OSRAM SPLLL90_3

Hybride Impuls-Laserdiode mit integrierter Treiberstufe 70 W Spitzenleistung
Hybrid Pulsed Laser Diode with Integrated Driver Stage 70 W Peak Power
Lead (Pb) Free Product - RoHS Compliant
SPL LL90_3
Besondere Merkmale
Features
• Kleines kostengünstiges Plastik-Gehäuse
• Integriert sind ein FET und Kondensatoren zur
Impulsansteuerung
• InAlGaAs/GaAs kompressiv verspannte
Quantenfilmstruktur
• Hochleistungslaser mit „Large-Optical-Cavity“
(LOC) Struktur
• Nanostack Lasertechnologie beinhaltet
mehrere epitaktisch integrierte Emitter
• Laserapertur 200 µm x 10 µm
• Schneller Betrieb (< 30 ns Impulsbreite)
• Niedrige Versorgungsspannung (< 20 V)
•
•
•
•
•
Low cost, small size plastic package
Integrated FET and capacitors for pulse control
Strained InAlGaAs/GaAs QW-structures
High power large-optical-cavity laser structure
Nanostack laser technology including multiple
epitaxially stacked emitters
• Laser aperture 200 µm x 10 µm
• High-speed operation (< 30 ns pulse width)
• Low supply voltage (< 20 V)
Applications
•
•
•
•
Anwendungen
•
•
•
•
Entfernungsmessung
Sicherheit, Überwachung
Beleuchtung, Zündung
Test- und Messsysteme
Safety advices
Depending on the mode of operation, these
devices emit highly concentrated non visible
infrared light which can be hazardous to the
human eye. Products which incorporate these
devices have to follow the safety precautions
given in IEC 60825-1 “Safety of laser products”.
Sicherheitshinweise
Je nach Betriebsart emittieren diese Bauteile
hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefährlich für das menschliche
Auge sein kann. Produkte, die diese Bauteile
enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Norm 60825-1 behandelt
werden.
Typ
Range finding
Security, surveillance
Illumination, ignition
Testing and measurement
Wellenlänge
Bestellnummer
Type
Opt. Spitzenausgangsleistung
Number of Emitters Opt. Peak Power
Wavelength
Ordering Code
SPL LL90_3
3
905 nm
Q65110A1009
2007-04-04
Emitteranzahl
70 W
1
SPL LL90_3
Grenzwerte (kurzzeitiger Betrieb) (TA = 25 °C)
Maximum Ratings (short time operation)
Parameter
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
min.
max.
–
80
W
20
V
Spitzenausgangsleistung
Peak output power
Popt
Ladespannung (VG = 15 V)
Charge voltage (VG = 15 V)
VC
Gate-Spannung
Gate voltage
VG
– 20
+ 20
V
Tastverhältnis
Duty cycle
d.c.
–
0.1
%
Betriebstemperatur
Operating temperature
Top
- 40
+ 85
°C
Temperatur des pn-Übergangs1)
Junction temperature1)
Tj
–
+ 105
°C
Lagertemperatur
Storage temperature
Tstg
- 40
+ 100
°C
Löttemperatur (tmax = 10 s)
Soldering temperature (tmax = 10 s)
Ts
–
+ 260
°C
1)
limited due to plastic package, not due to laser chip
2007-04-04
2
SPL LL90_3
Optische Kennwerte (TA = 25 °C)
Optical Characteristics
Parameter
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
min.
typ.
max.
Zentrale Emissionswellenlänge1)
Emission wavelength1)
λ
895
905
915
nm
Spektralbreite (Halbwertsbreite)1)
Spectral width (FWHM)1)
Δλ
–
7
–
nm
Spitzenausgangsleistung1)
Peak output power1)
Popt
60
70
80
W
Ladespannung an der Laserschwelle
Charge Voltage at laser threshold
UC, th
4.0
4.5
5.0
V
Pulsbreite (Halbwertsbreite)1), 2)
Pulse width (FWHM)1), 2)
tp
37
40
43
ns
Anstiegs- und Abfallzeit (10% … 90%)1), 2)
Rise and fall time (10% … 90%)1), 2)
tr ,
tf
7
40
10
45
13
50
ns
ns
Jitter (bzgl. Triggersignal und optischem Puls)
Jitter (regarding trigger signal and optical pulse)
tj
170
500
ps
Austrittsöffnung
Aperture size
w×h
–
200 × 10 –
μm2
Strahldivergenz (Halbwertsbreite) parallel zum
pn-Übergang1)
Beam divergence (FWHM) parallel to pn junction1)
θ||
12
15
18
Grad
deg.
Strahldivergenz (Halbwertsbreite) senkrecht zum
θ⊥
pn-Übergang1)
Beam divergence (FWHM) perpendicular to pn-junction1)
27
30
33
Grad
deg.
Temperaturkoeffizient der Wellenlänge
Temperature coefficient of wavelength
∂λ / ∂T
–
0.30
0.33
nm/K
Thermischer Widerstand
Thermal resistance
Rth
–
200
–
K/W
Einschaltpunkt der Gate-Spannung
Switch on gate voltage
VG on
–
5.0
–
V
1)
2)
Werte beziehen sich auf folgende Standardbetriebsbedingung: >50 ns Pulsbreite, 1 kHz Pulswiederholrate, 18.5 V Ladespannung, 15
V Gate-Spannung und 25°C Umgebungstemperatur. Der Laser wird angesteuert mit dem MOSFET-Treiber Elantec EL7104C.
Values refer to the following standard operating conditions: >50 ns pulse width, 1 kHz pulse repetition rate, 18.5 V charge voltage, 15
V gate voltage and 25 °C ambient temperature. The laser is driven by the MOSFET driver Elantec EL7104C.
Die Schaltgeschwindigkeit ist abhängig von Strom und Geschwindigkeit, mit der die Gate-Kapazität (typ. 300 pF) des internen
Transistors geladen wird. Kürzere Pulsbreiten, Anstiegs- und Abfallzeiten erhält man bei Trigger-Pulsbreiten <50 ns. Dies bewirkt
jedoch auch eine reduzierte optische Spitzenleistung.
Switching speed at gate depends on current and speed, charging the gate capacitance (typ. 300 pF) of the internal transistor. Reduced
pulse widths, rise and fall times occur at trigger pulse widths <50 ns. This also reduces the optical peak power.
2007-04-04
3
SPL LL90_3
Optical output power Popt vs charge voltage Vc
(tp = 30 ns)
OHL01909
90
W
80
Popt
Optical spectrum, relative intensity Irel vs.
wavelength (Popt = 70 W, tp = 30 ns) λ
OHL01910
100
1 kHz
I rel
70
75
25 kHz
60
50
50
40
30
25
20
10
0
0
5
10
15
0
860
20 V 25
900
920 nm 940
λ
VC
Far-field distribution parallel to junction
Irel vs. angle θ|| (Popt = 70 W, tp = 30 ns)
1.00
880
Far-field distribution perpendicular to
junction Irel vs. angle θ⊥ (Popt = 70 W, tp = 30 ns)
OHL01906
1.00
OHL01907
I rel
I rel
0.75
0.75
0.50
0.50
0.25
0.25
0
-40 -30 -20 -10 0
0
-40 -30 -20 -10 0
10 20 Deg 40
θ
θ
2007-04-04
10 20 Deg 40
4
SPL LL90_3
Optical output power Popt vs charge voltage Vc
(tp = 30 ns, PRF = 1 kHz) at different ambient
temperature Tamb
TA =
-40 ˚C
-20 ˚C
0 ˚C
20 ˚C
40 ˚C
60 ˚C
80 ˚C
100 ˚C
70
60
50
VC max
16
14
12
8
30
6
20
4
10
2
0
5
10
15
0
-40 -20 0
20 V 25
VC
OHL01905
80
W
70
Popt
60
40
1 kHz
10 kHz
20 kHz
30 kHz
40 kHz
30
20
10
0
-40 -20 0
20 40 60 80
˚C 120
TA
2007-04-04
20 40 60 80
˚C 120
TA
Peak output power at maximum charge voltage
Vc, max vs. ambient temperature Tamb at
various rep rates (tp = 30 ns)
50
10 kHz
20 kHz
30 kHz
40 kHz
10
40
0
OHL01904
20
V
18
OHL01908
90
W
80
Popt
Maximum allowed charge voltage Vc , max vs.
ambient temperature Tamb at various rep rates
(tp=30 ns, Vc<=19 V, chip temperature<=105 °C)
5
SPL LL90_3
Maßzeichnung
Package Outlines
2.4 (0.094) ±0.2 (0.008)
4.9 (0.193) ±0.2 (0.008)
+0.4 (0.016)
0.3 (0.012) -0.25 (0.010)
1.35 (0.053) ±0.2 (0.008)
(12.2 (0.480))
Laser Diode
5 (0.197) ±0.2 (0.008)
0 (0.000) ±0.1 (0.004)
1
2
3
8.6 (0.339) ±0.4 (0.016)
R0.3 (0.012)
(2.35 (0.093))
1.05 (0.041) ±0.3 (0.012)
2.5 (0.098) ±0.2 (0.008)
Surface
not flat
0 (0.000) ±0.1 (0.004)
0 (0.000) ±0.1 (0.004)
2
1.8 (0.071)
1.2 (0.047)
25.2 (0.992)
24.2 (0.953)
0 (0.000) ±0.1 (0.004)
1
VC
FET
Trigger
G
VG
D
S
C
Laser diode
0.5 (0.020) ±0.1 (0.004)
0.6 (0.024)
spacing 2.54 (0.100)
0.4 (0.016)
3 GND
GWOY6124
R0.25 (0.010)
Maße in mm (inch) / Dimensions in mm (inch).
2007-04-04
6
C
SPL LL90_3
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2007-04-04
7