V30100P New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 8 A FEATURES • Trench MOS Schottky Technology • Low forward voltage drop, low power losses • High efficiency operation 3 2 1 • Low thermal resistance • Solder Dip 260 °C, 40 seconds TO-247AD (TO-3P) PIN 1 PIN 2 PIN 3 CASE • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS MAJOR RATINGS AND CHARACTERISTICS IF(AV) 2 x 15 A VRRM 100 V IFSM 120 A VF at IF = 15 A 0.65 V Tj max. 150 °C For use in high frequency inverters, switching power supplies, free-wheeling diodes, Oring diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked Mounting Torque: 10 in-lbs Maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified (see Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range Document Number 88973 27-Apr-07 per device per diode SYMBOL V30100P UNIT VRRM 100 V IF(AV) 30 15 A IFSM 120 A TJ, TSTG - 40 to + 150 °C www.vishay.com 1 V30100P Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage at IR = 1.0 mA Instantaneous forward voltage (1) per diode Tj = 25 °C SYMBOL TYP. MAX. UNIT V(BR) 100 (minimum) - V 0.64 0.78 0.85 at IF = 8 A IF = 15 A Tj = 25 °C at IF = 8 A IF = 15 A Tj = 125 °C 0.57 0.65 0.71 at VR = 70 V Tj = 25 °C Tj = 125 °C 3.30 3.25 - µA mA at VR = 100 V Tj = 25 °C Tj = 125 °C 13.7 7.2 300 20 µA mA Reverse current (1) per diode V VF IR Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL V30100P UNIT RθJC 2.0 °C/W ORDERING INFORMATION PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 6.12 45 30/Tube Tube V30100P-E3/45 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 14 35 D = 0.8 D = 0.5 12 30 Average Power Loss (W) Average Forward Current (A) Resistive or Inductive Load 25 20 15 10 5 D = 0.3 10 D = 0.2 D = 1.0 D = 0.1 8 6 T 4 2 Mounted on specific heatsink D = tp/T tp 0 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 Case Temperature (°C) Average Forward Current (A) Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 Document Number 88973 27-Apr-07 V30100P Vishay General Semiconductor Instantaneous Forward Current (A) 100 10000 Tj = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Tj = 150 °C Tj = 125 °C 10 1000 Tj = 25 °C 100 1 0.1 10 0 0.5 1 1.5 0.1 2 1 Figure 3. Typical Instantaneous Forward Characteristics Per Diode 100 Figure 5. Typical Junction Capacitance Per Diode 100 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 10 Reverse Voltage (V) Instantaneous Forward Voltage (V) Tj = 150 °C 10 Tj = 125 °C 1 0.1 0.01 Tj = 25 °C 0.001 10 20 30 40 50 60 70 80 90 Junction to Case 1 0.1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-247AD (TO-3P) 0.645 (16.4) 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30 0.170 (4.3) 0.840 (21.3) 10 10 TYP. BOTH SIDES 0.142 (3.6) 0.138 (3.5) 0.820 (20.8) 1 2 1 REF. BOTH SIDES 3 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.078 REF (1.98) 0.117 (2.97) 0.118 (3.0) 0.108 (2.7) 0.795 (20.2) 0.775 (19.6) 0.225 (5.7) 0.205 (5.2) Document Number 88973 27-Apr-07 0.048 (1.22) 0.044 (1.12) 0.030 (0.76) 0.020 (0.51) PIN 1 PIN 2 PIN 3 CASE www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1