SEMIKRON SK10GD065ET

SK10GD065ET
# , -. /0 Absolute Maximum Ratings
Symbol Conditions
IGBT
123
#4 , -. /
%
#4 , 8-. /
%;<
677
1
89
'
# , :7 /
88
'
-7
'
= -7
1
#4 , 8-. /
87
B
# , -. /
--
'
# , :7 /
8.
'
>7
'
%;<, - %
IGBT Module
SK10GD065ET
1 , >77 1? 1&2 @ -7 1?
123 A 677 1
Units
# , -. /
1&23
SEMITOP® 3
Values
Inverse Diode
%)
#4 , 8.7 /
%);<
%);<, - %)
Module
%;<3
Preliminary Data
#+4
CD7 EEE F8.7
/
#
CD7 EEE F8-.
/
-.77
1
1
Features
!"# $ %&#
'( $ )*
% !# Typical Applications
%+
'
'0 8 E
# , -. /0 Characteristics
Symbol Conditions
IGBT
1&2
1&2 , 120 % , 70> '
%23
1&2 , 7 10 12 , 123
%&23
12 , 7 10 1&2 , -7 1
min.
typ.
>
D
#4 , -. /
max.
.
1
70777:
'
#4 , 8-. /
'
#4 , -. /
877
#4 , 8-. /
127
2
12
1&2 , 8. 1
% , 87 '0 1&2 , 8. 1
12 , -.0 1&2 , 7 1
;& , -87 H
;& , -87 H
2
;4C
%&#
'
'
#4 , -. /
80-
80>
#4 , 8-. /
808
70G
1
#4 , -./
8>>
-77
H
#4 , 8-./
8:>
1
H
#4 , -./
+E
-
#4 , 8-./
+E
-0-
1
, 8 <I
70.:
7079
)
)
707.
)
D.
>7
708:
>D7
-.
J
708>
J
2
Units
1 , >771
%, 6'
#4 , 8-. /
1&2,=8.1
-0.
-
1
KL*
GD-ET
1
08-03-2007 SCT
© by SEMIKRON
SK10GD065ET
Characteristics
Symbol Conditions
Inverse Diode
1) , 12
%) , 6 '? 1&2 , 7 1
1)7
)
®
SEMITOP 3
IGBT Module
SK10GD065ET
%;;<
M
%) , 6 '
L , C897 'LB
2
1, >771
;4C
<
N
min.
typ.
max.
Units
#4 , -. /
+E
80>
80.
1
#4 , 8-. /
+E
80-
1
#4 , -. /
8
#4 , 8-. /
70G
#4 , -. /
D.
#4 , 8-. /
.7
H
#4 , 8-. /
:0D
70:
'
B
708:
J
-0-.
808
1
1
67
H
-0>
KL*
-0.
!
>7
DG>=.O
H
Temperature sensor
;877
# ,877/ ;-.,.NH
Preliminary Data
Features
!"# $ %&#
'( $ )*
% !# This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Typical Applications
%+
GD-ET
2
08-03-2007 SCT
© by SEMIKRON
SK10GD065ET
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
08-03-2007 SCT
© by SEMIKRON
SK10GD065ET
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
08-03-2007 SCT
© by SEMIKRON
SK10GD065ET
UL recognized file
no. E 63 532
#.- 3 0 "0 P -
# .-
5
&C2#
08-03-2007 SCT
© by SEMIKRON