SBF-5089 SBF-5089Z Product Description Sirenza Microdevices’ SBF-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Product Features • Available in Lead Free, RoHS compliant, & Green packaging • IP3 = 41dBm @ 240MHz • Stable Gain Over Temperature • Robust 1000V ESD, Class 1C • Operates From Single Supply • Low Thermal Resistance G ain & R etu rn L o ss V s F req u en cy + 25c 0 22 .5 -5 S2 1 S1 1 S2 2 -10 17 .5 -15 15 -20 12 .5 -25 10 -30 7 .5 -35 5 IRL, ORL (dB) Gain(dB) 20 Applications • Receiver IF Applications • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite Terminals -40 0 10 0 20 0 3 00 4 00 50 0 60 0 7 00 80 0 90 0 F re q u e n c y(M Hz ) Symbol G Parameter Small Si gnal Gai n P 1dB Output Power at 1dB C ompressi on OIP3 Output Thi rd Order Intercept Poi nt IRL RoHS Compliant & Green Package DC-500 MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. 25 Pb U nits Frequency Min. Typ. Max. dB 70 MHz 240 MHz 500 MHz 18.5 18.0 20.5 20.0 19.5 21.5 21.0 dB m 70 MHz 240 MHz 400 MHz 19.2 21 21 20.7 70 MHz 240 MHz 400 MHz 37.5 39.0 41.0 39.5 dB m Input Return Loss dB 500 MHz 14 18 Output Return Loss dB 500 MHz 12 16 NF Noi se Fi gure dB 500 MHz VD D evi ce Operati ng Voltage V ID D evi ce Operati ng C urrent mA ORL RTH, j-l Thermal Resi stance (juncti on to lead) Test Conditions: VS = 8 V RBIAS = 33 Ohms °C /W ID = 90 mA Typ. TL = 25ºC 2.8 3.8 4.5 4.9 5.3 82 90 98 43 OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms, App circuit page 4 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2004 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-103413 Rev. C Preliminary SBF-5089 DC-500 MHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Frequency (MHz) Frequency (MHz) Symbol G Parameter Unit 70 100 240 Small Signal Gain 400 500 850 dB 20.5 20.4 20.1 19.8 19.5 18.2 OIP3 Output Third Order Intercept Point dB m 39 39 41 39.5 39 34 P 1dB Output Power at 1dB Compression dB m 21.0 21.0 21.0 20.7 20.8 18.6 IRL Input Return Loss dB 19.4 19.9 20.1 20.9 22.0 26.8 ORL Output Return Loss dB 17.2 15.8 18.6 24.0 37.5 15.5 S 12 Reverse Isolation dB 25.2 22.4 22.3 22.3 22.3 22.4 NF Noise Figure dB 2.7 2.8 2.7 2.8 2.8 2.8 TestConditions: Conditions: Test VVSS==88VV 39Ohms Ohms RRBIAS==33 BIAS 80mA mATyp. Typ. IDID==90 25ºC TTL==25ºC L OIP3Tone ToneSpacing Spacing==11MHz, MHz, Pout Poutper pertone tone==00dBm dBm OIP 3 50 Ohms Ohms using app circuit see page 4 ZZS==ZZL== 50 S L Absolute Maximum Ratings P1dB vs Temp Output Power (dBm) 21.5 21 20.5 20 19.5 19 +25c 18.5 -40c 18 +85c 150 250 350 450 550 Frequency(MHz) 650 750 Absolute Limit 150 mA Max. Device Voltage (VD) 6V Max. RF Input Power +19 dBm Max Operating Dissipated Power 0.8 W Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. 17.5 50 Parameter Max. Device Current (ID) 850 Bias Conditions should also satisfy the following expression: TL=TLEAD IDVD < (TJ - TL) / RTH, j-l Noise Figure vs Temp 5 41 4.5 39 4 37 3.5 NF (dB) TOIP (dB) TOIP vs Temp 43 35 33 31 +25c 29 -40c +85c 27 25 3 2.5 2 1.5 +25c 1 -40c 0.5 +85c 0 50 150 250 350 450 550 650 750 850 50 150 Frequency(MHz) 303 South Technology Court, Broomfield, CO 80021 250 350 450 550 650 750 850 Frequency(MHz) Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-103413 Rev. C Preliminary SBF-5089 DC-500 MHz Cascadable MMIC Amplifier Test Conditions : Vs = 8v, R-bias = 33ohm, Id = 90mA, Temp = +25c |S11| vs. Frequency |S21| vs. Frequency -10 22 -12 21.5 -14 +25c -40c 21 +25c +85c -40c 20.5 +85c -18 S21 (dB) S11 (dB) -16 -20 -22 -24 20 19.5 19 18.5 -26 18 -28 17.5 -30 17 50 150 250 350 450 550 650 750 850 50 150 250 Frequency (MHz) 550 650 750 850 |S22| vs. Frequency -10 -20 -20.5 +25c -40c -21 +85c -12 +25c -14 +85c -21.5 -16 -22 -18 S22 (dB) S12 (dB) 450 Frequency (MHz) |S12| vs. Frequency -22.5 -23 -40c -20 -22 -23.5 -24 -24 -26 -24.5 -28 -30 -25 50 150 250 350 450 550 650 750 50 850 150 Frequency (MHz) 100 350 450 550 650 750 850 NOTE: Output Return Loss Can be improved at low end of band with L1 selection, see Page 4 app circuit. +25c -40c 80 250 Frequency (MHz) Bias Sweep vs. Temperature Current(mA) 350 +85c 60 40 20 0 0 2 4 6 8 Source voltage 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-103413 Rev. C Preliminary SBF-5089 DC-500 MHz Cascadable MMIC Amplifier Basic Application Circuit Application Circuit Element Values R BIAS VS 1 uF RF in CD 1000 pF 100 240 500 850 CB 1uF 1000 pF 1000 pF 220 pF 100pF CD 1 uF 100 pF 100 pF 100 pF 68 pF LC 6.8uH 1.2 uH 1.2uH 68 nH 33 nH L1 6.8nH 6.8nH 6.8nH 6.8nH 6.8nH RF out 1 SBF-5089 3 L1 2 CB 70 LC 4 Frequency (Mhz ) R eference D esignator Recommended Bias Resistor Values for ID=90mA RBIAS=( VS-VD ) / ID CB Supply Voltage(VS) RBIAS 7.5 V 27 8V 33 10 V 55 12 V 77 Note: RBIAS provides DC bias stability over temperature. Rbias Mounting Instructions CD 1. NOTE: For broadband RF unconditional stability do not put GND vias under the exposed backside GND paddle. LC CB L1 2. Solder the copper pad on the backside of the device package to the ground plane. CB 3. Use a large ground pad area with many plated through-holes as shown. 4. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Part Identification Marking 4 BF5Z Tin-Lead 2 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 3 3 3 1 2 3 3 2 2 1 Function 1 4 BF5 1 Pin # Part Number Ordering Information Appropriate precautions in handling, packaging and testing devices must be observed. 303 South Technology Court, Broomfield, CO 80021 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Lead Free Caution: ESD sensitive Description Part N umber R eel Siz e D evices/R eel SBF-5089 7" 1000 SBF-5089Z 7" 1000 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-103413 Rev. C Preliminary SBF-5089 DC-500 MHz Cascadable MMIC Amplifier PCB Pad Layout Dimensions in inches [millimeters] 0.3255 [8.27] 0.0750 [1.91] (2X) 0.0640 [1.63] (2X) 0.0540 [1.37] (2X) 0.0250 [0.64] (2X) NOTE: For broadband RF unconditional stability do not put vias under exposed gnd 0.0775 [1.97] 0.2560 [6.50] 0.0750 [1.91] 0.0899 [2.28] 0.0449 [1.14] INPUT/OUTPUT TRACE CENTERLINE 0.0600 [1.52] 0.0450 [1.14] 0.0506 [1.29] 0.0800 [2.03] 0.0420 [1.07] 0.0270 [0.69] Ø0.0200 [Ø0.51] GND Via 9X 0.0540 [1.37] DEVICE CENTERLINE See Application Note AN-075 For Package Outline Drawing 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-103413 Rev. C