HTSEMI BAS16V

BAS16V
SWITCHING DIODE
SOT-563
FEATURES
Fast Switching Speed
z
For General Purpose Switching Applications
z
High Conductance
z
1
Marking: KAM
Maximum Ratings @TA=25℃
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
VRM
100
V
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75
V
VR(RMS)
53
V
Forward Continuous Current
IFM
300
mA
Average Rectified Output Current
IO
200
mA
RMS Reverse Voltage
Peak forward surge current @=1.0μs
2.0
IFSM
@=1.0s
A
1.0
PD
150
mW
RθJA
833
K/W
Junction temperature
Tj
150
℃
Storage temperature
TSTG
-65~+150
℃
Power Dissipation
Thermal Resistance Junction to Ambient
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR) R
IR
Test
conditions
IR= 100µA
MIN
MAX
UNIT
75
V
VR=75V
1
µA
VR=20V
25
nA
0.715
0.855
1
1.25
V
2
pF
4
nS
Forward voltage
VF
IF=1mA
IF=10mA
IF=50mA
IF=150mA
Diode capacitance
CD
VR=0, f=1MHz
Reveres recovery time
trr
IF=IR=10mA,Irr=0.1×IR,
RL=100Ω
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
BAS16V
Typical Characteristics
2
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05