1,310nm MQW-DFB CATV Laser FLD3F7CZ FEATURES • • • • BENEFITS Direct Modulation MQW DFB Laser • 78 Channel NTSC Loading Built-in TEC, Thermistor and Monitor PD (112 Channel device available) Optical Isolator • Low Residual CSO & CTB 14 Pin Butterfly Type Module • 11 dB Link Budget Available APPLICATIONS This MQW DFB laser is intended for application in analog AM, CATV at 1,310nm. Transmission spans of 30 km are possible without amplification. DESCRIPTION This MQW (Multiple Quantum Well) DFB laser for analog AM application is a high power laser capable of carrying 78 channels with excellent CSO, CTB, and CNR performance. It is packaged in a ‘butterfly’ type module. The module employs a high efficiency optical coupling system, coupling the laser output through a built-in optical isolator into a single mode fiber pigtail. The module also includes a monitor photodiode, a thermoelectric cooler (TEC) and a thermistor. ABSOLUTE MAXIMUM RATINGS (Tc=25°C) Symbol Ratings Unit Storage Temperature Tstg -40 to +70 °C Operating Case Temperature Top -20 to +65 °C Optical Output Power Pf 20 mW Laser Forward Current IF 150 mA Laser Reverse Voltage VR 2 V VDR 20 V TEC Voltage Vc 2.5 V TEC Current Ic 1.4 A Parameter Photodiode Reverse Voltage Edition 1.1 February 2000 1 This Material Copyrighted by Its Respective Manufacturer 1,310nm MQW-DFB CATV Laser FLD3F7CZ TEC & THERMISTOR CHARACTERISTICS (TL=25±1°C) Limits Symbol Min. Max. Unit Conditions TEC Current Ic - 1.0 A ∆T=40°C TEC Voltage Vc - 2.0 V ∆T=40°C TEC Capacity ∆T 40 - °C Ic=1A Thermistor Resistance Rtr 9.5 10.5 kΩ - Thermistor B Constant B K - Parameter Typ. 3,900 Tc = Case Temperature, TL = Laser Temperature OPTICAL AND ELECTRICAL CHARACTERISTICS (TL=25±1°C) Parameter Symbol Limits Min. Max. Unit Conditions Threshold Current Ith - 20 mA CW Forward Voltage (pin 3-13) VF - 1.5 V CW, IF=30mA Optical Output Power Pf 8 20 mW CW Slope Efficiency S 0.20 - mW/mA CW, IF=Iop Tracking Error TE -0.5 +0.5 dB Note (1) Monitor Current Im 120 1200 µA CW, IF=Iop, VDR=5V Photodiode Dark Current Id - 100 nA VDR=5V Photodiode Capacitance Ct - 12 pF VDR=5V, f=1MHz Peak Wavelength λp 1,290 1,330 nm CW, IF=Iop SSR 25 - dB CW, IF=Iop Bandwidth (-1dB) fc 1.5 - GHz Note (2) Isolation Is 25 - dB Tc=0 to 65°C Relative Intensity Noise RIN - -155 dB/Hz Note (3) Composite Second Power Composite Triple Beat Carrier to Noise Ratio CSO CTB CNR 50 -57 -65 - dBc dBc dB Note (4) SideMode Suppression Ratio (1) (2) (3) (4) Total change in Pf over -20<Tc<+65°C, Test conditions: Pf=8mW at TL=Tc=25°C. Constant current operation with TEC operating. Test condition: Pf=8mW, No matching network is used in the measurement. Test condition: Pf; same power of Note 4, measuring bandwidth: 45-600MHz, Optical reflection=-40dB (no long-haul fiber is used in the measurement.) Test condition: Pf=8mW (minimum), Optical Modulation, Index=3.2% channel (minimum), 78 unmodulated carriers (55.25 to 547.25 MHz; ch. 2 to 78 plus A-1), Optical link loss=11dB (30 km singlemode fiber), Noise equivalent current of 1st stage of the receiver=7pA/ Hz, Receiver responsivity=0.86A/W, Optical reflection=-40dB (excluding reflection from long-haul fiber). 2 This Material Copyrighted by Its Respective Manufacturer Edition 1.1 February 2000 1,310nm MQW-DFB CATV Laser FLD3F7CZ Fig. 2 Forward Current vs. Forward Voltage Fig. 1 Optical Output Power and Monitor Current vs. Laser Forward Current 25 1.0 100 TL=25°C Pf 0.8 Im 15 0.6 10 0.4 5 0.2 0 0 20 40 60 40 20 0 100 60 Pin 3-13 80 Forward Current, IF(mA) 20 Monitor Current, Im(mA) Optical Output Power, Pf(mW) TL=25°C 0 0.5 1.0 1.5 2.0 2.5 Forward Voltage, VF (V) Forward Current, IF(mA) Fig. 4 Lasing Spectrum 10 IF = Iop TL = 25°C 50 Relative Intensity (dB) Threshold Current, Ith(mA) Fig. 3 Temperature Dependence of Threshold Current 20 10 5 0 -20 -40 -60 -40 -20 0 20 40 60 1300 80 Laser Temperature, TL (°C) Edition 1.1 February 2000 This Material Copyrighted by Its Respective Manufacturer 1310 Wavelength (nm) 3 1320 1,310nm MQW-DFB CATV Laser FLD3F7CZ 0.5 TL = 25°C 0.4 I = I F op 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 -20 0 20 6 40 60 80 3 0 -3 0 1.0 2.0 Case Temperature, Tc (°C) Frequency (GHz) Fig. 7 RIN Characteristics Fig. 8 Thermistor Resistance vs. Temperature Thermistor Resistance, Rtr (KΩ) -110 Pf = 3mW, CW BR<-40dB TL=25°C -120 RIN (dB/Hz) Fig. 6 Frequency Response Relative Response (dB) Tracking Error (dB) Fig. 5 Tracking Characteristics -130 -140 -150 -160 200 100 50 20 10 5 2 1 -40 -170 0 1 -20 0 20 40 60 80 Temperature (°C) 2 Frequency (GHz) 4 This Material Copyrighted by Its Respective Manufacturer Edition 1.1 February 2000 1,310nm MQW-DFB CATV Laser FLD3F7CZ Fig. 10 CSO vs. Output Power 3.0 2.0 2.0 VC 1.0 1.0 IC 0.0 0.0 -1.0 0 10 20 30 40 50 60 70 -40 NTSC-78ch. (55.25-547.25MHz) m=3.5%/ch. 30km SMF (11dB Link) -50 CSO (dBc) 3.0 Cooler Current, Ic (A) Cooler Voltage, Vc (V) Fig. 9 Cooler voltage and Cooler Current vs. Case Temperature 548.5MHz -60 54MHz 194.5MHz -70 -1.0 80 -80 Case Temperature, Tc (°C) 5 6 7 8 9 10 11 12 13 14 15 Optical Output Power, Pf (mW) Fig. 12 CNR vs. Output Power Fig. 11 CTB vs. Output Power 60 -40 CNR (dB) -50 CTB (dBc) NTSC-78ch. (55.25-547.25MHz) m=3.5%/ch. 30km SMF (11dB Link) NTSC-78ch. (55.25-547.25MHz) m=3.5%/ch. 30km SMF (11dB Link) -60 55 & 547 MHz 55 MHz 50 313 MHz -70 -80 313 & 547 MHz 40 5 5 6 7 8 9 10 11 12 13 14 15 Optical Output Power, Pf (mW) Edition 1.1 February 2000 This Material Copyrighted by Its Respective Manufacturer 6 7 8 9 10 11 12 13 14 15 Optical Output Power, Pf (mW) 5 1,310nm MQW-DFB CATV Laser FLD3F7CZ “CZ” PACKAGE UNIT: mm 17.24 15.24 5.41 TOP VIEW 14-0.1 PIN 1 7 6 5 4 3 2 1 10 11 12 13 14 5.08 TEC 5.25 5.08 ø0.9 ø5.2 8.25 5.4 15.2 2.54 14-0.5 8.89 12.7 PIN 7 PIN 8 26.04 8 0.4 4-ø2.67 20.83 9 10.2 PIN 14 # PIN DESIGNATIONS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 TEMPERATURE MONITOR TEMPERATURE MONITOR LASER DC BIAS (-) MONITOR (ANODE) MONITOR (CATHODE) TEHP (+) TEHP (-) GROUND GROUND NC LASER GROUND LASER MODULATION (-) GROUND NC 29.97 0.4 4.15 5.8 L 31 21 15.5 * Note Fiber length (L) shall be specified in the detail (individual) specification, if it is special. L=1000±200 for standard. For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W. CAUTION 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.fcsi.fujitsu.com • Do not put this product into the mouth. FME, QDD Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES LIMITED Global Business Division Global Sales Support Department Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku, Shinjuku-ku, Tokyo, 163-0721, Japan TEL: +81-3-5322-3356 FAX: +81-3-5322-3398 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0200M200 6 This Material Copyrighted by Its Respective Manufacturer Edition 1.1 February 2000