SDR953S1 thru SDR955S1 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Designer’s Data Sheet 50 AMP HYPER FAST RECTIFIER Part Number/Ordering Information 1/ SDR95 __ __ __ │ │ │ │ │ │ │ │ └ 2/ │ └ Screening __ = Not Screened │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Package S1= SMD1 Family/Voltage 3 = 300V 4 = 400V 5 = 500V 300 - 500 VOLTS 35 nsec FEATURES: Hyper Fast Recovery: 35 nsec Maximum High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Hermetically Sealed Surface Mount Package Gold Eutectic Die Attach Available Ultrasonic Aluminum Wire Bonds TX, TXV, or Space Level Screening Available Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage 3/ SDR953 SDR954 SDR955 Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Peak Surge Current 4/ (8.3 ms Pulse, Half Sine Wave, TA = 25ºC) Operating & Storage Temperature Maximum Thermal Resistance Junction to Case Symbol Value Units VRRM VRWM VR 300 400 500 Volts IO 50 Amps IFSM 450 Amps TOP & TSTG -65 to +200 ºC RθJC 0.8 ºC/W NOTES: 1/ For ordering information, price, and availability, contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Higher voltages available. 4/ Connect pins 2 & 3 together NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0027B SMD1 DOC SDR953S1 thru SDR955S1 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic Instantaneous Forward Voltage Drop 4/ (IF = 25 A, TA = 25ºC, 300µsec Pulse) Instantaneous Forward Voltage Drop 4/ (IF = 50 A, TA = 25ºC, 300µsec Pulse) Instantaneous Forward Voltage Drop (IF = 25 A, TA = 100ºC, 300µsec Pulse) Instantaneous Forward Voltage Drop (IF = 25 A,TA = -55ºC, 300µsec Pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µs pulse min.) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µs pulse min.) Junction Capacitance (VR = 10 VDC, TA = 25ºC, f = 1 MHz) Reverse Recovery Time (IF = 500mA, IR = 1A, IRR = 250mA, TA = 25ºC) Symbol Typ Max Units VF1 1.15 1.3 VDC VF2 1.35 1.5 VDC VF3 1.10 1.25 VDC VF4 1.20 1.40 VDC IR1 20 200 µA IR2 2.5 10 mA CJ 100 250 pF tRR 30 35 nsec CASE OUTLINE: SMD1 PIN 1: CATHODE PIN 2: ANODE PIN 3: ANODE NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0027B DOC