Reliability Qualification Report SZP-3026Z Products Qualified by Similarity SZP-2026Z SPB-2026Z SPA-1426Z SPA-1526Z Initial Qualification June 2005 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Data subject to change. 303 S. Technology Ct, Broomfield CO, 80021 Phone: (800) SMI-MMIC http://www.sirenza.com Document RQR-104612- Rev. C SZP-3026Z Reliability Qualification Report I. Qualification Overview The SZP-3026Z has demonstrated reliable operation by passing all qualification testing in our product qualification test plan. The SZP-3026Z has been subjected to stress testing such as humidity (HAST and autoclave), extreme hot and cold environments (temperature cycling), moisture sensitivity (MSL-1 and solder reflow testing), and operational life testing. II. Introduction Sirenza Microdevice’s SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT). It is designed as a flexible final or driver stage for 802.16 equipment in the 2.7-3.8GHz bands and can run from a 3V to 6V supply. III. Fabrication Technology The SZP-3026Z amplifier is manufactured using a InGaP Heterojunction Bipolar Transistor (HBT) technology. The devices are fabricated using MOCVD epitaxy technology which produces consistent and reproducible performance from lot to lot. Through the use of InGaP emitters, a mature MMIC fabrication process and rigorous in-process monitoring, excellent reliability with MTTF of greater than 1 X 106 hrs at 150°C junction temperature has been achieved. IV. Package Type The SZP-3026Z power amplifier is packaged in a plastic encapsulated SOF-26 package that is assembled using a highly reproducible automated assembly process. The die is mounted using an industry standard thermally and electrically conductive silver epoxy. This product is RoHS compliant and Green package with matte tin finish. Figure 1 : Photograph of SOF-26 Encapsulated Plastic Package SZP-3026Z Reliability Qualification Report V. Qualification Methodology The Sirenza Microdevices qualification process consists of a series of tests designed to stress various potential failure mechanisms. This testing is performed to ensure that Sirenza Microdevices products are robust against potential failure modes that could arise from the various die and package failure mechanisms stressed. The qualification testing is based on JESD test methods common to the semiconductor industry. The manufacturing test specifications are used as the PASS/FAIL criteria for initial and final DC/RF tests. VI. Qualification By Similarity A device can be qualified by similarity to previously qualified products provided that no new potential failure modes/mechanisms are possible in the new design. The following products have been qualified by similarity to SZP-3026Z: SZP-2026Z SPB-2026Z SPA-1426Z SPA-1526Z VII. Operational Life Testing Sirenza Microdevices defines operational life testing as a DC biased elevated temperature test performed at the maximum junction temperature limit. For the SZP3026Z the absolute maximum temperature limit is 150oC. The purpose of the life test is to statistically show that the product operated at its maximum recommended ratings will be reliable by operating several devices at absolute maximum for a total time of 1000 hours. The results for this test are expressed in device hours that are calculated by multiplying the total number of devices passing the test by the number of hours tested. VIII. Moisture Sensitivity Level - MSL Level 1 Device Sirenza Microdevices classifies moisture sensitivity levels (MSL) according to the JESD 22-A113 convention. Moisture sensitivity levels are ranked from level 1 (most resistive to moisture) to level 5 (least resistive to moisture). The moisture sensitivity level is determined by a moisture soak test (temperature and humidity) for various temperatures, humidity levels, and times according to the requirements for a particular level, followed by three passes through a convection reflow oven at 270oC. This simulates stress from storage in high humidity environments and immediate assembly. For a device to be classified level 1 (MSL-1), the device must pass manufacturing test specifications following the moisture soak and reflow test. The results of the testing classify SZP-3026Z as MSL-1, the most resistant to humidity, indicating that no special anti-moisture packaging or handling is required. SZP-3026Z Reliability Qualification Report IX. Electrostatic Discharge Classification Sirenza Microdevices classifies Human Body Model (HBM) electrostatic discharge (ESD) according to the JESD22-A114 convention. All pin pair combinations were tested. Each pin pair is stressed at one static voltage level using 1 positive and 1 negative pulse polarity to determine the weakest pin pair combination. The weakest pin pair is tested with 3 devices below and above the failure voltage to classify the part. The Pass/Fail status of a part is determined by the manufacturing test specification. The ESD class quoted indicates that the device passed exposure to a certain voltage, but does not pass the next higher level. The following table indicates the JESD ESD sensitivity classification levels. HBM Class 0 1A 1B 1C 2 Passes 0V 250 V 500 V 1000 V 2000 V Part Number SZP-3026Z SZP-2026Z SPB-2026Z SPA-1526Z Fails <250 V 500 V 1000 V 2000 V 4000 V HBM ESD Rating Class 1C Class 1C Class 1C Class 1C X. Operational Life Test Results The results for SZP-3026Z High Temperature Operating Life Test are as follows: Test Duration Junction Temperature Quantity Device Hours 1000 hours 150°C 40 40,000 SZP-3026Z Reliability Qualification Report XI. Qualification Test Results Group Test Name Test Condition/ Standard Sample Size Results B Preconditioning MSL1 Reflow @ 270oC Peak JESD22-A113C 193 Pass B1a Temperature Cycling Air to Air, Soldered on PCB -65oC to 165oC 10 min dwell, 1 min transition 1000 cycles JESD22-A104B 5 Pass B1b High Temperature Operating Life Tj = 150°C 1000 hours JESD22-A108B 40 B1c HAST Tamb=110°C, 85%RH Biased, 264 hours JESD22-A110B 15 Power Temperature Cycle -40°C to +85°C Cycled bias (5’ on/5’off) 1000 cycles JESD22-A109A 20 Pass Temperature Cycle -65°C to +150°C 10 min dwell, 1 min transition 1000 cycles JESD22-A104B 158 Pass Autoclave Tamb=121°C, 100%RH Un-Biased, 96 hours JESD22-A102C 11 Pass B1d B3 C Pass Pass SZP-3026Z Reliability Qualification Report XI. Qualification Test Results Group Test Name Test Condition/ Standard Dip & Look Sn/Pb solder Steam Age Condition C Dip Condition A, 215°C JESD22-B102C G Results 45 Pass Solderability Dip & Look Sn/Ag/Cu solder Steam Age Condition C Dip Condition B, 245°C JESD22-B102C F Sample Size Tin Whiskering 45 Pass Tamb=60°C, 90%RH 1500 hours 5 Pass Tamb=60°C, 87%RH 3000 hours 6 Pass Temp Cycle -55°C to 85°C 1500 cycles 6 Pass 150°C storage 3000 hours 6 Pass Tamb=30°C, 60%RH 3000 hours 6 Pass SZP-3026Z Reliability Qualification Report XII. Junction Temperature One key issue in performing qualification testing is to accurately determine the junction temperature of the device. Sirenza Microdevices uses a 3um spot size emissivity corrected infrared camera measurement to resolve the surface temperature of the device at the maximum operational power dissipation. The results are displayed below for the SZP-3026Z device running at operational current of 501 mA, a device voltage of 5V, lead temperature of 85.0°C, and RF drive with Pout=26 dBm. Tj = 114 oC Figure 2: Infrared Thermal Image of SZP-3026Z, Vd =5V, Id = 501 mA, Pout=26dBm, Lead Temp = 85.0°C SZP-3026Z Reliability Qualification Report XII. Thermal Resistance Junction temperature measurements determine the thermal resistance (Rth) of the product. Statistically calculated thermal resistances (°C/W) are given in the table below. Part SZP-2026Z SZP-3026Z SPB-2026Z SPA-1426Z SPA-1526Z Rth (C/W) 12 12 12 21 12