New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A FEATURES TMBS® eSMPTM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Trench MOS Schottky Technology 1 • Low forward voltage drop, low power losses 2 • High efficiency operation TO-277A (SMPC) K Cathode • Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C Anode 1 Anode 2 • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC MAJOR RATINGS AND CHARACTERISTICS IF(AV) 8A VRRM 100 V IFSM 150 A EAS 100 mJ VF at IF = 8 A 0.582 V Tj max. 150 °C TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters and polarity protection applications. MECHANICAL DATA Case: TO-277A (SMPC) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code V8P10 UNIT V810 Maximum repetitive peak reverse voltage VRRM 100 V Maximum average forward rectified current (see Fig. 1) IF(AV) 8 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 150 A Non-repetitive avalanche energy at IAS = 2.0 A, L = 50 mH, Tj = 25 °C EAS 100 mJ dv/dt 10000 V/µs TJ, TSTG - 40 to + 150 °C Voltage rate of change (rated VR) Operating junction and storage temperature range Document Number: 89005 Revision: 26-Jun-07 www.vishay.com 1 New Product V8P10 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage Instantaneous forward voltage (1) SYMBOL TYP MAX. UNIT V(BR) 100 (minimum) - V 0.522 0.643 0.68 at IR = 1.0 mA Tj = 25 °C at IF = 4 A at IF = 8 A Tj = 25 °C at IF = 4 A at IF = 8 A Tj = 125 °C 0.466 0.582 0.62 at VR = 70 V Tj = 25 °C Tj = 125 °C 4.7 3.0 - µA mA at VR = 100 V Tj = 25 °C Tj = 125 °C 14.5 7.0 70 15 µA mA Reverse current (1) V VF IR Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RθJA (1) RθJL Typical thermal resistance V8P10 UNIT 60 3 °C/W Note: (1) Units mounted on recommended P.C.B. 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V8P10-E3/86A 0.10 86A 1500 7" Diameter Plastic Tape & Reel V8P10-E3/87A 0.10 87A 6500 13" Diameter Plastic Tape & Reel V8P10HE3/86A (1) 0.10 86A 1500 7" Diameter Plastic Tape & Reel V8P10HE3/87A (1) 0.10 87A 6500 13" Diameter Plastic Tape & Reel Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 7.0 10 D = 0.5 8 6 4 2 TL measured at the cathode band terminal D = 0.2 5.0 D = 0.1 D = 1.0 4.0 3.0 T 2.0 D = tp/T 1.0 0 D = 0.8 D = 0.3 6.0 Average Power Loss (W) Average Forward Current (A) Resistive or Inductive Load tp 0 0 25 50 75 100 125 150 175 0 2 4 6 8 10 Lead Temperature (°C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics www.vishay.com 2 Document Number: 89005 Revision: 26-Jun-07 New Product V8P10 Vishay General Semiconductor 10000 Tj = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 Tj = 125 °C 1 0.1 100 Tj = 25 °C 10 0.01 0 0.2 0.4 0.6 0.8 1.0 0.1 1.2 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance 100 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 1000 Tj = 150 °C 10 Tj = 125 °C 1 0.1 0.01 Tj = 25 °C 0.001 10 20 30 40 50 60 70 80 90 100 Junction to Ambient 10 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 6. Typical Transient Thermal Impedance Document Number: 89005 Revision: 26-Jun-07 www.vishay.com 3 New Product V8P10 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 0.026 (0.65) nom 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 MIN. (4.80) 0.189 (4.80) 0.173 (4.40) 0.186 MIN. (4.72) 0.268 (6.80) 0.155 (3.94) nom 0.75 nom 0.049 (1.24) 0.037 (0.94) 0.050 MIN. (1.27) 0.084 (2.13) nom 0.041 (1.04) 0.053 (1.35) 0.041 (1.05) 0.055 MIN. (1.40) Conform to JEDEC TO-277A www.vishay.com 4 Document Number: 89005 Revision: 26-Jun-07 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1