BAS16V SWITCHING DIODE SOT-563 FEATURES Fast Switching Speed z For General Purpose Switching Applications z High Conductance z 1 Marking: KAM Maximum Ratings @TA=25℃ Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage VRM 100 V Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 75 V VR(RMS) 53 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 200 mA RMS Reverse Voltage Peak forward surge current @=1.0μs 2.0 IFSM @=1.0s A 1.0 PD 150 mW RθJA 833 K/W Junction temperature Tj 150 ℃ Storage temperature TSTG -65~+150 ℃ Power Dissipation Thermal Resistance Junction to Ambient ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) R IR Test conditions IR= 100µA MIN MAX UNIT 75 V VR=75V 1 µA VR=20V 25 nA 0.715 0.855 1 1.25 V 2 pF 4 nS Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA Diode capacitance CD VR=0, f=1MHz Reveres recovery time trr IF=IR=10mA,Irr=0.1×IR, RL=100Ω 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 BAS16V Typical Characteristics 2 JinYu semiconductor www.htsemi.com Date:2011/ 05