ETC FLD3F7CZ

1,310nm MQW-DFB
CATV Laser
FLD3F7CZ
FEATURES
•
•
•
•
BENEFITS
Direct Modulation MQW DFB Laser
• 78 Channel NTSC Loading
Built-in TEC, Thermistor and Monitor PD
(112 Channel device available)
Optical Isolator
• Low Residual CSO & CTB
14 Pin Butterfly Type Module
• 11 dB Link Budget Available
APPLICATIONS
This MQW DFB laser is intended for application in analog AM,
CATV at 1,310nm. Transmission spans of 30 km are possible
without amplification.
DESCRIPTION
This MQW (Multiple Quantum Well) DFB laser for analog AM application is a high power laser capable of carrying 78 channels with excellent CSO, CTB, and CNR performance. It is packaged in a ‘butterfly’ type module. The module employs a high efficiency optical coupling system, coupling the laser
output through a built-in optical isolator into a single mode fiber pigtail. The module also includes a
monitor photodiode, a thermoelectric cooler (TEC) and a thermistor.
ABSOLUTE MAXIMUM RATINGS (Tc=25°C)
Symbol
Ratings
Unit
Storage Temperature
Tstg
-40 to +70
°C
Operating Case Temperature
Top
-20 to +65
°C
Optical Output Power
Pf
20
mW
Laser Forward Current
IF
150
mA
Laser Reverse Voltage
VR
2
V
VDR
20
V
TEC Voltage
Vc
2.5
V
TEC Current
Ic
1.4
A
Parameter
Photodiode Reverse Voltage
Edition 1.1
February 2000
1
This Material Copyrighted by Its Respective Manufacturer
1,310nm MQW-DFB
CATV Laser
FLD3F7CZ
TEC & THERMISTOR CHARACTERISTICS (TL=25±1°C)
Limits
Symbol
Min.
Max.
Unit
Conditions
TEC Current
Ic
-
1.0
A
∆T=40°C
TEC Voltage
Vc
-
2.0
V
∆T=40°C
TEC Capacity
∆T
40
-
°C
Ic=1A
Thermistor Resistance
Rtr
9.5
10.5
kΩ
-
Thermistor B Constant
B
K
-
Parameter
Typ. 3,900
Tc = Case Temperature, TL = Laser Temperature
OPTICAL AND ELECTRICAL CHARACTERISTICS (TL=25±1°C)
Parameter
Symbol
Limits
Min.
Max.
Unit
Conditions
Threshold Current
Ith
-
20
mA
CW
Forward Voltage (pin 3-13)
VF
-
1.5
V
CW, IF=30mA
Optical Output Power
Pf
8
20
mW
CW
Slope Efficiency
S
0.20
-
mW/mA
CW, IF=Iop
Tracking Error
TE
-0.5
+0.5
dB
Note (1)
Monitor Current
Im
120
1200
µA
CW, IF=Iop, VDR=5V
Photodiode Dark Current
Id
-
100
nA
VDR=5V
Photodiode Capacitance
Ct
-
12
pF
VDR=5V, f=1MHz
Peak Wavelength
λp
1,290
1,330
nm
CW, IF=Iop
SSR
25
-
dB
CW, IF=Iop
Bandwidth (-1dB)
fc
1.5
-
GHz
Note (2)
Isolation
Is
25
-
dB
Tc=0 to 65°C
Relative Intensity Noise
RIN
-
-155
dB/Hz
Note (3)
Composite Second Power
Composite Triple Beat
Carrier to Noise Ratio
CSO
CTB
CNR
50
-57
-65
-
dBc
dBc
dB
Note (4)
SideMode Suppression Ratio
(1)
(2)
(3)
(4)
Total change in Pf over -20<Tc<+65°C, Test conditions: Pf=8mW at TL=Tc=25°C. Constant current operation with TEC operating.
Test condition: Pf=8mW, No matching network is used in the measurement.
Test condition: Pf; same power of Note 4, measuring bandwidth: 45-600MHz, Optical reflection=-40dB (no long-haul fiber is used in the measurement.)
Test condition: Pf=8mW (minimum), Optical Modulation, Index=3.2% channel (minimum), 78 unmodulated carriers (55.25 to 547.25 MHz;
ch. 2 to 78 plus A-1), Optical link loss=11dB (30 km singlemode fiber), Noise equivalent current of 1st stage of the receiver=7pA/ Hz,
Receiver responsivity=0.86A/W, Optical reflection=-40dB (excluding reflection from long-haul fiber).
2
This Material Copyrighted by Its Respective Manufacturer
Edition 1.1
February 2000
1,310nm MQW-DFB
CATV Laser
FLD3F7CZ
Fig. 2 Forward Current vs.
Forward Voltage
Fig. 1 Optical Output Power and Monitor Current
vs. Laser Forward Current
25
1.0
100
TL=25°C
Pf
0.8
Im
15
0.6
10
0.4
5
0.2
0
0
20
40
60
40
20
0
100
60
Pin 3-13
80
Forward Current, IF(mA)
20
Monitor Current, Im(mA)
Optical Output Power, Pf(mW)
TL=25°C
0
0.5
1.0
1.5
2.0
2.5
Forward Voltage, VF (V)
Forward Current, IF(mA)
Fig. 4 Lasing Spectrum
10
IF = Iop
TL = 25°C
50
Relative Intensity (dB)
Threshold Current, Ith(mA)
Fig. 3 Temperature Dependence of
Threshold Current
20
10
5
0
-20
-40
-60
-40
-20
0
20
40
60
1300
80
Laser Temperature, TL (°C)
Edition 1.1
February 2000
This Material Copyrighted by Its Respective Manufacturer
1310
Wavelength (nm)
3
1320
1,310nm MQW-DFB
CATV Laser
FLD3F7CZ
0.5
TL = 25°C
0.4 I = I
F op
0.3
0.2
0.1
0
-0.1
-0.2
-0.3
-0.4
-0.5
-20
0
20
6
40
60
80
3
0
-3
0
1.0
2.0
Case Temperature, Tc (°C)
Frequency (GHz)
Fig. 7 RIN Characteristics
Fig. 8 Thermistor Resistance vs. Temperature
Thermistor Resistance, Rtr (KΩ)
-110
Pf = 3mW, CW
BR<-40dB
TL=25°C
-120
RIN (dB/Hz)
Fig. 6 Frequency Response
Relative Response (dB)
Tracking Error (dB)
Fig. 5 Tracking Characteristics
-130
-140
-150
-160
200
100
50
20
10
5
2
1
-40
-170
0
1
-20
0
20
40
60
80
Temperature (°C)
2
Frequency (GHz)
4
This Material Copyrighted by Its Respective Manufacturer
Edition 1.1
February 2000
1,310nm MQW-DFB
CATV Laser
FLD3F7CZ
Fig. 10 CSO vs. Output Power
3.0
2.0
2.0
VC
1.0
1.0
IC
0.0
0.0
-1.0
0
10
20
30
40
50
60
70
-40
NTSC-78ch. (55.25-547.25MHz)
m=3.5%/ch.
30km SMF (11dB Link)
-50
CSO (dBc)
3.0
Cooler Current, Ic (A)
Cooler Voltage, Vc (V)
Fig. 9 Cooler voltage and Cooler Current
vs. Case Temperature
548.5MHz
-60
54MHz
194.5MHz
-70
-1.0
80
-80
Case Temperature, Tc (°C)
5
6
7
8
9
10 11 12 13 14 15
Optical Output Power, Pf (mW)
Fig. 12 CNR vs. Output Power
Fig. 11 CTB vs. Output Power
60
-40
CNR (dB)
-50
CTB (dBc)
NTSC-78ch. (55.25-547.25MHz)
m=3.5%/ch.
30km SMF (11dB Link)
NTSC-78ch. (55.25-547.25MHz)
m=3.5%/ch.
30km SMF (11dB Link)
-60
55 & 547 MHz
55 MHz
50
313 MHz
-70
-80
313 & 547 MHz
40
5
5
6 7 8 9 10 11 12 13 14 15
Optical Output Power, Pf (mW)
Edition 1.1
February 2000
This Material Copyrighted by Its Respective Manufacturer
6
7
8
9 10 11 12 13 14 15
Optical Output Power, Pf (mW)
5
1,310nm MQW-DFB
CATV Laser
FLD3F7CZ
“CZ” PACKAGE
UNIT: mm
17.24
15.24
5.41
TOP VIEW
14-0.1
PIN 1
7
6
5
4
3
2
1
10
11 12 13
14
5.08
TEC
5.25
5.08
ø0.9
ø5.2
8.25
5.4
15.2
2.54
14-0.5
8.89
12.7
PIN 7
PIN 8
26.04
8
0.4
4-ø2.67
20.83
9
10.2
PIN 14
#
PIN DESIGNATIONS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
TEMPERATURE MONITOR
TEMPERATURE MONITOR
LASER DC BIAS (-)
MONITOR (ANODE)
MONITOR (CATHODE)
TEHP (+)
TEHP (-)
GROUND
GROUND
NC
LASER GROUND
LASER MODULATION (-)
GROUND
NC
29.97
0.4
4.15
5.8
L
31
21
15.5
* Note Fiber length (L) shall be specified
in the detail (individual) specification,
if it is special. L=1000±200 for standard.
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
Americas & R.O.W.
CAUTION
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.fcsi.fujitsu.com
• Do not put this product into the mouth.
FME, QDD
Fujitsu Microelectronics Europe GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FUJITSU QUANTUM DEVICES LIMITED
Global Business Division
Global Sales Support Department
Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku,
Shinjuku-ku, Tokyo, 163-0721, Japan
TEL: +81-3-5322-3356
FAX: +81-3-5322-3398
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0200M200
6
This Material Copyrighted by Its Respective Manufacturer
Edition 1.1
February 2000