DATA SHEET LS4148 FAST SWITCHING SURFACE MOUNT DIODES POWER 100 Volts VOLTAGE QUADRO-MELF 500 mWatts Unit : inch (mm) FEATURES .063(1.6) .055(1.4)DIA. .0 67 (1 .7 ) • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above MECHANICAL DATA .020(0.5) .012(0.3) Case: QUADRO-MELF, Model Glass Terminals: Solderable per MIL-STD-202E, Method 208 Polarity: Cathode Band Marking: Cathode Band Only Weight: 0.03 grams Packing information .020(0.5) .012(0.3) .146(3.7) .130(3.3) T/R - 2.5K per 7" plastic Reel MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted) P A R A M E TE R S YM B O L LS 4148 U N IT S VR 75 V P e a k R e ve rse V o lta g e V RM 100 V R M S V o lta g e V RM S 50 V IA V 150 mA IF S M 500 mA P TO T 500 mW M a xim um F o rw a rd V o lta g e a t IF = 1 0 m A VF 1 .0 V M a xim um L e a ka g e C urre nt at V R =20V at V R =75V a t V R = 2 0 V ,T J= 1 5 0 O C IR 25 5 50 nA µA µA M a xim um C a p a cita nce (N o te 1 ) CJ 4 pF M a xim um R e ve rse R e co ve ry Tim e (N o te 2 ) TR R 4 ns M a xim um T he rm a l R e sista nce R θ JA 350 Junctio n Te m p e ra ture a nd S to ra g e Te m p e ra ture R a ng e T J,T S -6 5 to + 1 7 5 R e ve rse V o lta g e M a xim um A ve ra g e F o rw a rd C urre nt a t Ta = 2 5 O C A nd f > 5 0 H z S urg e F o rw a rd C urre nt a t t < 1 s a nd T j= 2 5 P o w e r D issip a tio n a t Ta m b = 2 5 O O C C O C /W O C NOTE: 1. CJ at VR=0, f=1MHZ 2. From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω STAD-JUL.30.2004 PAGE . 1 RATING AND CHARACTERISTIC CURVES A 10 2 I v=tp / T T=1/fp tp I FRM I FRM t T 10 1 V=0 V=0.1 10 V=0.2 0 V=0.3 -1 10 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 S tp Fig.1 ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 10 3 10 2 10 FORWARD CURRENT, mA FORWARD RESISTANCE, W O T J =25 C f=1KHz 1 0 10 -2 10 10 -1 10 0 10 1 10 2 0 FORWARD CURRENT, mA Fig.2-DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT 1.1 O T J =25 C f=1KHz 500 300 2 Fig.3 FORWARD CHARACTERISTICS CAPACITANCE, pF POWER DISSIPATION, mW 1 FORWARD VOLTAGE, VOLTS 1.0 0.9 0.8 100 0.7 0 100 AMBIENT TEMPERATURE Fig.4 DERATING CURVE STAD-JUL.30.2004 200 0 2 4 6 8 1.0 REVERSE VOLTAGE, VOLTS Fig.5 TYPICAL JUNCTION CAPACITANCE PAGE . 2