Dual In-Series Small-Signal Switching Diode ● ● LSD2004SLT1 Silicon Epitaxial Planar Diode Fast switching dual in-series diode, especially suited for applications requiring high voltage capability Top View Driver Marking LSD2004SLT1 =DB6 Maximum Ratings and Thermal Characteristics Parameter Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Forward Current (continuous) Peak Repetitive Forward Current Non-Repetitive Peak Forward Current at tp = 1µs at tp = 1s Power Dissipation Typical Thermal Resistance Junction to Ambiant Air Junction Temperature Storage Temperature Range TA = 25°C unless otherwise noted Symbol VR VRRM IRRM IF IRFM IFSM Ptot RΘJA Tj TS Value 240 300 200 225 625 Unit V V mA mA mA 4 A 1 350 mW 357 °C/W 150 °C –65 to +150 °C LSD2004SLT1─1/2 LSD2004SLT1 Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Symbol Reverse Breakdown Voltage VBR Leakage Current Forward Voltage Capacitance Reverse Recovery Time Test Condition IR = 100µA VR = 240V IR VR = 240V, Tj = 150°C IF = 20mA VF IF = 100mA VF=VR=0 Ctot f=1MHz IF=IA=30mA trr Irr=30mA,RL=100Ω Min 300 Typ Max ▬ ▬ ▬ ▬ ▬ ▬ Unit V nA µA V ▬ ▬ 100 100 0.87 1 ▬ ▬ 5 pF ▬ ▬ 50 ns ▬ SOT-23 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2.CONTROLLING DIMENSION:INCH LSD2004SLT1─2/2