PD-96983 Radiation Hardended, Solid-State Relay with Buffered Inputs Product Summary g RDHA710SE10A2FK Dual, 100V, 10A Part Number Breakdown Voltage Current tr / tf Logic Drive Voltage RDHA710SE10A2FK 100V 10A Fast 3.3V 8-PIN SURFACE MOUNT Description The RDHA710SE10A2FK is a radiation hardened dual solid-state relay in a hermetic package. It is configured as a dual, single-pole-single-throw (SPST) normally open relay with common input supply. This device is characterized for 100 krad(Si) total ionizing dose and neutron fluence level of 1.8E12 n/cm2. The input and output MOSFETs utilize International Rectifier’s R5 technology. T h e RDHA710SE10A2FK is optically coupled and actuated by standard logic inputs. Features: n n n n n n n n Total Dose Capability to 100 krad(Si) Neutron Fluence Level of 1.8E12 n/cm2 Optically Coupled 1000VDC Input to Output Isolation Buffered Input Stage 3.3V Compatible Logic Level Input Controlled Switching Times Hermetically Sealed Package Absolute Maximum Ratings per Channel @ Tj=25°C (unless otherwise specified) Symbol Value Units Output Maximum Voltage VS 100 V Output Current IO 12 A VIN ±7.5 V IIN ±10 mA VDD 5.25 V IDD PDISS 25 60 mA W Operating Temperature Range TJ -55 to +125 Storage Temperature Range TS TL -65 to +150 fg Parameter g Input Buffer Voltage - (pins 4 & 6) Input Buffer Current Input Supply Voltage (pin 5) Input Supply Current i Power Dissipation fg e i Lead Temperature °C 300 For notes, please refer to page 3 www.irf.com 1 03/29/06 RDHA710SE10A2FK General Characteristics per Channel @ -55°CdTCd+125°C (Unless Otherwise Specified) Parameter Group A ce Test Conditions Symbol Min. Typ. Max. Units Subgroups Input Buffer Threshold Voltage VDD = 5.0V, IO= 10A Input-to-Output Leakage Current 1 VI-O = 1.0KVdc, dwell = 5.0s VIN(TH) 3.0 -- -- V II-O -- -- 1.0 µA c Thermal Resistancec VIN = 0.1V, f = 1.0MHz, VS =25V TC = 25°C COSS -- 365 -- pF VIN = 3.3V, VDD = 5.0V RTHJC -- -- 1.7 °C/W MTBF (Per Channel) MIL-HDBK-217F, SF@Tc= 25°C 6.0 -- -- MHrs Output Capacitance c,f Pre-Irradiation Electrical Characteristics per Channel @ -55°CdTCd+125°C (Unless Otherwise Specified) Parameter Group A Test Conditions Symbol Min. Typ. Max. Units Subgroups Output On-Resistance Output Leakage Current Input Supply Current Input Buffer Current 1 VIN = 3.3V 2 VDD = 5.0V, IO= 10A VIN = 0.1V, VS = 100V 1 2 1,2,3 1 2,3 h 1,2,3 Turn-Off Delay h 1,2,3 dh 1,2,3 Turn-On Delay Rise Time , dh Fall Time , 1,2,3 VIN = 0.1V, VS = 80V VDD = 5.0V, IO= 10A VIN = 3.3V VIN =3.3V, VDD =5.0V, VS =30V RC = 7.0Ω/100µF, PW = 50ms VIN =0.1V, VDD =5.0V, VS =30V RC = 7.0Ω/100µF, PW = 50ms VIN =3.3V, VDD =5.0V, VS =30V RC = 7.0Ω/100µF, PW = 50ms VIN =0.1V, VDD =5.0V, VS =30V RC = 7.0Ω/100µF, PW = 50ms RDS(ON) -- 0.070 0.100 -- 0.125 0.165 -- -- 25 -- -- 250 -- 18 25 -- -- 1.0 -- -- 3.0 ton -- 0.18 0.45 toff -- 0.50 0.75 tr -- 0.25 0.40 tf -- 1.50 1.80 IO IDD IIN Ω µA mA µA ms For notes, please refer to page 3 2 www.irf.com RDHA710SE10A2FK Post Total Dose Irradiation ,, Electrical Characteristics per Channel @ 25°C (Unless Otherwise Specified) Parameter Group A Test Conditions Symbol Min. Typ. Max. Units Subgroups RDS(ON) -- VDD = 5.0V, IO= 10A IDD -- 18 VIN = 0.1V, VS = 100V IO IIN --- -- 25 -- 1.0 ton -- 0.18 0.45 toff -- 0.50 0.75 tr -- 0.25 0.40 tf -- 1.50 1.80 Output On-Resistance 1 VIN = 3.3V, VDD = 5.0V, IO= 10A Input Supply Current 1 Output Leakage Current Input Buffer Current 1 1 Turn-On Delay h 1 h 1 Turn-Off Delay dh Rise Time dh Fall Time 1 1 VIN = 3.3V VIN =3.3V, VDD =5.0V, VS =30V RC = 7.0Ω/100µF, PW = 50ms VIN =0.1V, VDD =5.0V, VS =30V RC = 7.0Ω/100µF, PW = 50ms VIN =3.3V, VDD =5.0V, VS =30V RC = 7.0Ω/100µF, PW = 50ms VIN =0.1V, VDD =5.0V, VS =30V RC = 7.0Ω/100µF, PW = 50ms 0.070 0.100 25 Ω mA µA ms Notes for Maximum Ratings and Electrical Characteristic Tables m n o Specification is guaranteed by design Rise and fall times are controlled internally Inputs protected for VIN< 1.0V and VIN > 7.5V Optically coupled Solid State Relays (SSRs) have relatively slow turn on and turn off times. Care must be taken to insure that transient currents do not cause violation of SOA. If transient conditions are present, IR recommends a complete simulation to be performed by the end user to insure compliance with SOA requirements as specified in the IRHNJ57130 data sheet While the SSR design meets the design requirements specified in MIL-PRF-38534, the end user is responsible for product derating, as required for the application Reference Figures 3 & 4 for Switching Test Circuits and Wave Form Total Dose Irradiation with Input Bias. 10mA IDD applied and VDS = 0 during Irradiation Total Dose Irradiation with Output Bias. 80 Volts VDS applied and IDD = 0 during Irradiation International Rectifier does not currently have a DSCC certified Radiation Hardness Assurance Program www.irf.com 3 RDHA710SE10A2FK 25 ID, Drain Current (A) 20 15 10 5 0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig 1: Maximum Drain Current Vs Case Temperature per Channel Pin 1 - OUT 1+ Pin 4 - INPUT 1 O pto Isolation Pin 3 - GND Pin 5 - VDD Pin 2 - OUT 1Pin 8 - OUT 2+ Pin 6 - INPUT 2 O pto Isolation Pin 7 - OUT 2- Fig 2: Typical Application Radiation Performance International Rectifier Radiation Hardened Solid State Relays are tested to verify their hardness capability. The hardness assurance program at IR uses a Cobalt-60 (60Co) Source and heavy ion irradiation. Both preand post- irradiation performance are tested and specified using the same drive circuitry and test conditions to provide a direct comparision. 4 www.irf.com RDHA710SE10A2FK 100 µFuF Fig 3: Switching Test Circuit (Only one channel shown) Fig 4: Switching Test Waveform www.irf.com 5 RDHA710SE10A2FK Case Outline and Dimensions — 8-Pin Surface Mount Package Pin Assignment Pin # Pin Description 1 OUT 1 + 2 OUT 1 - 3 INPUT GND 4 5 INPUT 1 VDD 6 INPUT 2 7 OUT 2 - 8 OUT 2 + Notes 1. 2. 3. 4. Dimensioning and Tolerancing per ASME Y14.5SM-1994 Controlling Dimension: Inch Dimensions are shown in inches Tolerances are +/- 0.005 UOS Part Numbering Nomenclature RD H A 7 10 SE Device Type RD = DC Solid State Relay Radiation Characterization H = RAD Hard Generation 10 A 2 F K Screening Level K = Class K per MIL-PRF-38534 Features F = 3.3 Volt Buffered Fast A = Current Design Poles Radiation Level 2 = Double Pole 7 = 100K Rad (Si) Current 10 = 10A Throw Configuration A = Single Throw, Normally Open Package Volts SE = 8-Pin Surface Mount 10 = 100 Volts 6 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR LEOMINSTER: 205 Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776 Data and specifications subject to change without notice. 03/2006 www.irf.com