SDR998CTN&P thru SDR9912CTN&P Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 100 AMP 800 -1200 Volts 80 nsec ULTRA FAST COMMON CATHODE RECTIFIER Features: • • • • • • • • • • Ultra Fast Recovery: 60 nsec typical High Surge Rating Low Reverse Leakage Current Low Forward Voltage Drop Low Junction Capacitance Hermetically Sealed Package Gold Eutectic Die Attach available Ultrasonic Aluminum Wire Bonds Ceramic Seals for improved hermeticity available Available in Common Anode and Doubler versions: SDR998CAN&P-SDR9912CAN&P SDR998DN&P-SDR9912DN&P • TX, TXV, Space Level Screening Available Consult Factory. TO-258 Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR998CTN&P SDR999CTN&P SDR9910CTN&P SDR9911CTN&P SDR9912CTN&P Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC)note 1, 2 Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC)note 2 Operating & Storage Temperature Maximum Thermal Resistance Junction to Case, each individual diode Junction to Case, note 1 TO-259 Symbol Value Units VRRM Volts VR 800 900 1000 1100 1200 Io 60 Amps IFSM 550 Amps Top & Tstg -65 to +200 ºC RθJE 0.9 0.5 ºC/W VRWM Note 1: Both legs tied together Note 2: Package limited NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0119B DOC SDR998CTN&P thru SDR9912CTN&P Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics Symbol Min Max Units Instantaneous Forward Voltage Drop (TA = 25ºC, 300 µsec pulse) Instantaneous Forward Voltage Drop (TA = -55ºC, 300 µsec pulse) (TA = 100ºC, 300 µsec pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µsec pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µsec pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A) IF = 25Adc IF = 50Adc VF1 –– 1.95 2.25 Volts IF = 25Adc IF = 25Adc VF2 –– 1.85 2.00 Volts IR1 –– 100 µA IR2 –– 10 mA CJ –– 100 pF trr –– 80 nsec Case Outline: TO-258 Pin1: Cathode Pin2: Anode Pin3: Anode Case Outline: TO-259 Pin1: Cathode Pin2: Anode Pin3: Anode TA = 25ºC PIN 3 DATA SHEET #: RU0119B PIN 2 PIN 1 PIN 3 PIN 2 PIN 1 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DOC