Thermal Resistance (junction - lead) 10 -41 14 9 0.9 to 2.2 415 460 510 2.3 µA ºC/W Max. 10 12 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-104666 Rev B Preliminary SZP-3026Z 2.7-3.8GHz 2W Power Amp Typical Performance with Appropriate App Circuit (Vcc=5V, Icq=460mA, * 802.11g 54Mb/s Parameter Units 2.7GHz 3.0GHz 3.3GHz 3.4GHz 3.5GHz 3.7GHz 3.8GHz Gain@Pout=26dBm dB 13 12.5 12.1 12.0 11.9 11.1 10.4 P1dB dBm 33.5 33.5 33.6 33.9 33.6 32.7 32.3 Pout @ 2.5% EVM* dBm 26 26 26 26 26 25.5 25 Current @ Pout 2.5% EVM* mA 590 590 580 580 570 560 550 Input Return Loss dB 15 15 17 16 15 12 12 Output Return Loss dB 9 9 9 9 10 9 9 Pin Out Description Pin # Function 1 VBIAS Description 2 RFIN This is the RF input pin and has a DC voltage present. An external DC block is required. 3 VPC Power up/down control pin. The voltage on this pin should never exceed the voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited < 10mA. 4 VDET This is the output port for the power detector. It samples the power at the input of the amplifier. 5 RFOUT/VCC 6 NC GND GND This is the supply voltage for the active bias circuit. This is the RF output pin and DC connection to the collector. This pin is not connected internal to the package. Buss it to pin 5 as shown on the app circuit to achieve the specified performance. These pins are DC connected to the backside paddle. They provide goos thermal connection to the backside paddle for hand soldering and rework. Many thermal and electrical GND vias are recommended as shown in the landing pattern. Absolute Maximum Ratings Parameters VC1 Collector Bias Current (IVC1) Device Voltage (Vcc) Power Dissipation Value Unit 1500 mA 7.0 V 6 W -40 to +85 ºC Max RF Input Power for 50 ohm output load 27 dBm Max RF Input Power for 10:1 VSWR output load 23 dBm -40 to +150 ºC Operating Junction Temperature (TJ) +150 ºC ESD Human Body Model 500 V Operating Lead Temperature (TL) Storage Temperature Range Simplified Device Schematic GND VBIAS 1 RFIN 2 VPC 3 Bias 6 NC 5 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. RFOUT/VCC 4 VDET GND Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH’ j-l Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-104666 Rev B Preliminary SZP-3026Z 2.7-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 460mA, T=25C) Source EVM = 0.6%, not deembedded from data. EVM vs Pout, F=3.4GHz 802.11g, OFDM, 54Mb/s, 64QAM 6 6 5 5 4 4 EVM(%) EVM(%) EVM vs Pout, T=+25C 802.11g, OFDM, 54Mb/s, 64QAM 3 3 2 2 1 1 0 0 12 14 16 18 20 22 24 26 28 30 12 14 16 18 20 Pout(dBm) 3.4GHz 3.5GHz 3.6GHz 3.7GHz -40c EVM vs Pout, F=3.6GHz 802.11g, OFDM, 54Mb/s, 64QAM 24 26 28 30 +25c 26 28 30 +85c EVM vs Pout, F=3.7GHz 802.11g, OFDM, 54Mb/s, 64QAM 6 6 5 5 4 4 EVM(%) EVM(%) 22 Pout(dBm) 3 3 2 2 1 1 0 0 12 14 16 18 20 22 24 26 28 30 12 14 16 18 20 Pout(dBm) -40c 22 24 Pout(dBm) +25c +85c -40c IM3 vs Pout (2 tone avg.), T=+25C Tone Spacing=1MHz +25c +85c Typical Gain vs Pout, F=3.4GHz 14 -35 13 -40 12 Gain(dB) IM3(dBc) -45 -50 11 -55 10 -60 9 -65 8 18 20 22 24 26 28 14 16 18 20 22 Pout(dBm) 3.4GHz 3.5GHz 24 26 28 30 32 34 36 Pout(dBm) 3.6GHz 303 South Technology Court Broomfield, CO 80021 3.7GHz Phone: (800) SMI-MMIC 3 -40c +25c +85c http://www.sirenza.com EDS-104666 Rev B Preliminary SZP-3026Z 2.7-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 460mA, T=25C) Typical Gain vs Pout, F=3.7GHz 14 13 13 12 12 Gain(dB) Gain(dB) Typical Gain vs Pout, F=3.6GHz 14 11 11 10 10 9 9 8 8 14 16 18 20 22 24 26 28 30 32 34 36 14 16 18 20 22 24 Pout(dBm) -40c 26 28 30 32 34 36 Pout(dBm) +25c +85c -40c Narrowband S11 - Input Return Loss +25c +85c Narrowband S12 - Reverse Isolation 0 -21 -23 -5 S12(dB) S11(dB) -25 -10 -15 -27 -29 -31 -20 -33 -25 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 -35 3.00 4.00 3.10 3.20 3.30 Frequency(GHz) -40C +25C 3.40 3.50 3.60 3.70 3.80 3.90 4.00 3.90 4.00 Frequency(GHz) +85C -40C Narrowband S21 - Forward Gain +25C +85C Narrowband S22 - Output Return Loss 15 0 14 13 -5 11 S22(dB) S21(dB) 12 10 9 -10 -15 8 7 -20 6 5 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 -25 3.00 3.10 Frequency(GHz) -40C +25C 3.20 3.30 3.40 3.50 3.60 3.70 3.80 Frequency(GHz) +85C 303 South Technology Court Broomfield, CO 80021 -40C Phone: (800) SMI-MMIC 4 +25C +85C http://www.sirenza.com EDS-104666 Rev B Preliminary SZP-3026Z 2.7-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 460mA, T=25C) DC Supply Current (Idc) vs Pout, T=+25C DC Supply Current (Idc) vs Pout, F=3.5GHz 1.2 1.2 1.0 Idc(A) Idc(A) 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 15 17 19 21 23 25 27 29 31 33 35 15 17 19 21 Pout(dBm) 3.4GHz 3.5GHz 23 25 27 29 31 33 35 Pout(dBm) 3.6GHz 3.7GHz -40c Noise Figure vs Freq O.T. +25c +85c RF Power Detector (Vdet) vs Pout, F=3.4GHz 7.5 2.6 2.4 6.5 2.2 Vdet(V) NF(dB) 2 5.5 4.5 1.8 1.6 1.4 3.5 1.2 2.5 0.8 1 3.3 3.4 3.5 3.6 3.7 3.8 15 20 Frequency(GHz) -40C +25C +85C -40c RF Power Detector (Vdet) vs Pout, F=3.6GHz 30 35 +25c +85c RF Power Detector (Vdet) vs Pout, F=3.7GHz 2.6 2.6 2.4 2.4 2.2 2.2 2 Vdet(V) 2 Vdet(V) 25 Pout(dBm) 1.8 1.6 1.8 1.6 1.4 1.4 1.2 1.2 1 1 0.8 0.8 15 20 25 30 35 15 Pout(dBm) -40c +25c 20 25 30 35 Pout(dBm) +85c 303 South Technology Court Broomfield, CO 80021 -40c Phone: (800) SMI-MMIC 5 +25c +85c http://www.sirenza.com EDS-104666 Rev B Preliminary SZP-3026Z 2.7-3.8GHz 2W Power Amp Measured 3.4-3.6 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 460mA, T=25C) Broadband S11 - Input Return Loss Broadband S12 - Reverse Isolation 0 -10 -15 -5 S12(dB) S11(dB) -20 -10 -15 -25 -30 -20 -35 -25 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 1.0 2.0 Frequency(GHz) -40C +25C 3.0 4.0 5.0 6.0 5.0 6.0 Frequency(GHz) +85C -40C Broadband S21 - Forward Gain +25C +85C Broadband S22 - Output Return Loss 15 0 -2 10 S22(dB) S21(dB) -4 5 -6 -8 0 -10 -5 -12 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 Frequency(GHz) -40C +25C 1.0 2.0 3.0 4.0 Frequency(GHz) +85C 303 South Technology Court Broomfield, CO 80021 -40C Phone: (800) SMI-MMIC 6 +25C +85C http://www.sirenza.com EDS-104666 Rev B Preliminary SZP-3026Z 2.7-3.8GHz 2W Power Amp 3.4-3.6 GHz Evaluation Board Schematic For V+ = Vcc = Vpc = 5.0V, Iq=460mA Bias 1 6 5 2 3 4 SZP-3026 3.4-3.6GHz Evaluation Board Layout For V+ = Vcc = Vpc = 5.0V, Iq=460mA Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper R2 C1 C3 C2 C4 L1 C5 Q1 C8 C7 C6 R4 R3 R1 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 7 http://www.sirenza.com EDS-104666 Rev B Preliminary SZP-3026Z 2.7-3.8GHz 2W Power Amp Part Symbolization The part will be symbolized with a “SZP-3026Z” to designate it as a RoHS green compliant product. Marking designator will be on the top surface of the package. Part Number Ordering Information Part Number Reel Size Devices/Reel SZP-3026Z* 13” 3000 * Matte tin finish Package Outline Drawing ( dimensions in mm [in] ): 4016 Recommended Metal Land Pattern (dimensions in mm [in]): 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 8 http://www.sirenza.com EDS-104666 Rev B