IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4056 Wesentliche Merkmale Features • Sehr kleines Gehäuse: (LxBxH) 3.2 mm x 1.6mm x 1 mm • Sehr hohe Gesamtleistung • Very small package: (LxWxH) 3.2 mm x 1.6 mm x 1 mm • High optical total power Anwendungen Applications • • • • • • • • Miniaturlichtschranken Mobile Geräte Näherungssensor „Messen/Steuern/Regeln“ Miniature photointerrupters Mobile devices proximity sensor For drive and control circuits Sicherheitshinweise Safety Advices Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Typ Type Bestellnummer Ordering Code Strahlstärkegruppierung1) (IF = 70 mA, tp = 20 ms) Radiant Intensity Grouping1) Ie (mW/sr) SFH 4056 Q65110A9942 ≥ 16 (typ. 35) 1) gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr 2010-11-09 1 SFH 4056 Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top , Tstg – 40 … + 85 °C Sperrspannung Reverse voltage VR 5 V Vorwärtsgleichstrom Forward current IF 70 mA Stoßstrom, tp = 10 μs, D = 0 Surge current IFSM 700 mA Verlustleistung Power dissipation Ptot 140 mW 540 K/W 360 K/W ESD 2 kV Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength at peak emission IF = 70 mA, tp = 10 ms λpeak 860 nm Schwerpunkts-Wellenlänge der Strahlung Centroid Wavelength IF = 70 mA, tp = 10 ms λcentroid 850 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 70 mA, tp = 10 ms Δλ 42 nm Abstrahlwinkel Half angle ϕ ± 22 Grad deg. Wärmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgröße je 5 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 5 mm2 each Wärmewiderstand Sperrschicht - Lötstelle bei RthJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Elektrostatische Entladung (HBM) Electrostatic discharge (HBM) Kennwerte (TA = 25 °C) Characteristics 2010-11-09 2 SFH 4056 Kennwerte (TA = 25 °C) Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Aktive Chipfläche Active chip area A 0.04 mm2 Abmessungen der aktiven Chipfläche Dimension of the active chip area L×B L×W 0.2 × 0.2 mm² Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 70 mA, RL = 50 Ω Switching times, Ιe from 10% to 90% and from 90% to 10%, IF = 70 mA, RL = 50 Ω tr , tf 12 ns Durchlassspannung Forward voltage IF = 70 mA, tp = 20 ms VF 1.6 (< 2.0) Sperrstrom Reverse current IR not designed for μA reverse operation Gesamtstrahlungsfluss Total radiant flux IF = 70 mA, tp = 20 ms Φe typ 40 mW Temperaturkoeffizient von Ie bzw. Φe, IF = 70 mA Temperature coefficient of Ie or Φe, IF = 70 mA TCI – 0.5 %/K Temperaturkoeffizient von VF, IF = 70 mA Temperature coefficient of VF, IF = 70 mA TCV – 0.7 mV/K Temperaturkoeffizient von λ, IF = 70 mA Temperature coefficient of λ, IF = 70 mA TCλ + 0.3 nm/K 2010-11-09 V 3 SFH 4056 Strahlstärke Ie in Achsrichtung1) gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.01 sr Bezeichnung Parameter Symbol Werte Values Einheit Unit SFH 4056 -S -T -U Strahlstärke Radiant intensity IF = 70 mA, tp = 20 ms Ie min Ie max 16 32 25 50 40 80 mW/sr mW/sr Strahlstärke Radiant intensity IF = 500 mA, tp = 25 µs Ie typ 90 140 225 mW/sr 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one bin in one packing unit (variation lower 2:1) Abstrahlcharakteristik Radiation Characteristics Irel = f (ϕ) 40˚ 30˚ 20˚ 10˚ ϕ 0˚ OHF04383 1.0 50˚ 0.8 60˚ 0.6 70˚ 0.4 80˚ 0.2 0 90˚ 100˚ 2010-11-09 1.0 0.8 0.6 0.4 0˚ 4 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ SFH 4056 Relative Spectral Emission Irel = f (λ) Ie = f (IF) Radiant Intensity Ie 70 mA Single pulse, tp = 25 μs OHF04135 100 I rel % OHF04406 101 Ie I e (70 mA) 80 Max. Permissible Forward Current IF = f (TA), RthJA = 540 K/W IF 100 OHF04264 80 mA 70 60 5 50 60 10-1 40 5 40 30 10-2 20 20 5 10 0 700 750 800 nm 950 850 10-3 0 10 5 10 1 5 10 2 mA λ Forward Current IF = f (VF) Single pulse, tp = 100 μs IF 10-1 0.8 IF A 0.7 t 0.3 10-3 IF T 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.5 1 5 0.8 IF A 0.7 0.2 0.5 0.4 0.3 0.2 5 0.1 0.1 0.5 1 1.5 2 2.5 V 3 VF 2010-11-09 60 80 ˚C 100 OHF04266 t D = TP tP IF T D= 0.4 0 40 0.6 0.6 -2 tP D = TP 0.5 10-4 20 Permissible Pulse Handling Capability IF = f (τ), TA = 85 °C, duty cycle D = parameter OHF04265 5 10 0 TA Permissible Pulse Handling Capability IF = f (τ), TA = 25 °C, duty cycle D = parameter OHF03826 100 A 0 10 3 IF 0 -5 10 10-4 10-3 10-2 10-1 100 101 s 102 tp 5 D= 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.5 1 0 -5 10 10-4 10-3 10-2 10-1 100 101 s 102 tp SFH 4056 Maßzeichnung Package Outlines Maße in mm/ Dimensions in mm. Gehäuse / Package Chip LED/ Chip LED Farbe / Colour Schwarz / black Gehäusemarkierung/ Package marking Pad 1: Kathode / cathode Pad 2: Anode / anode (anode marking) Gewicht/ Approx. weight 5.3mg 2010-11-09 6 SFH 4056 Gurtung / Polarität und Lage Verpackungseinheit 2000/Rolle, ø180 mm Method of Taping / Polarity and Orientation Packing unit 2000/reel, ø180 mm Maße in mm (inch) / Dimensions in mm (inch). Empfohlenes Lötpaddesign Recommended Solder Pad Reflow Löten Reflow Soldering Maße in mm / Dimensions in mm. 2010-11-09 7 SFH 4056 Lötbedingungen Soldering Conditions Reflow Lötprofil für bleifreies Löten Reflow Soldering Profile for lead free soldering Vorbehandlung nach JEDEC Level 3 Preconditioning acc. to JEDEC Level 3 (nach J-STD-020-D.01) (acc. to J-STD-020-D.01) OHA04525 300 ˚C T 250 Tp 245 ˚C 240 ˚C tP 217 ˚C 200 tL 150 tS 100 50 25 ˚C 0 0 50 100 150 200 250 s 300 t Pb-Free (SnAgCu) Assembly Profile Feature Recommendation Max. Ratings Ramp-up Rate to Preheat* 25°C to 150°C 2°C / sec 3°C / sec Time ts from TSmin to TSmax (150°C to 200°C 100s min. 60sec max. 120sec Ramp-up Rate to Peak*) TSmax to TP 2°C / sec 3°C / sec ) Liquidus Temperture TL 217°C Time tL above TL 80sec max. 100sec Peak Temperature TP 245°C max. 260°C Time tP within 5°C of the specified peak temperature TP - 5K 20sec min. 10sec max. 30sec Ramp-down Rate* TP to 100°C 3°C / sec 6°C / sec maximum Time 25°C to Peak temperature max. 8 min. All temperatures refer to the center of the package, measured on the top of the component * slope calculation ΔT/Δt: Δt max. 5 sec; fulfillment for the whole T-range 2010-11-09 8 SFH 4056 Published by OSRAM Opto Semiconductors GmbH Leibnizstrasse 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2010-11-09 9 Mouser Electronics Related Product Links 720-SFH4056Z - Osram Opto Semiconductor SFH 4056-Z