Central TM NE W CMSD2004S Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION SUPER mini The CENTRAL SEMICONDUCTOR CMSD2004S type is a silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. TM SOT-323 CASE The following configurations are available: CMSD2004S DUAL, IN SERIES MAXIMUM RATINGS (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 ms Forward Surge Current, tp=1 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MARKING CODE: B6D SYMBOL VR VRRM IO IF IFRM IFSM IFSM PD TJ,Tstg QJA 240 300 200 225 625 4000 1000 250 -65 to +150 500 UNITS V V mA mA mA mA mA mW °C °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL BVR IR IR IR IR VF CT trr TEST CONDITIONS IR=100mA VR=200V VR=200V, TA=150°C VR=240V VR=240V, TA=150°C IF=100mA VR=0, f=1 MHz IF=IR=30mA, RECOV. TO 3.0mA,RL=100W 280 MIN 300 MAX 100 100 1.0 5.0 50 UNIT V nA mA nA mA V pF ns All dimensions in inches (mm). TOP VIEW LEAD CODE & $ $& R3 R2 281