1,310nm DFB CATV Laser FLD3F7CZ FEATURES • • • • • Direct Modulation DFB Laser Built-in TEC, Thermistor and Monitor PD Optical Isolator 14 Pin Butterfly Type Module 78 Channel NTSC Loading (112 Channel device available) • Low Residual CSO & CTB • 11 dB Link Budget Available APPLICATIONS This DFB laser is intended for application in analog AM, CATV at 1,310nm. Transmission spans of 30 km are possible without amplification. DESCRIPTION This DFB laser for analog AM application is a high power laser capable of carrying 78 channels with excellent CSO, CTB, and CNR performance. It is packaged in a ‘butterfly’ type module. The module employs a high efficiency optical coupling system, coupling the laser output through a built-in optical isolator into a single mode fiber pigtail. The module also includes a monitor photodiode, a thermoelectric cooler (TEC) and a thermistor. ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise specified) Parameter Symbol Ratings Condition Unit Min. Max. Storage Temperature Tstg - -40 +70 °C Operating Case Temperature Top - -20 +65 °C Optical Output Power Pf CW - 20 mW LD Forward Current IF CW - 150 mA LD Reverse Voltage VR - - 2 V PD Reverse Voltage VDR - - 20 V PD Forward Current IPD - - 10 mA TEC Voltage Vc Cooling Heating +2.5 - V TEC Current Ic Cooling Heating -2.0 -0.5 +1.4 - A Tth ATC Operation -20 +65 °C Tsold 260°C - 10 sec Xop Top<30°C - 95 % Xst Tstg<30°C - 95 % Thermistor Temperature Lead Soldering Time Environmental Operating Humidity Environmental Storage Humidity Edition 1.2 July 2004 1 1,310nm DFB CATV Laser FLD3F7CZ TEC & THERMISTOR CHARACTERISTICS (TL=25±1°C) Limits Symbol Test Conditions Min. Max. Unit TEC Current Ic ∆T=40°C - 1.0 A TEC Voltage Vc ∆T=40°C - 2.0 V TEC Capacity ∆T Ic=1A 40 - °C Thermistor Resistance Rtr - 9.5 10.5 kΩ Thermistor B Constant B - Parameter Typ. 3,900 K Tc = Case Temperature, TL = Laser Temperature OPTICAL AND ELECTRICAL CHARACTERISTICS (TL=25±1°C) Parameter Symbol Test Conditions Threshold Current Ith Forward Voltage (pin 3-13) Limits Unit Min. Max. CW - 20 mA VF CW, IF=30mA - 1.5 V Optical Output Power Pf CW 8 20 mW Slope Efficiency S CW, IF=Iop 0.20 - mW/mA Tracking Error TE Note (1) -0.5 +0.5 dB Monitor Current Im CW, IF=Iop, VDR=5V 30 900 µA Photodiode Dark Current Id VDR=5V - 100 nA Photodiode Capacitance Ct VDR=5V, f=1MHz - 12 pF Peak Wavelength λp CW, IF=Iop 1,290 1,330 nm SSR CW, IF=Iop 25 - dB Bandwidth (-1dB) fc Note (2) 1.5 - GHz Isolation Is Tc=0 to 65°C 25 - dB Relative Intensity Noise RIN Note (3) - -155 dB/Hz Composite Second Power Composite Triple Beat Carrier to Noise Ratio CSO CTB CNR Note (4) 50 -57 -65 - dBc dBc dB SideMode Suppression Ratio (1) (2) (3) (4) Total change in Pf over -20<Tc<+65°C, Test conditions: Pf=8mW at TL=Tc=25°C. Constant current operation with TEC operating. Test condition: Pf=8mW, No matching network is used in the measurement. Test condition: Pf; same power of Note 4, measuring bandwidth: 45-600MHz, Optical reflection=-40dB (no long-haul fiber is used in the measurement.) Test condition: Pf=8mW (minimum), Optical Modulation, Index=3.2%/channel (minimum), 78 unmodulated carriers (55.25 to 547.25 MHz; ch. 2 to 78 plus A-1), Optical link loss=11dB (30 km singlemode fiber), Noise equivalent current of 1st stage of the receiver=7pA/ Hz, Receiver responsivity=0.86A/W, Optical reflection=-40dB (excluding reflection from long-haul fiber). 2 1,310nm DFB CATV Laser FLD3F7CZ Fig. 2 Forward Current vs. Forward Voltage Fig. 1 Optical Output Power and Monitor Current vs. Laser Forward Current 25 1.0 100 TL=25°C Pf 0.8 Im 15 0.6 10 0.4 5 0.2 0 0 20 40 60 40 20 0 100 60 Pin 3-13 80 Forward Current, IF(mA) 20 Monitor Current, Im(mA) Optical Output Power, Pf(mW) TL=25°C 0 0.5 1.0 1.5 2.0 2.5 Forward Voltage, VF (V) Forward Current, IF(mA) Fig. 4 Lasing Spectrum 10 IF = Iop TL = 25°C 50 Relative Intensity (dB) Threshold Current, Ith(mA) Fig. 3 Temperature Dependence of Threshold Current 20 10 5 0 -20 -40 -60 -40 -20 0 20 40 60 1300 80 Laser Temperature, TL (°C) 1310 Wavelength (nm) 3 1320 1,310nm DFB CATV Laser FLD3F7CZ Fig. 6 Frequency Response 6 Relative Response (dB) 0.5 TL = 25°C 0.4 I = I F op 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 -20 0 20 40 60 80 3 0 -3 0 1.0 2.0 Case Temperature, Tc (°C) Frequency (GHz) Fig. 7 RIN Characteristics Fig. 8 Thermistor Resistance vs. Temperature Thermistor Resistance, Rtr (KΩ) -110 Pf = 3mW, CW BR<-40dB TL=25°C -120 RIN (dB/Hz) Tracking Error (dB) Fig. 5 Tracking Characteristics -130 -140 -150 -160 200 100 50 20 10 5 2 1 -40 -170 0 1 -20 0 20 40 Temperature (°C) 2 Frequency (GHz) 4 60 80 1,310nm DFB CATV Laser FLD3F7CZ Fig. 10 CSO vs. Output Power 3.0 2.0 2.0 VC 1.0 1.0 IC 0.0 0.0 -1.0 0 10 20 30 40 50 60 70 -40 NTSC-78ch. (55.25-547.25MHz) m=3.5%/ch. 30km SMF (11dB Link) -50 CSO (dBc) 3.0 Cooler Current, Ic (A) 548.5MHz -60 54MHz 194.5MHz -70 -1.0 80 -80 Case Temperature, Tc (°C) 5 6 7 8 9 10 11 12 13 14 15 Optical Output Power, Pf (mW) Fig. 12 CNR vs. Output Power Fig. 11 CTB vs. Output Power 60 -40 -50 CTB (dBc) NTSC-78ch. (55.25-547.25MHz) m=3.5%/ch. 30km SMF (11dB Link) NTSC-78ch. (55.25-547.25MHz) m=3.5%/ch. 30km SMF (11dB Link) CNR (dB) Cooler Voltage, Vc (V) Fig. 9 Cooler voltage and Cooler Current vs. Case Temperature -60 55 & 547 MHz 55 MHz 50 313 MHz -70 -80 313 & 547 MHz 40 5 5 6 7 8 9 10 11 12 13 14 15 Optical Output Power, Pf (mW) 6 7 8 9 10 11 12 13 14 15 Optical Output Power, Pf (mW) 5 1,310nm DFB CATV Laser FLD3F7CZ “CZ” PACKAGE 17.24±0.20 15.24±0.25 5 4 3 2 1 10 11 12 13 14 TEC 5.08±0.15 ø0.9±0.1 ø5.2±0.2 8.89±0.15 12.7±0.25 15.2±0.3 14-0.1±0.05 PIN 1 5.08±0.15 8.25±0.50 PIN 8 6 5.41±0.25 2.54±0.20 5.4±0.5 14-0.5±0.1 8.25±0.50 PIN 7 UNIT: mm TOP VIEW 7 8 4-ø2.67±0.20 20.83±0.25 26.04±0.25 9 10.2±0.2 PIN 14 29.97±0.25 0.4±0.15 4.15±0.20 5.8±0.2 *L 25.0±0.5 # PIN DESIGNATIONS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Thermistor Thermistor LD Cathode Power Monitor Anode Power Monitor Cathode Thermoelectric Cooler (+) Thermoelectric Cooler (-) Case Ground Case Ground NC Case Ground LD Modulation (-) Case Ground NC Case Ground: LD Anode CONNECTOR * Pigtail length (L) and connector type are specified in the detail (individual) specification. For further information please contact: CAUTION Eudyna Devices USA Inc. Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 6