SK25GAD063T $ 3 10 4! Absolute Maximum Ratings Symbol Conditions IGBT 5-" $6 3 10 4 & $6 3 910 4 &<= IGBT Module SK25GAD063T .88 5 /8 : $ 3 ;8 4 19 : .8 : > 18 5 98 B &<=3 1 & &C &C<= ! " #$% &'$ ( ) *) +! , -./ 0/1 & #$ Typical Applications " &2 " *#" $6 3 910 4 $6 3 908 4 $ 3 10 4 : $ 3 ;8 4 : &C<=3 1 &C : Freewheeling Diode $6 3 908 4 $ 3 10 4 /. : $ 3 ;8 4 1D : &C<= &C"= Features 5-" A .88 5 Inverse Diode &C Preliminary Data 5 3 /88 5? 5'- @ 18 5? Units $ 3 10 4 5'-" SEMITOP® 3 Values : 3 98 ? 2 $6 3 908 4 188 : Module &<=" : $26 %D8 ,,, E908 4 $ %D8 ,,, E910 4 1088 5 5 :! 9 , $ 3 10 4! Characteristics Symbol Conditions IGBT 5'- 5'- 3 5-! & 3 8!F : &-" 5'- 3 8 5! 5- 3 5-" min. typ. max. D!0 0!0 .!0 5 8!9 : $6 3 10 4 $6 3 910 4 &'-" 5- 3 8 5! 5'- 3 /8 5 : $6 3 10 4 918 $6 3 910 4 5-8 5- 5'- 3 90 5 & 3 /8 :! 5'- 3 90 5 Units : : $6 3 10 4 9!1 5 $6 3 910 4 8!; 5 $6 3 104 /8 G $6 3 9104 DF $6 3 104 2, 1!9 $6 3 9104 2, G 1!0 5 1!1 5 9!/0 C C 8!91 C - D8 08 9!/ 188 10 H 8!I H 5- 3 10! 5'- 3 8 5 <' 3 // G <' 3 // G - <6% &'$ 3 9 =+ 5 3 /885 &3 10: $6 3 910 4 5'-3>905 9!D JKL GAD 1 13-02-2007 DIL © by SEMIKRON SK25GAD063T Characteristics Symbol Conditions 5C 3 5- &C 3 98 :? 5'- 3 8 5 5C8 C ® SEMITOP 3 IGBT Module &<<= M &C 3 98 : K 3 188 :KB - 53 /885 <6% Preliminary Data Features ! " #$% &'$ ( ) *) +! , -./ 0/1 & #$ Typical Applications " &2 " *#" min. max. Units 9!D0 9!F 5 $6 3 910 4 2, 9!D 9!F 5 $6 3 910 4 8!;0 8!I 5 $6 3 910 4 00 ;8 G $6 3 910 4 .!0 9 : B 8!9 H 1!/ JKL Freewheeling Diode 5C 3 5- &C 3 10 :? 5'- 3 8 5 5C8 SK25GAD063T typ. $6 3 10 4 2, $6 3 10 4 2, 9!D0 9!F 5 $6 3 910 4 2, 9!D 9!F0 5 8!;0 8!I $6 3 910 4 11 /1 $6 3 910 4 9. 1 : B 8!10 H $6 3 10 4 5 $6 3 910 4 C $6 3 10 4 &<<= M &C 3 10 : K 3 %088 :KB - 5<3/885 <6%C = N =9 5 5 1!10 5 9!F JKL 1!0 /8 9888 9.F8 G Temperature sensor < /O! $ 3 10 9884 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GAD 2 13-02-2007 DIL © by SEMIKRON SK25GAD063T Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 13-02-2007 DIL © by SEMIKRON SK25GAD063T Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 13-02-2007 DIL © by SEMIKRON SK25GAD063T UL recognized file no. E 63 532 $0F " ! #! P 1 $ 0F 5 ': 13-02-2007 DIL © by SEMIKRON