SK10GD065ET # , -. /0 Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 8-. / %;< 677 1 89 ' # , :7 / 88 ' -7 ' = -7 1 #4 , 8-. / 87 B # , -. / -- ' # , :7 / 8. ' >7 ' %;<, - % IGBT Module SK10GD065ET 1 , >77 1? 1&2 @ -7 1? 123 A 677 1 Units # , -. / 1&23 SEMITOP® 3 Values Inverse Diode %) #4 , 8.7 / %);< %);<, - %) Module %;<3 Preliminary Data #+4 CD7 EEE F8.7 / # CD7 EEE F8-. / -.77 1 1 Features !"# $ %&# '( $ )* % !# Typical Applications %+ ' '0 8 E # , -. /0 Characteristics Symbol Conditions IGBT 1&2 1&2 , 120 % , 70> ' %23 1&2 , 7 10 12 , 123 %&23 12 , 7 10 1&2 , -7 1 min. typ. > D #4 , -. / max. . 1 70777: ' #4 , 8-. / ' #4 , -. / 877 #4 , 8-. / 127 2 12 1&2 , 8. 1 % , 87 '0 1&2 , 8. 1 12 , -.0 1&2 , 7 1 ;& , -87 H ;& , -87 H 2 ;4C %&# ' ' #4 , -. / 80- 80> #4 , 8-. / 808 70G 1 #4 , -./ 8>> -77 H #4 , 8-./ 8:> 1 H #4 , -./ +E - #4 , 8-./ +E -0- 1 , 8 <I 70.: 7079 ) ) 707. ) D. >7 708: >D7 -. J 708> J 2 Units 1 , >771 %, 6' #4 , 8-. / 1&2,=8.1 -0. - 1 KL* GD-ET 1 08-03-2007 SCT © by SEMIKRON SK10GD065ET Characteristics Symbol Conditions Inverse Diode 1) , 12 %) , 6 '? 1&2 , 7 1 1)7 ) ® SEMITOP 3 IGBT Module SK10GD065ET %;;< M %) , 6 ' L , C897 'LB 2 1, >771 ;4C < N min. typ. max. Units #4 , -. / +E 80> 80. 1 #4 , 8-. / +E 80- 1 #4 , -. / 8 #4 , 8-. / 70G #4 , -. / D. #4 , 8-. / .7 H #4 , 8-. / :0D 70: ' B 708: J -0-. 808 1 1 67 H -0> KL* -0. ! >7 DG>=.O H Temperature sensor ;877 # ,877/ ;-.,.NH Preliminary Data Features !"# $ %&# '( $ )* % !# This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications %+ GD-ET 2 08-03-2007 SCT © by SEMIKRON SK10GD065ET Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 08-03-2007 SCT © by SEMIKRON SK10GD065ET Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 08-03-2007 SCT © by SEMIKRON SK10GD065ET UL recognized file no. E 63 532 #.- 3 0 "0 P - # .- 5 &C2# 08-03-2007 SCT © by SEMIKRON