TEA5767HN Low-power FM stereo radio for handheld applications Rev. 04 — 20 February 2006 Product data sheet 1. General description The TEA5767HN is a single-chip electronically tuned FM stereo radio for low-voltage applications with fully integrated IF selectivity and demodulation. The radio is completely adjustment-free and only requires a minimum of small and low cost external components. The radio can be tuned to the European, US and Japanese FM bands. 2. Features n High sensitivity due to integrated low-noise RF input amplifier n FM mixer for conversion to IF of the US/Europe (87.5 MHz to 108 MHz) and Japanese (76 MHz to 91 MHz) FM band n Preset tuning to receive Japanese TV audio up to 108 MHz n RF Automatic Gain Control (AGC) circuit n LC tuner oscillator operating with low cost fixed chip inductors n FM IF selectivity performed internally n No external discriminator needed due to fully integrated FM demodulator n Crystal reference frequency oscillator; the oscillator operates with a 32.768 kHz clock crystal or with a 13 MHz crystal and with an externally applied 6.5 MHz reference frequency n PLL synthesizer tuning system n I2C-bus and 3-wire bus, selectable via pin BUSMODE n 7-bit IF counter output via the bus n 4-bit level information output via the bus n Soft mute n Signal dependent mono to stereo blend [Stereo Noise Cancelling (SNC)] n Signal dependent High Cut Control (HCC) n Soft mute, SNC and HCC can be switched off via the bus n Adjustment-free stereo decoder n Autonomous search tuning function n Standby mode n Two software programmable ports n Bus enable line to switch the bus input and output lines into 3-state mode TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications 3. Quick reference data Table 1. Quick reference data VCCA = VCC(VCO) = VCCD; AC values are given in RMS; for VRF the EMF value is given; unless otherwise specified. Symbol Parameter VCCA Min Typ Max Unit analog supply voltage 2.5 3.0 5.0 V VCC(VCO) voltage controlled oscillator supply voltage 2.5 3.0 5.0 V VCCD digital supply voltage 2.5 3.0 5.0 V ICCA analog supply current operating; VCCA = 3 V 6.0 8.4 10.5 mA Standby mode; VCCA = 3 V - 3 6 µA ICC(VCO) voltage controlled oscillator supply current operating; VVCOTANK1 = VVCOTANK2 = 3 V 560 750 940 µA Standby mode; VVCOTANK1 = VVCOTANK2 = 3 V - 1 2 µA digital supply current operating; VCCD = 3 V 2.1 3.0 3.9 mA 30 56 80 µA ICCD Conditions Standby mode; VCCD = 3 V bus enable line HIGH bus enable line LOW fFM(ant) FM input frequency Tamb ambient temperature VCCA = VCC(VCO) = VCCD = 2.5 V to 5 V 11 19 26 µA 76 - 108 MHz −10 - +75 °C - 2 3.5 µV FM overall system parameters; see Figure 13 VRF RF sensitivity input voltage fRF = 76 MHz to 108 MHz; ∆f = 22.5 kHz; fmod = 1 kHz; (S+N)/N = 26 dB; de-emphasis = 75 µs; L = R; BAF = 300 Hz to 15 kHz S−200 low side 200 kHz selectivity ∆f = −200 kHz; ftune = 76 MHz to 108 MHz [1] 32 36 - dB S+200 high side 200 kHz selectivity ∆f = +200 kHz; ftune = 76 MHz to 108 MHz [1] 39 43 - dB VAFL left audio frequency VRF = 1 mV; L = R; output voltage ∆f = 22.5 kHz; fmod = 1 kHz; de-emphasis = 75 µs 60 75 90 mV VAFR right audio frequency output voltage 60 75 90 mV VRF = 1 mV; L = R; ∆f = 22.5 kHz; fmod = 1 kHz; de-emphasis = 75 µs TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 2 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Table 1. Quick reference data …continued VCCA = VCC(VCO) = VCCD; AC values are given in RMS; for VRF the EMF value is given; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit (S+N)/N maximum signal plus noise-to-noise ratio VRF = 1 mV; L = R; ∆f = 22.5 kHz; fmod = 1 kHz; de-emphasis = 75 µs; BAF = 300 Hz to 15 kHz 54 60 - dB αcs(stereo) stereo channel separation VRF = 1 mV; R = L = 0 or R = 0 and L = 1 including 9 % pilot; ∆f = 75 kHz; fmod = 1 kHz; data byte 3 bit 3 = 0; data byte 4 bit 1 = 1 24 30 - dB THD total harmonic distortion VRF = 1 mV; L = R; ∆f = 75 kHz; fmod = 1 kHz; de-emphasis = 75 µs - 0.4 1 % [1] Low side and high side selectivity can be switched by changing the mixer from high side to low side LO 4. Ordering information Table 2. Ordering information Type number TEA5767HN Package Name Description Version HVQFN40 plastic thermal enhanced very thin quad flat package; no leads; 40 terminals; body 6 × 6 × 0.85 mm SOT618-1 TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 3 of 39 xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x 29 R1 47 nF 33 nF 33 nF LIMDEC1 TIFC Vref MPXO TMUTE VAFR VAFL 28 27 26 25 24 23 22 Igain 32 GAIN STABILIZATION POWER SUPPLY AGND 33 22 nF VCCA 22 µF 34 VCCA 4.7 Ω RESONANCE AMPLIFIER DEMODULATOR LIMITER SOFT MUTE Philips Semiconductors 47 nF 5. Block diagram TEA5767HN_4 Product data sheet 47 nF LIMDEC2 SDS I/Q-MIXER 1st FM FM antenna RFI1 35 22 nF 18 PHASEFIL AGC TEA5767HN CRYSTAL OSCILLATOR TAGC 38 4.7 nF programmable divider output LOOPSW 39 Ccomp(1) 17 XTAL2 RFI2 37 TUNING SYSTEM MUX reference frequency divider output Cpull(1) 16 XTAL1 15 SWPORT2 10 kΩ SOFTWARE PROGRAMMABLE PORT 14 SWPORT1 VCCA 10 kΩ pilot 13 BUSENABLE mono I2C-BUS AND 3-WIRE BUS VCO 2 3 4 CPOUT VCOTANK1 10 nF 39 nF D1 VCOTANK2 D2 VCC(VCO) VCCD 6 7 8 9 DGND VCCD DATA CLOCK n.c. 12 Ω 47 Ω L2 22 nF VCC(VCO) The component list is given in Section 16. (1) Ccomp and Cpull data depends on crystal specification. 11 WRITE/READ mhc283 TEA5767HN 4 of 39 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. L3 100 kΩ 12 BUSMODE 1, 10, 20, 21, 30, 31, 40 22 nF 10 kΩ Fig 1. Block diagram 5 32.768 kHz or 13 MHz Low-power FM stereo radio for handheld applications Rev. 04 — 20 February 2006 47 pF 33 kΩ 22 nF Iref 27 pF RFGND 36 1 nF 19 PILFIL MPX DECODER IF CENTRE FREQUENCY ADJUST 100 pF L1 IF COUNTER LEVEL ADC 2 N1 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications 6. Pinning information 31 n.c. 32 Igain 33 AGND 34 VCCA 35 RFI1 36 RFGND 37 RFI2 38 TAGC terminal 1 index area 39 LOOPSW 40 n.c. 6.1 Pinning n.c. 1 30 n..c. CPOUT 2 29 LIMDEC2 VCOTANK1 3 28 LIMDEC1 VCOTANK2 4 27 TIFC VCC(VCO) 5 DGND 6 VCCD 7 24 TMUTE DATA 8 23 VAFR CLOCK 9 22 VAFL 26 Vref TEA5767HN 25 MPXO n.c. 20 PILFIL 19 PHASEFIL 18 XTAL2 17 XTAL1 16 SWPORT2 15 SWPORT1 14 BUSENABLE 13 BUSMODE 12 21 n.c. WRITE/READ 11 n.c. 10 001aab363 Transparent top view Fig 2. Pin configuration 6.2 Pin description Table 3. Pin description Symbol Pin Description n.c. 1 not connected CPOUT 2 charge pump output of synthesizer PLL VCOTANK1 3 voltage controlled oscillator tuned circuit output 1 VCOTANK2 4 voltage controlled oscillator tuned circuit output 2 VCC(VCO) 5 voltage controlled oscillator supply voltage DGND 6 digital ground VCCD 7 digital supply voltage DATA 8 bus data line input/output CLOCK 9 bus clock line input n.c. 10 not connected WRITE/READ 11 write/read control input for the 3-wire bus BUSMODE 12 bus mode select input BUSENABLE 13 bus enable input SWPORT1 14 software programmable port 1 SWPORT2 15 software programmable port 2 XTAL1 16 crystal oscillator input 1 TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 5 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Table 3. Pin description …continued Symbol Pin Description XTAL2 17 crystal oscillator input 2 PHASEFIL 18 phase detector loop filter PILFIL 19 pilot detector low-pass filter n.c. 20 not connected n.c. 21 not connected VAFL 22 left audio frequency output voltage VAFR 23 right audio frequency output voltage TMUTE 24 time constant for soft mute MPXO 25 FM demodulator MPX signal output Vref 26 reference voltage TIFC 27 time constant for IF center adjust LIMDEC1 28 decoupling IF limiter 1 LIMDEC2 29 decoupling IF limiter 2 n.c. 30 not connected n.c. 31 not connected Igain 32 gain control current for IF filter AGND 33 analog ground VCCA 34 analog supply voltage RFI1 35 RF input 1 RFGND 36 RF ground RFI2 37 RF input 2 TAGC 38 time constant RF AGC LOOPSW 39 switch output of synthesizer PLL loop filter n.c. 40 not connected 7. Functional description 7.1 Low-noise RF amplifier The Low Noise Amplifier (LNA) input impedance together with the LC RF input circuit defines an FM band filter. The gain of the LNA is controlled by the RF AGC circuit. 7.2 FM mixer The FM quadrature mixer converts the FM RF (76 MHz to 108 MHz) to an IF of 225 kHz. 7.3 VCO The varactor tuned LC VCO provides the Local Oscillator (LO) signal for the FM quadrature mixer. The VCO frequency range is 150 MHz to 217 MHz. TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 6 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications 7.4 Crystal oscillator The crystal oscillator can operate with a 32.768 kHz clock crystal or a 13 MHz crystal. The temperature drift of standard 32.768 kHz clock crystals limits the operational temperature range from −10 °C to +60 °C. The PLL synthesizer can be clocked externally with a 32.768 kHz, a 6.5 MHz or a 13 MHz signal via pin XTAL2. The crystal oscillator generates the reference frequency for: • • • • The reference frequency divider for the synthesizer PLL The timing for the IF counter The free-running frequency adjustment of the stereo decoder VCO The center frequency adjustment of the IF filters 7.5 PLL tuning system The PLL synthesizer tuning system is suitable to operate with a 32.768 kHz or a 13 MHz reference frequency generated by the crystal oscillator or applied to the IC from an external source. The synthesizer can also be clocked via pin XTAL2 at 6.5 MHz. The PLL tuning system can perform an autonomous search tuning function. 7.6 RF AGC The RF AGC prevents overloading and limits the amount of intermodulation products created by strong adjacent channels. 7.7 IF filter Fully integrated IF filter. 7.8 FM demodulator The FM quadrature demodulator has an integrated resonator to perform the phase shift of the IF signal. 7.9 Level voltage generator and analog-to-digital converter The FM IF analog level voltage is converted to 4 bits digital data and output via the bus. 7.10 IF counter The IF counter outputs a 7-bit count result via the bus. 7.11 Soft mute The low-pass filtered level voltage drives the soft mute attenuator at low RF input levels. The soft mute function can be switched off via the bus. 7.12 MPX decoder The PLL stereo decoder is adjustment-free. The stereo decoder can be switched to mono via the bus. TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 7 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications 7.13 Signal dependent mono to stereo blend With a decreasing RF input level the MPX decoder blends from stereo to mono to limit the output noise. The continuous mono to stereo blend can also be programmed via the bus to an RF level depending switched mono to stereo transition. Stereo Noise Cancelling (SNC) can be switched off via the bus. 7.14 Signal dependent AF response The audio bandwidth will be reduced with a decreasing RF input level. This function can be switched off via the bus. 7.15 Software programmable ports Two software programmable ports (open-collector) can be addressed via the bus. The port 1 (pin SWPORT1) function can be changed with write data byte 4 bit 0 (see Table 13). Pin SWPORT1 is then output for the ready flag of read byte 1. 7.16 I2C-bus and 3-wire bus The 3-wire bus and the I2C-bus operate with a maximum clock frequency of 400 kHz. Before any READ or WRITE operation the pin BUSENABLE has to be HIGH for at least 10 µs. The I2C-bus mode is selected when pin BUSMODE is LOW, when pin BUSMODE is HIGH the 3-wire bus mode is selected. TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 8 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Power on: Mute, stand-by activated All other status is random Complete initialization by microprocessor is required no Write enable activated? yes Reset bit counter: Bits are clocked into the receive register Completed bytes are written to the destinastion register Use value of tuning memory: Write result to the programmable divider (also available at the bus) Wait 10 ms. Have the signal level available at the bus Search Mode? no yes no Signal level OK? yes Reset IF counter and enable counting Wait for result Have the result available for the bus Search Mode? Search upwards? no no yes yes no IF frequency OK? yes Add 100 kHz to the tuning memory Substract 100 kHz to the tuning memory Upper tuning limit exceeded? Lower tuning limit exceeded? yes no Set 'found' flag no Set 'band limit' flag 001aae346 Fig 3. Flowchart auto search or preset TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 9 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications 8. I2C-bus, 3-wire bus and bus-controlled functions 8.1 I2C-bus specification Information about the I2C-bus can be found in the brochure “The I2C-bus and how to use it” (order number 9398 393 40011). The standard I2C-bus specification is expanded by the following definitions: IC address: 110 0000b Structure of the I2C-bus logic: slave transceiver Subaddresses are not used The maximum LOW-level input and the minimum HIGH-level input are specified to 0.2VCCD and 0.45VCCD respectively. The pin BUSMODE must be connected to ground to operate the IC with the I2C-bus. Remark: The I2C-bus operates at a maximum clock frequency of 400 kHz. It is not allowed to connect the IC to an I2C-bus operating at a higher clock rate. 8.1.1 Data transfer Data sequence: address, byte 1, byte 2, byte 3, byte 4 and byte 5 (the data transfer has to be in this order). The LSB = 0 of the address indicates a WRITE operation to the TEA5767HN. Bit 7 of each byte is considered as the MSB and has to be transferred as the first bit of the byte. The data becomes valid bitwise at the appropriate falling edge of the clock. A STOP condition after any byte can shorten transmission times. When writing to the transceiver by using the STOP condition before completion of the whole transfer: • The remaining bytes will contain the old information • If the transfer of a byte is not completed, the new bits will be used, but a new tuning cycle will not be started The IC can be switched into a low current Standby mode with the standby bit; the bus is then still active. The standby current can be reduced by deactivating the bus interface (pin BUSENABLE LOW). If the bus interface is deactivated (pin BUSENABLE LOW) without the Standby mode being programmed, the IC maintains normal operation, but is isolated from the bus lines. The software programmable output (SWPORT1) can be programmed to operate as a tuning indicator output. As long as the IC has not completed a tuning action, pin SWPORT1 remains LOW. The pin becomes HIGH, when a preset or search tuning is completed or when a band limit is reached. The reference frequency divider of the synthesizer PLL is changed when the MSB in byte 5 is set to logic 1. The tuning system can then be clocked via pin XTAL2 at 6.5 MHz. TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 10 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications 8.1.2 Power-on reset At Power-on reset the mute is set, all other bits are set to LOW. To initialize the IC all bytes have to be transferred. 8.2 I2C-bus protocol S(1) A(2) ADDRESS (WRITE) A(2) DATA BYTE(S) P(3) 001aae347 (1) S = START condition. (2) A = acknowledge. (3) P = STOP condition. Fig 4. Write mode S(1) A(2) ADDRESS (READ) DATA BYTE 1 001aae348 (1) S = START condition. (2) A = acknowledge. Fig 5. Read mode Table 4. IC address byte IC address 1 [1] Mode 1 0 0 0 0 R/W[1] Read or write mode: a) 0 = write operation to the TEA5767HN. b) 1 = read operation from the TEA5767HN. TEA5767HN_4 Product data sheet 0 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 11 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications SDA tf t LOW t SU;DAT tr t BUF tf t HD;STA SCL t HD;STA t HD;DAT t SU;STA t HIGH t SU;STO t HO;BUSEN t SU;BUSEN BUSENABLE 001aae349 tf = fall time of both SDA and SCL signals: 20 + 0.1Cb < tf < 300 ns, where Cb = capacitive load on bus line in pF. tr = rise time of both SDA and SCL signals: 20 + 0.1Cb < tf < 300 ns, where Cb = capacitive load on bus line in pF. tHD;STA = hold time (repeated) START condition. After this period, the first clock pulse is generated: > 600 ns. tHIGH = HIGH period of the SCL clock: > 600 ns. tSU;STA = set-up time for a repeated START condition: > 600 ns. tHD;DAT = data hold time: 300 ns < tHD;DAT < 900 ns. Remark: 300 ns lower limit is added because the ASIC has no internal hold time for the SDA signal. tSU;DAT = data set-up time: tSU;DAT > 100 ns. If ASIC is used in a standard mode I2C-bus system, tSU;DAT > 250 ns. tSU;STO = set-up time for STOP condition: > 600 ns. tBUF = bus free time between a STOP and a START condition: > 600 ns. Cb = capacitive load of one bus line: < 400 pF. tSU;BUSEN = bus enable set-up time: tSU;BUSEN > 10 µs. tHO;BUSEN = bus enable hold time: tHO;BUSEN > 10 µs. Fig 6. I2C-bus timing diagram 8.3 3-wire bus specification The 3-wire bus controls the write/read, clock and data lines and operates at a maximum clock frequency of 400 kHz. Hint: By using the standby bit the IC can be switched into a low current Standby mode. In Standby mode the IC must be in the WRITE mode. When the IC is switched to READ mode, during standby, the IC will hold the data line down. The standby current can be reduced by deactivating the bus interface (pin BUSENABLE LOW). If the bus interface is deactivated (pin BUSENABLE LOW) without the Standby mode being programmed, the IC maintains normal operation, but is isolated from the clock and data line. 8.3.1 Data transfer Data sequence: byte 1, byte 2, byte 3, byte 4 and byte 5 (the data transfer has to be in this order). A positive edge at pin WRITE/READ enables the data transfer into the IC. The data has to be stable at the positive edge of the clock. Data may change while the clock is LOW and is written into the IC on the positive edge of the clock. Data transfer can be stopped after the transmission of new tuning information with the first two bytes or after each following byte. TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 12 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications A negative edge at pin WRITE/READ enables the data transfer from the IC. The WRITE/READ pin changes while the clock is LOW. With the negative edge at pin WRITE/READ the MSB of the first byte occurs at pin DATA. The bits are shifted on the negative clock edge to pin DATA and can be read on the positive edge. To do two consecutive read or write actions, pin WRITE/READ has to be toggled for at least one clock period. When a search tuning request is sent, the IC autonomously starts searching the FM band; the search direction and search stop level can be selected. When a station with a field strength equal to or greater than the stop level is found, the tuning system stops and the ready flag bit is set to HIGH. When, during search, a band limit is reached, the tuning system stops at the band limit and the band limit flag bit is set to HIGH. The ready flag is also set to HIGH in this case. The software programmable output (SWPORT1) can be programmed to operate as a tuning indicator output. As long as the IC has not completed a tuning action, pin SWPORT1 remains LOW. The pin becomes HIGH, when a preset or search tuning is completed or when a band limit is reached. The reference frequency divider of the synthesizer PLL is changed when the MSB in byte 5 is set to logic 1. The tuning system can then be clocked via pin XTAL2 at 6.5 MHz. 8.3.2 Power-on reset At Power-on reset the mute is set, all other bits are random. To initialize the IC all bytes have to be transferred. 8.4 Writing data 50 % WRITE_READ tW(write) tsu(clk) CLOCK 50 % 50 % th(write) tsu(write) 50 % DATA valid data mhc250 Fig 7. 3-wire bus write data DATA BYTE 1 DATA BYTE 2 DATA BYTE 3 DATA BYTE 4 DATA BYTE 5 001aae350 Fig 8. Write mode TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 13 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Table 5. Format of 1st data byte 7 (MSB) MUTE 6 SM 5 4 3 2 PLL13 PLL12 PLL11 PLL10 PLL9 0 (LSB) PLL8 Table 6. Description of 1st data byte bits Bit Symbol Description 7 MUTE if MUTE = 1 then L and R audio are muted; if MUTE = 0 then L and R audio are not muted 6 SM Search mode: if SM = 1 then in search mode; if SM = 0 then not in search mode 5 to 0 PLL[13:8] setting of synthesizer programmable counter for search or preset Table 7. Format of 2nd data byte 7 (MSB) PLL7 6 PLL6 5 PLL5 4 PLL4 3 PLL3 2 PLL2 1 PLL1 0 (LSB) PLL0 Table 8. Description of 2nd data byte bits Bit Symbol Description 7 to 0 PLL[7:0] setting of synthesizer programmable counter for search or preset Table 9. Format of 3rd data byte 7 (MSB) SUD 6 5 SSL1 SSL0 4 HLSI 3 MS 2 MR 1 ML 0 (LSB) SWP1 Table 10. Description of 3rd data byte bits Bit Symbol Description 7 SUD Search Up/Down: if SUD = 1 then search up; if SUD = 0 then search down 6 and 5 SSL[1:0] Search Stop Level: see Table 11 4 HLSI High/Low Side Injection: if HLSI = 1 then high side LO injection; if HLSI = 0 then low side LO injection 3 MS Mono to Stereo: if MS = 1 then forced mono; if MS = 0 then stereo ON 2 MR Mute Right: if MR = 1 then the right audio channel is muted and forced mono; if MR = 0 then the right audio channel is not muted 1 ML Mute Left: if ML = 1 then the left audio channel is muted and forced mono; if ML = 0 then the left audio channel is not muted 0 SWP1 Software programmable port 1: if SWP1 = 1 then port 1 is HIGH; if SWP1 = 0 then port 1 is LOW Table 11. Search stop level setting SSL1 SSL0 Search stop level 0 0 not allowed in search mode 0 1 low; level ADC output = 5 1 0 mid; level ADC output = 7 1 1 high; level ADC output = 10 TEA5767HN_4 Product data sheet 1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 14 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Table 12. Format of 4th data byte 7 (MSB) 6 SWP2 STBY 5 BL 4 XTAL 3 SMUTE HCC 1 SNC 0 (LSB) SI Table 13. Description of 4th data byte bits Bit Symbol Description 7 SWP2 Software programmable port 2: if SWP2 = 1 then port 2 is HIGH; if SWP2 = 0 then port 2 is LOW 6 STBY Standby: if STBY = 1 then in Standby mode; if STBY = 0 then not in Standby mode 5 BL Band Limits: if BL = 1 then Japanese FM band; if BL = 0 then US/Europe FM band 4 XTAL Clock frequency: see Table 16 3 SMUTE Soft Mute: if SMUTE = 1 then soft mute is ON; if SMUTE = 0 then soft mute is OFF 2 HCC High Cut Control: if HCC = 1 then high cut control is ON; if HCC = 0 then high cut control is OFF 1 SNC Stereo Noise Cancelling: if SNC = 1 then stereo noise cancelling is ON; if SNC = 0 then stereo noise cancelling is OFF 0 SI Search Indicator: if SI = 1 then pin SWPORT1 is output for the ready flag; if SI = 0 then pin SWPORT1 is software programmable port 1 Table 14. Format of 5th data byte 7 (MSB) 6 PLLREF DTC 5 - 4 - 3 - 2 - 1 - 0 (LSB) - Table 15. Description of 5th data byte bits Bit Symbol Description 7 PLLREF if PLLREF = 1 then the 6.5 MHz reference frequency for the PLL is enabled; if PLLREF = 0 then the 6.5 MHz reference frequency for the PLL is disabled; see Table 16 6 DTC if DTC = 1 then the de-emphasis time constant is 75 µs; if DTC = 0 then the de-emphasis time constant is 50 µs 5 to 0 - not used; position is don’t care Table 16. Clock bits setting PLLREF XTAL Clock frequency 0 0 13 MHz 0 1 32.768 kHz 1 0 6.5 MHz 1 1 not allowed TEA5767HN_4 Product data sheet 2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 15 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications 8.5 Reading data 50 % WRITE_READ tW(read) tsu(clk) CLOCK tHIGH 50 % 50 % tLOW th td 50 % DATA 50 % mhc249 Fig 9. 3-wire bus read data DATA BYTE 1 DATA BYTE 2 DATA BYTE 3 DATA BYTE 4 DATA BYTE 5 001aae350 Fig 10. Read mode Table 17. Format of 1st data byte 7 (MSB) RF 6 BLF 5 4 3 2 PLL13 PLL12 PLL11 PLL10 PLL9 0 (LSB) PLL8 Table 18. Description of 1st data byte bits Bit Symbol Description 7 RF Ready Flag: if RF = 1 then a station has been found or the band limit has been reached; if RF = 0 then no station has been found 6 BLF Band Limit Flag: if BLF = 1 then the band limit has been reached; if BLF = 0 then the band limit has not been reached 5 to 0 PLL[13:8] setting of synthesizer programmable counter after search or preset Table 19. Format of 2nd data byte 7 (MSB) PLL7 Table 20. 6 PLL6 5 PLL5 4 PLL4 3 PLL3 2 PLL2 1 PLL1 0 (LSB) PLL0 Description of 2nd data byte bits Bit Symbol Description 7 to 0 PLL[7:0] setting of synthesizer programmable counter after search or preset Table 21. Format of 3rd data byte 7 (MSB) STEREO 6 IF6 5 IF5 4 IF4 3 IF3 TEA5767HN_4 Product data sheet 1 2 IF2 1 IF1 0 (LSB) IF0 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 16 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Table 22. Description of 3rd data byte bits Bit Symbol Description 7 STEREO Stereo indication: if STEREO = 1 then stereo reception; if STEREO = 0 then mono reception 6 to 0 PLL[13:8] IF counter result Table 23. Format of 4th data byte 7 (MSB) LEV3 6 5 4 LEV2 LEV1 LEV0 3 2 CI3 1 CI2 CI1 0 Table 24. Description of 4th data byte bits Bit Symbol Description 7 to 4 LEV[3:0] level ADC output 3 to 1 CI[3:1] Chip Identification: these bits have to be set to logic 0 0 - this bit is internally set to logic 0 Table 25. Format of 5th data byte 7 (MSB) 6 0 5 0 0 4 0 3 2 0 0 (LSB) 1 0 0 0 (LSB) 0 Table 26. Description of 5th data byte bits Bit Symbol Description 7 to 0 - reserved for future extensions; these bits are internally set to logic 0 9. Internal circuitry Table 27. Internal circuitry Pin Symbol 1 n.c. 2 CPOUT Equivalent circuit 270 Ω 2 3 VCOTANK1 4 VCOTANK2 mhc285 3 120 Ω 4 120 Ω mhc286 5 VCC(VCO) TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 17 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Table 27. Internal circuitry Pin Symbol 6 DGND 7 VCCD 8 DATA Equivalent circuit 8 6 9 mhc287 CLOCK 270 Ω 9 10 n.c. 11 WRITE/READ 6 mhc288 270 Ω 11 12 6 mhc289 BUSMODE 270 Ω 13 12 6 mhc290 13 6 mhc291 BUSENABLE 150 Ω TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 18 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Table 27. Internal circuitry Pin Symbol 14 SWPORT1 Equivalent circuit 150 Ω 14 6 15 mhc292 SWPORT2 150 Ω 15 6 16 XTAL1 17 XTAL2 mhc293 16 17 mhc294 18 PHASEFIL 18 33 19 mhc295 PILFIL 270 Ω 19 33 20 n.c. 21 n.c. 22 VAFL mhc296 10 Ω 22 33 TEA5767HN_4 Product data sheet mhc297 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 19 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Table 27. Internal circuitry Pin Symbol 23 VAFR Equivalent circuit 10 Ω 23 33 24 mhc298 TMUTE 24 1 kΩ 33 25 mhc299 MPXO 150 Ω 25 33 26 mhc300 Vref 26 33 mhc301 27 TIFC 40 kΩ 27 mhc302 TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 20 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Table 27. Internal circuitry Pin Symbol 28 LIMDEC1 Equivalent circuit 270 Ω 28 mhc303 29 LIMDEC2 270 Ω 29 mhc304 30 n.c. 31 n.c. 32 Igain 32 mhc305 33 AGND 34 VCCA 35 RFI1 36 RFGND 37 RFI2 35 36 TEA5767HN_4 Product data sheet 37 mhc306 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 21 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Table 27. Internal circuitry Pin Symbol 38 TAGC Equivalent circuit 38 36 39 mhc307 LOOPSW 5 39 mhc308 40 n.c. 10. Limiting values Table 28. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VVCOTANK1 VCO tuned circuit output voltage 1 Conditions −0.3 +8 V VVCOTANK2 VCO tuned circuit output voltage 2 −0.3 +8 V VCCD digital supply voltage −0.3 +5 V VCCA analog supply voltage −0.3 +8 V Tstg storage temperature −55 +150 °C Tamb ambient temperature Vesd electrostatic discharge voltage −10 +75 °C all pins except pin DATA [1] −200 +200 V [2] −2000 +2000 V pin DATA [1] −150 +200 V [2] −2000 +2000 V [1] Machine model (R = 0 Ω, C = 200 pF). [2] Human body model (R = 1.5 kΩ, C = 100 pF). 11. Thermal characteristics Table 29. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to in free air ambient TEA5767HN_4 Product data sheet Conditions Typ Unit 29 K/W © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 22 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications 12. Static characteristics Table 30. Static characteristics VCCA = VVCOTANK1 = VVCOTANK2 = VCCD = 2.7 V; Tamb = 25 °C; unless otherwise specified. Symbol Supply Parameter Conditions Min Typ Max Unit voltages[1] VCCA analog supply voltage 2.5 3.0 5.0 V VCC(VCO) voltage controlled oscillator supply voltage 2.5 3.0 5.0 V VCCD digital supply voltage 2.5 3.0 5.0 V VCCA = 3 V 6.0 8.4 10.5 mA VCCA = 5 V 6.2 8.6 10.7 mA VCCA = 3 V - 3 6 µA VCCA = 5 V - 3.2 6.2 µA VVCOTANK1 = VVCOTANK2 = 3 V 560 750 940 µA VVCOTANK1 = VVCOTANK2 = 5 V 570 760 950 µA VVCOTANK1 = VVCOTANK2 = 3 V - 1 2 µA VVCOTANK1 = VVCOTANK2 = 5 V - 1.2 2.2 µA VCCD = 3 V 2.1 3.0 3.9 mA VCCD = 5 V 2.25 3.15 4.05 mA bus enable line HIGH 30 56 80 µA bus enable line LOW 11 19 26 µA bus enable line HIGH 50 78 105 µA bus enable line LOW 20 33 45 µA Supply currents ICCA analog supply current operating Standby mode ICC(VCO) voltage controlled oscillator supply current operating Standby mode ICCD digital supply current operating Standby mode; VCCD = 3 V Standby mode; VCCD = 5 V [1] VCCA, VCC(VCO) and VCCD must not differ more than 200 mV. Table 31. DC operating points, unloaded DC voltage VCCA = VVCOTANK1 = VVCOTANK2 = VCCD = 2.7 V; Tamb = 25 °C; unless otherwise specified. Operating Conditions point VXTAL2 Max Unit 0.1 - VCC(VCO) − 0.1 V 1.64 1.72 1.8 V data byte 4 bit 4 = 0 1.68 1.75 1.82 V data byte 4 bit 4 = 1 1.64 1.72 1.8 V data byte 4 bit 4 = 0 1.68 1.75 1.82 V 0.4 1.2 VCCA − 0.4 V VPHASEFIL TEA5767HN_4 Product data sheet Typ data byte 4 bit 4 = 1 VCPOUT VXTAL2 Min © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 23 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Table 31. DC operating points, unloaded DC voltage …continued VCCA = VVCOTANK1 = VVCOTANK2 = VCCD = 2.7 V; Tamb = 25 °C; unless otherwise specified. Operating Conditions point Min Typ Max Unit VPILFIL 0.65 0.9 1.3 V VAFL fRF = 98 MHz; VRF = 1 mV 720 850 940 mV VAFR fRF = 98 MHz; VRF = 1 mV 720 850 940 mV VTMUTE VRF = 0 V 1.5 1.65 1.8 V VMPXO fRF = 98 MHz; VRF = 1 mV 680 815 950 mV Vref 1.45 1.55 1.65 V VTIFC 1.34 1.44 1.54 V VLIMDEC1 1.86 1.98 2.1 V VLIMDEC2 1.86 1.98 2.1 V VIgain 480 530 580 mV VRFI1 0.93 1.03 1.13 V VRFI2 0.93 1.03 1.13 V 1 1.57 2 V VTAGC VRF = 0 V 13. Dynamic characteristics Table 32. Dynamic characteristics VCCA = VVCOTANK1 = VVCOTANK2 = VCCD = 2.7 V; Tamb = 25 °C; measured in the circuit of Figure 13; AC values are given in RMS; for VRF the EMF value is given; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 150 - 217 MHz 140 - 350 mV data byte 4 bit 4 = 0 2 3 4 kΩ data byte 4 bit 4 = 1 230 330 430 kΩ data byte 4 bit 4 = 0 3.9 5.6 7.3 pF data byte 4 bit 4 = 1 5 6 7 pF - 32.768 - kHz Voltage controlled oscillator fosc oscillator frequency Crystal oscillator Circuit input: pin XTAL2 Vi(osc) oscillator input voltage oscillator externally clocked Ri input resistance oscillator externally clocked Ci input capacitance oscillator externally clocked Crystal: 32.768 kHz fr series resonance frequency ∆f/fr frequency deviation −20 × 10−6 - +20 × 10−6 C0 shunt capacitance - - 3.5 RS series resistance - - 80 ∆fr/fr(25 °C) temperature drift data byte 4 bit 4 = 1 −10 °C < Tamb < +60 °C −50 × data byte 4 bit 4 = 0 - 10−6 - +50 × 13 - pF kΩ 10−6 Crystal: 13 MHz fr series resonance frequency TEA5767HN_4 Product data sheet MHz © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 24 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Table 32. Dynamic characteristics …continued VCCA = VVCOTANK1 = VVCOTANK2 = VCCD = 2.7 V; Tamb = 25 °C; measured in the circuit of Figure 13; AC values are given in RMS; for VRF the EMF value is given; unless otherwise specified. Symbol Parameter Conditions Min ∆f/fr frequency deviation −30 × C0 shunt capacitance Cmot motional capacitance RS series resistance - ∆fr/fr(25 °C) temperature drift Typ 10−6 Max Unit 10−6 - +30 × - - 4.5 pF 1.5 - 3.0 fF - 100 −40 °C < Tamb < +85 °C −30 × data byte 1 = XX11 1111; data byte 2 = 1111 1110 data byte 1 = XX01 0000; data byte 2 = 0000 0000 10−6 - +30 × - - 8191 2048 - - - 1 - data byte 4 bit 4 = 0 - 260 - data byte 5 bit 7 = 1; data byte 4 bit 4 = 0 - 130 - data byte 4 bit 4 = 1 - 1 - kΩ 10−6 Synthesizer Programmable divider[1] Nprog ∆Nstep programmable divider ratio programmable divider step size Reference frequency divider Nref crystal oscillator divider ratio Charge pump: pin CPOUT Isink charge pump peak sink current 0.2 V < VCPOUT < VVCOTANK2 − 0.2 V; fVCO > fref × Nprog - 0.5 - µA Isource charge pump peak source 0.2 V < VCPOUT < current VVCOTANK2 − 0.2 V; fVCO < fref × Nprog - −0.5 - µA VRF RF input voltage for correct IF count - 12 18 µV NIF IF counter length - 7 - bit Nprecount IF counter prescaler ratio Tcount(IF) IF counter period IF counter - 64 - fxtal = 32.768 kHz - 15.625 - ms fxtal = 13 MHz - 15.754 - ms REScount(IF) IF counter resolution fxtal = 32.768 kHz - 4.096 - kHz fxtal = 13 MHz - 4.0625 - kHz IFcount IF counter result for search tuning stop fxtal = 32.768 kHz 29h - 3Dh fxtal = 13 MHz 30h - 3Dh 10 - - Pins DATA, CLOCK, WRITE/READ, BUSMODE and BUSENABLE Ri input resistance TEA5767HN_4 Product data sheet MΩ © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 25 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Table 32. Dynamic characteristics …continued VCCA = VVCOTANK1 = VVCOTANK2 = VCCD = 2.7 V; Tamb = 25 °C; measured in the circuit of Figure 13; AC values are given in RMS; for VRF the EMF value is given; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit data byte 3 bit 0 = 0; data byte 4 bit 0 = 0; VSWPORT1 < 0.5 V 500 - - µA −1 - +1 µA 500 - - µA −1 - +1 µA Software programmable ports Pin SWPORT1 Isink(max) maximum sink current Ileak(max) maximum leakage current data byte 3 bit 0 = 1; VSWPORT1 < 5 V Pin SWPORT2 Isink(max) maximum sink current data byte 4 bit 7 = 0; VSWPORT1 < 0.5 V Ileak(max) maximum leakage current data byte 4 bit 7 = 1; VSWPORT1 < 5 V FM signal channel FM RF input fFM(ant) FM input frequency 76 - 108 MHz Ri input resistance at pins RFI1 and RFI2 to RFGND 75 100 125 Ω Ci input capacitance at pins RFI1 and RFI2 to RFGND 2.5 4 6 pF VRF RF sensitivity input voltage fRF = 76 MHz to 108 MHz; ∆f = 22.5 kHz; fmod = 1 kHz; (S+N)/N = 26 dB; L = R; de-emphasis = 75 µs; BAF = 300 Hz to 15 kHz - 2 3.5 µV IP3in in-band 3rd-order intercept point related to VRFI1-RFI2 (peak value) ∆f1 = 200 kHz; ∆f2 = 400 kHz; ftune = 76 MHz to 108 MHz 81 84 - dBµV IP3out out-band 3rd-order intercept point related to VRFI1-RFI2 (peak value) ∆f1 = 4 MHz; ∆f2 = 8 Hz; ftune = 76 MHz to 108 MHz 82 85 - dBµV RF input voltage for start of AGC fRF1 = 93 MHz; fRF2 = 98 MHz; VRF2 = 50 dBµV; 66 72 78 dBµV 215 225 235 kHz RF AGC VRF1 [2] ∆V TMUTE 14 mV ------------------------ < ------------------3 dBµV V RF1 IF filter fIF IF filter center frequency BIF IF filter bandwidth 85 94 102 kHz S+200 high side 200 kHz selectivity ∆f = +200 kHz; ftune = 76 MHz to 108 MHz [3] 39 43 - dB S−200 low side 200 kHz selectivity ∆f = −200 kHz; ftune = 76 MHz to 108 MHz [3] 32 36 - dB S+100 high side 100 kHz selectivity ∆f = +100 kHz; ftune = 76 MHz to 108 MHz [3] 8 12 - dB TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 26 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Table 32. Dynamic characteristics …continued VCCA = VVCOTANK1 = VVCOTANK2 = VCCD = 2.7 V; Tamb = 25 °C; measured in the circuit of Figure 13; AC values are given in RMS; for VRF the EMF value is given; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit S-100 low side 100 kHz selectivity ∆f = −100 kHz; ftune = 76 MHz to 108 MHz 8 12 - dB IR image rejection ftune = 76 MHz to 108 MHz; VRF = 50 dBµV 24 30 - dB read mode data byte 4 bit 4 = 1 2 3 5 µV 2 3 5 dB VRF = 0 µV 1.55 1.65 1.80 V VRF = 3 µV 1.60 1.70 1.85 V VRF = 10 µV to 500 µV 150 165 180 mV -------------20 dB 280 400 520 kΩ [3] FM IF level detector and mute voltage VRF RF input voltage for start of level ADC ∆Vstep level ADC step size Pin TMUTE Vlevel level output DC voltage Vlevel(slope) slope of level voltage Ro output resistance FM demodulator: pin MPXO VMPXO demodulator output voltage VRF = 1 mV; L = R; ∆f = 22.5 kHz; fmod = 1 kHz; de-emphasis = 75 µs; BAF = 300 Hz to 15 kHz 60 75 90 mV (S+N)/N maximum signal plus noise-to-noise ratio VRF = 1 mV; L = R; ∆f = 22.5 kHz; fmod = 1 kHz; de-emphasis = 75 µs; BAF = 300 Hz to 15 kHz 54 60 - dB THD total harmonic distortion VRF = 1 mV; L = R; ∆f = 75 kHz; fmod = 1 kHz; de-emphasis = 75 µs - 0.5 1.5 % αAM AM suppression VRF = 300 µV; L = R; ∆f = 22.5 kHz; fmod = 1 kHz; m = 0.3; de-emphasis = 75 µs; BAF = 300 Hz to 15 kHz 40 - - dB Ro demodulator output resistance - - 500 Ω Isink demodulator output sink current - - 30 µA Soft mute VRF RF input voltage for soft mute start αmute = 3 dB; data byte 4 bit 3 = 1 3 5 10 µV αmute mute attenuation VRF = 1 µV; L = R; ∆f = 22.5 kHz; fmod = 1 kHz de-emphasis = 75 µs; BAF = 300 Hz to 15 kHz; data byte 4 bit 3 = 1 10 20 30 dB TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 27 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Table 32. Dynamic characteristics …continued VCCA = VVCOTANK1 = VVCOTANK2 = VCCD = 2.7 V; Tamb = 25 °C; measured in the circuit of Figure 13; AC values are given in RMS; for VRF the EMF value is given; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit MPX decoder VAFL left audio frequency output voltage VRF = 1 mV; L = R; ∆f = 22.5 kHz; fmod = 1 kHz; de-emphasis = 75 µs 60 75 90 mV VAFR right audio frequency output voltage VRF = 1 mV; L = R; ∆f = 22.5 kHz; fmod = 1 kHz; de-emphasis = 75 µs 60 75 90 mV RAFL left audio frequency output resistance - - 50 Ω RAFR right audio frequency output resistance - - 50 Ω Isink(AFL) left audio frequency output sink current 170 - - µA Isink(AFR) right audio frequency output sink current 170 - - µA VMPXIN(max) input overdrive margin THD < 3 % 4 - - dB VAFL left audio frequency output voltage difference VRF = 1 mV; L = R; ∆f = 75 kHz; fmod = 1 kHz; de-emphasis = 75 µs -1 - +1 dB VAFR right audio frequency output voltage difference VRF = 1 mV; L = R; ∆f = 75 kHz; fmod = 1 kHz; de-emphasis = 75 µs -1 - +1 dB αcs(stereo) stereo channel separation VRF = 1 mV; R = L = 0 or R = 0 and L = 1 including 9 % pilot; ∆f = 75 kHz; fmod = 1 kHz; data byte 3 bit 3 = 0; data byte 4 bit 1 = 1 24 30 - dB (S+N)/N maximum signal plus noise-to-noise ratio VRF = 1 mV; L = R; ∆f = 22.5 kHz; fmod = 1 kHz; de-emphasis = 75 µs; BAF = 300 Hz to 15 kHz 54 60 - dB THD total harmonic distortion VRF = 1 mV; L = R; ∆f = 75 kHz; fmod = 1 kHz; de-emphasis = 75 µs - 0.4 1 % αpilot pilot suppression measured at pins VAFL and VAFR related to ∆f = 75 kHz; fmod = 1 kHz; de-emphasis = 75 µs 40 50 - dB ∆fpilot stereo pilot frequency deviation VRF = 1 mV; read mode data byte 3 bit 7 = 1 - 3.6 5.8 kHz data byte 3 bit 7 = 0 1 3 - kHz 2 - - dB ∆f pilot1 ----------------∆f pilot2 pilot switch hysteresis VRF = 1 mV TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 28 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications Table 32. Dynamic characteristics …continued VCCA = VVCOTANK1 = VVCOTANK2 = VCCD = 2.7 V; Tamb = 25 °C; measured in the circuit of Figure 13; AC values are given in RMS; for VRF the EMF value is given; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit data byte 5 bit 6 = 0 38 50 62 µs data byte 5 bit 6 = 1 57 75 93 µs data byte 5 bit 6 = 0 114 150 186 µs data byte 5 bit 6 = 1 171 225 279 µs 4 10 16 dB VRF = 1 mV 24 - - dB VRF = 20 µV - - 1 dB High cut control TCde-em de-emphasis time constant VRF = 1 mV VRF = 1 µV Mono to stereo blend control αcs(stereo) stereo channel separation VRF = 45 µV; R = L = 0 or R = 0 and L = 1 including 9 % pilot; ∆f = 75 kHz; fmod = 1 kHz; data byte 3 bit 3 = 0; data byte 4 bit 1 = 1 Mono to stereo switched αcs(stereo) stereo channel separation switching from mono to stereo with increasing RF input level R = L = 0 or R = 0 and L = 1 including 9 % pilot; ∆f = 75 kHz; fmod = 1 kHz; data byte 3 bit 3 = 0; data byte 4 bit 1 = 0 Bus-driven mute functions Tuning mute αmute VAFL and VAFR muting depth data byte 1 bit 7 = 1 - - −60 dB αmute(L) VAFL muting depth data byte 3 bit 1 = 1; fAF = 1 kHz; Rload(L) < 30 kΩ - - −80 dB αmute(R) VAFR muting depth data byte 3 bit 2 = 1; fAF = 1 kHz; Rload(R) < 30 kΩ - - −80 dB [1] Calculation of this 14-bit word can be done as follows: formula for high side injection: 4 × ( f RF + f IF ) 4 × ( f RF – f IF ) N = --------------------------------------- ; formula for low side injection: N = --------------------------------------f ref f ref where: N = decimal value of PLL word; fRF = the wanted tuning frequency [Hz]; fIF = the intermediate frequency [Hz] = 225 kHz; fref = the reference frequency [Hz] = 32.768 kHz for the 32.768 kHz crystal; fref = 50 kHz for the 13 MHz crystal or when externally clocked with 6.5 MHz. 6 Example for receiving a channel at 100 MHz with high side injection: 3 4 × ( 100 × 10 + 225 × 10 ) N = -------------------------------------------------------------------- = 12234 32768 The PLL word becomes 2FCAh. [2] VRF in Figure 13 is replaced by VRF1 + VRF2. The radio is tuned to 98 MHz (high side injection). [3] Low side and high side selectivity can be switched by changing the mixer from high side to low side LO injection. TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 29 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications 14. FM characteristics 001aae351 0 VAFL, VAFR (dB) −20 4 THD+N (%) (1) 3 −40 2 (2) −60 1 (3) −80 10−1 1 102 10 103 104 0 106 105 VRF (µV) (1) Mono signal, no softmute, ∆f = 22,5 kHz. (2) Noise in mono mode, no softmute. (3) Total Harmonic Distortion (THD), ∆f = 75 kHz. Fig 11. FM mono characteristics 001aae352 0 4 (1) VAFL, VAFR (dB) −20 THD+N (%) (2) 3 −40 2 (3) −60 −80 10−1 1 (4) 1 10 102 103 104 0 106 105 VRF (µV) (1) Right channel with modulation right, SNC on, ∆f = 67,5 kHz + 6,75 kHz pilot. (2) Left channel with modulation left, SNC on, ∆f = 67,5 kHz + 6,75 kHz pilot. (3) Noise in stereo mode, SNC on, ∆f = 0 kHz + 6,75 kHz pilot. (4) Total Harmonic Distortion (THD), ∆f = 67,5 kHz + 6,75 kHz pilot. Fig 12. FM stereo characteristics TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 30 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications 15. I2C-bus characteristics Table 33. Digital levels and timing Symbol Parameter Conditions Min Max Unit Digital inputs VIH HIGH-level input voltage 0.45VCCD - V VIL LOW-level input voltage - 0.2VCCD V 500 - µA Digital outputs Isink(L) LOW-level sink current VOL LOW-level output voltage IOL = 500 µA - 450 mV clock input frequency I2C-bus enabled - 400 kHz 3-wire bus enabled - 400 kHz 1 - µs Timing fclk tHIGH clock HIGH time I2C-bus 3-wire bus enabled 1 - µs tLOW clock LOW time I2C-bus enabled 1 - µs 3-wire bus enabled 1 - µs 3-wire bus enabled 1 - µs enabled tW(write) pulse width for write enable tW(read) pulse width for read enable 3-wire bus enabled 1 - µs tsu(clk) clock set-up time 3-wire bus enabled 300 - ns th(out) read mode data output hold time 3-wire bus enabled 10 - ns td(out) read mode output delay time - 400 ns tsu(write) write mode set-up time 3-wire bus enabled 100 - ns th(write) write mode hold time 3-wire bus enabled 100 - ns 3-wire bus enabled 16. Test information Table 34. Component list for Figure 1 and Figure 13 Component Parameter Value Tolerance Type Manufacturer R1 resistor with low temperature coefficient 18 kΩ ±1 % RC12G Philips D1 and D2 varicap for VCO tuning - - BB202 Philips L1 RF band filter coil 120 nH ±2 % Qmin = 40 L2 and L3 VCO coil 33 nH ±2 % Qmin = 40 NX4025GA XTAL13MHz 13 MHz crystal - - Cpull pulling capacitor for NX4025GA 10 pF - - - XTAL32768Hz 32,768 kHz crystal Cpull [1] pulling capacitor for XTAL32768Hz Cload - Value of the Cpull must be as close as possible to the value of Cload of the crystal. TEA5767HN_4 Product data sheet [1] © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 31 of 39 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx 47 nF 29 R1 47 nF 33 nF Philips Semiconductors TEA5767HN_4 Product data sheet 47 nF LIMDEC2 33 nF LIMDEC1 TIFC Vref MPXO TMUTE VAFR VAFL 28 27 26 25 24 23 22 Igain 32 GAIN STABILIZATION POWER SUPPLY AGND 33 22 nF VCCA 22 µF 34 VCCA 4.7 Ω RESONANCE AMPLIFIER DEMODULATOR LIMITER SOFT MUTE SDS I/Q-MIXER 1st FM RFI1 35 47 pF 22 nF 18 PHASEFIL AGC TEA5767HN VRF CRYSTAL OSCILLATOR TAGC 38 4.7 nF programmable divider output LOOPSW 39 Ccomp(1) 17 XTAL2 RFI2 37 TUNING SYSTEM MUX reference frequency divider output Cpull(1) 16 XTAL1 15 SWPORT2 10 kΩ SOFTWARE PROGRAMMABLE PORT 14 SWPORT1 VCCA 10 kΩ pilot 13 BUSENABLE mono I2C-BUS AND 3-WIRE BUS VCO 2 3 CPOUT VCOTANK1 10 nF 39 nF D1 4 5 6 7 8 9 VCC(VCO) DGND VCCD DATA CLOCK n.c. D2 VCCD 47 Ω L2 22 nF VCC(VCO) Value of Cpull must be as close as possible to the value of Cload of the crystal. (1) Ccomp and Cpull data depends on crystal specification. Fig 13. Application and test diagram mhc284 TEA5767HN 32 of 39 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 22 nF L3 11 WRITE/READ VCOTANK2 10 kΩ 100 kΩ 12 BUSMODE 1, 10, 20, 21, 30, 31, 40 12 Ω 32.768 kHz or 13 MHz Low-power FM stereo radio for handheld applications Rev. 04 — 20 February 2006 L1 33 kΩ 22 nF Iref 27 pF RFGND 36 1 nF 19 PILFIL MPX DECODER IF CENTRE FREQUENCY ADJUST 100 pF 40 Ω IF COUNTER LEVEL ADC 2 N1 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications 17. Package outline HVQFN40: plastic thermal enhanced very thin quad flat package; no leads; 40 terminals; body 6 x 6 x 0.85 mm A B D SOT618-1 terminal 1 index area A E A1 c detail X C e1 1/2 e e 20 y y1 C v M C A B w M C b 11 L 21 10 e e2 Eh 1/2 e 1 30 terminal 1 index area 40 31 Dh X 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A(1) max. A1 b c D(1) Dh E(1) Eh e e1 e2 L v w y y1 mm 1 0.05 0.00 0.30 0.18 0.2 6.1 5.9 4.25 3.95 6.1 5.9 4.25 3.95 0.5 4.5 4.5 0.5 0.3 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT618-1 --- MO-220 --- EUROPEAN PROJECTION ISSUE DATE 01-08-08 02-10-22 Fig 14. Package outline SOT618-1 (HVQFN40) TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 33 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications 18. Soldering 18.1 Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. 18.2 Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 seconds and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 °C to 270 °C depending on solder paste material. The top-surface temperature of the packages should preferably be kept: • below 225 °C (SnPb process) or below 245 °C (Pb-free process) – for all BGA, HTSSON..T and SSOP..T packages – for packages with a thickness ≥ 2.5 mm – for packages with a thickness < 2.5 mm and a volume ≥ 350 mm3 so called thick/large packages. • below 240 °C (SnPb process) or below 260 °C (Pb-free process) for packages with a thickness < 2.5 mm and a volume < 350 mm3 so called small/thin packages. Moisture sensitivity precautions, as indicated on packing, must be respected at all times. 18.3 Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. • For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 34 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 °C or 265 °C, depending on solder material applied, SnPb or Pb-free respectively. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. 18.4 Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 seconds to 5 seconds between 270 °C and 320 °C. 18.5 Package related soldering information Table 35. Suitability of surface mount IC packages for wave and reflow soldering methods Package[1] Soldering method Wave Reflow[2] BGA, HTSSON..T[3], LBGA, LFBGA, SQFP, SSOP..T[3], TFBGA, VFBGA, XSON not suitable suitable DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP, HSQFP, HSSON, HTQFP, HTSSOP, HVQFN, HVSON, SMS not suitable[4] suitable PLCC[5], SO, SOJ suitable suitable not recommended[5][6] suitable SSOP, TSSOP, VSO, VSSOP not recommended[7] suitable CWQCCN..L[8], PMFP[9], WQCCN..L[8] not suitable LQFP, QFP, TQFP [1] For more detailed information on the BGA packages refer to the (LF)BGA Application Note (AN01026); order a copy from your Philips Semiconductors sales office. [2] All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods. [3] These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature exceeding 217 °C ± 10 °C measured in the atmosphere of the reflow oven. The package body peak temperature must be kept as low as possible. TEA5767HN_4 Product data sheet not suitable © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 35 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications [4] These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. [5] If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. [6] Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. [7] Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. [8] Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar soldering process. The appropriate soldering profile can be provided on request. [9] Hot bar soldering or manual soldering is suitable for PMFP packages. TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 36 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications 19. Revision history Table 36. Revision history Document ID Release date Data sheet status Change notice Supersedes TEA5767HN_4 20060220 Product data sheet - Modifications: TEA5767HN_3 (9397 750 13531) • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • Modified: Section 3 “Quick reference data” an EMF value remark is added to the header description • • Added: Figure 3 • • Replaced: Figure 11 and Figure 12 Modified: Section 13 “Dynamic characteristics” values of IFcount changed and EMF value remark is added to the header description Modified: component list of Table 34 updated TEA5767HN_3 (9397 750 13531) 20040920 Product data sheet - TEA5767HN_2 (9397 750 12071) TEA5767HN_2 (9397 750 12071) 20031112 Preliminary specification - TEA5767HN_1 (9397 750 09626) TEA5767HN_1 (9397 750 09626) 20020913 Preliminary specification - - TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 37 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications 20. Legal information 20.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com. 20.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 20.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 20.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. I2C-bus — logo is a trademark of Koninklijke Philips Electronics N.V. 21. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] TEA5767HN_4 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 04 — 20 February 2006 38 of 39 TEA5767HN Philips Semiconductors Low-power FM stereo radio for handheld applications 22. Contents 1 2 3 4 5 6 6.1 6.2 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 7.12 7.13 7.14 7.15 7.16 8 8.1 8.1.1 8.1.2 8.2 8.3 8.3.1 8.3.2 8.4 8.5 9 10 11 12 13 14 15 16 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pinning information . . . . . . . . . . . . . . . . . . . . . . 5 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5 Functional description . . . . . . . . . . . . . . . . . . . 6 Low-noise RF amplifier . . . . . . . . . . . . . . . . . . . 6 FM mixer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 VCO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Crystal oscillator . . . . . . . . . . . . . . . . . . . . . . . . 7 PLL tuning system . . . . . . . . . . . . . . . . . . . . . . 7 RF AGC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 IF filter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 FM demodulator . . . . . . . . . . . . . . . . . . . . . . . . 7 Level voltage generator and analog-to-digital converter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 IF counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Soft mute . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 MPX decoder . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Signal dependent mono to stereo blend . . . . . . 8 Signal dependent AF response . . . . . . . . . . . . 8 Software programmable ports . . . . . . . . . . . . . 8 I2C-bus and 3-wire bus . . . . . . . . . . . . . . . . . . . 8 2 I C-bus, 3-wire bus and bus-controlled functions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 I2C-bus specification . . . . . . . . . . . . . . . . . . . . 10 Data transfer . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Power-on reset . . . . . . . . . . . . . . . . . . . . . . . . 11 I2C-bus protocol . . . . . . . . . . . . . . . . . . . . . . . 11 3-wire bus specification . . . . . . . . . . . . . . . . . 12 Data transfer . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Power-on reset . . . . . . . . . . . . . . . . . . . . . . . . 13 Writing data . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Reading data . . . . . . . . . . . . . . . . . . . . . . . . . 16 Internal circuitry. . . . . . . . . . . . . . . . . . . . . . . . 17 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 22 Thermal characteristics. . . . . . . . . . . . . . . . . . 22 Static characteristics. . . . . . . . . . . . . . . . . . . . 23 Dynamic characteristics . . . . . . . . . . . . . . . . . 24 FM characteristics . . . . . . . . . . . . . . . . . . . . . . 30 I2C-bus characteristics . . . . . . . . . . . . . . . . . . 31 Test information . . . . . . . . . . . . . . . . . . . . . . . . 31 17 18 18.1 18.2 18.3 18.4 18.5 19 20 20.1 20.2 20.3 20.4 21 22 Package outline . . . . . . . . . . . . . . . . . . . . . . . . Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Introduction to soldering surface mount packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . Manual soldering . . . . . . . . . . . . . . . . . . . . . . Package related soldering information . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . Legal information . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 34 34 34 34 35 35 37 38 38 38 38 38 38 39 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. All rights reserved. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: [email protected]. Date of release: 20 February 2006 Document identifier: TEA5767HN_4