MAXIM DS1244

19-6077; Rev 11/11
www.maxim-ic.com
FEATURES












DS1244/DS1244P
256K NV SRAM with Phantom Clock
Real-Time Clock (RTC) Keeps Track of
Hundredths of Seconds, Minutes, Hours,
Days, Date of the Month, Months, and Years
32K x 8 NV SRAM Directly Replaces
Volatile Static RAM or EEPROM
Embedded Lithium Energy Cell Maintains
Calendar Operation and Retains RAM Data
Watch Function is Transparent to RAM
Operation
Automatic Leap Year Compensation Valid
Up to 2100
Full 10% Operating Range
Over 10 Years of Data Retention in the
Absence of Power
Lithium Energy Source is Electrically
Disconnected to Retain Freshness Until
Power is Applied for the First Time
DIP Module Only
Standard 28-Pin JEDEC Pinout
PowerCap Module Board Only
– Surface Mountable Package for Direct
Connection to PowerCap Containing
Battery and Crystal
– Replaceable Battery (PowerCap)
– Pin-for-Pin Compatible with DS1248P
and DS1251P
Underwriters Laboratories (UL) Recognized
PIN CONFIGURATIONS
TOP VIEW
28
27
26
25
24
23
22
21
20
19
18
17
VCC
13
16
DQ4
14
15
DQ3
A14/RST
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
1
2
3
4
5
6
7
8
9
10
11
12
DQ2
GND
DS1244
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
EDIP Module
(740 mils)
RST
N.C.
N.C.
N.C.
VCC
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
DS1244P
X1
GND VBAT
X2
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
PowerCap Module
(Uses DS9034PCX+ PowerCap)
1 of 20
N.C.
N.C.
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DS1244/DS1244P
TYPICAL OPERATING CIRCUIT
ORDERING INFORMATION
PART
TEMP RANGE
DS1244W-120+
DS1244W-120IND+
DS1244WP-120+
DS1244WP-120IND+
DS1244Y-70+
DS1244YP-70+
0°C to +70°C
-40°C to +85°C
0°C to +70°C
-40°C to +85°C
0°C to +70°C
0°C to +70°C
PIN-PACKAGE
28 EDIP (0.740a)
28 EDIP (0.740a)
34 PowerCap*
34 PowerCap*
28 EDIP (0.740a)
34 PowerCap*
VOLTAGE
(V)
3.3
3.3
3.3
3.3
5.0
5.0
+Denotes a lead(Pb)-free/RoHS-compliant device.
*DS9034PCX+ or DS9034I-PCX+ (PowerCap) required. (Must be ordered separately.)
2 of 20
DS1244/DS1244P
PIN DESCRIPTION
EDIP
PIN
PowerCap
NAME
1
1
A14/RST
1
2
3
4
5
6
7
8
9
10
21
23
24
25
26
11
12
13
15
16
17
18
19
20
22
27
32
30
25
24
23
22
21
20
19
18
28
29
27
26
31
16
15
14
13
12
11
10
9
8
7
6
2, 3, 4, 33,
34
5
17
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
A10
A11
A9
A8
A13
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE
OE
WE
—
28
14
FUNCTION
Address Input/Active-Low Reset Input. This pin has an internal
pullup resistor connected to VCC. A14 address on the EDIP
package.
Address Inputs
Data In/Data Out
Active-Low Chip-Enable Input
Active-Low Output-Enable Input
Active-Low Write-Enable Input
N.C.
No Connection
VCC
GND
Power-Supply Input
Ground
3 of 20
DS1244/DS1244P
DESCRIPTION
The DS1244 256K NV SRAM with a Phantom clock is a fully static nonvolatile RAM (NV SRAM)
(organized as 32K words by 8 bits) with a built-in real-time clock. The DS1244 has a self-contained
lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance
condition. When such a condition occurs, the lithium energy source is automatically switched on and
write protection is unconditionally enabled to prevent garbled data in both the memory and real-time
clock.
The phantom clock provides timekeeping information for hundredths of seconds, seconds, minutes, hours,
days, date, months, and years. The date at the end of the month is automatically adjusted for months with
fewer than 31 days, including correction for leap years. The phantom clock operates in either 24-hour or
12-hour format with an AM/PM indicator.
PACKAGES
The DS1244 is available in two packages: 28-pin encapsulated DIP and 34-pin PowerCap module. The
28-pin DIP-style module integrates the crystal, lithium energy source, and silicon all in one package. The
34-pin PowerCap module board is designed with contacts for connection to a separate PowerCap
(DS9034PCX) that contains the crystal and battery. This design allows the PowerCap to be mounted on
top of the DS1244P after the completion of the surface mount process. Mounting the PowerCap after the
surface mount process prevents damage to the crystal and battery due to the high temperatures required
for solder reflow. The PowerCap is keyed to prevent reverse insertion. The PowerCap module board and
PowerCap are ordered separately and shipped in separate containers. The part number for the PowerCap
is DS9034PCX.
RAM READ MODE
The DS1244 executes a read cycle whenever WE (write enable) is inactive (high) and CE (chip enable)
is active (low). The unique address specified by the 15 address inputs (A0–A14) defines which of the
32,768 bytes of data is to be accessed. Valid data is available to the eight data-output drivers within tACC
(access time) after the last address input signal is stable, providing that CE and OE (output enable)
access times and states are also satisfied. If OE and CE access times are not satisfied, then data access
must be measured from the later occurring signal ( CE or OE ) and the limiting parameter is either tCO for
CE or tOE for OE , rather than address access.
RAM WRITE MODE
The DS1244 is in the write mode whenever the WE and CE signals are in the active (low) state after
address inputs are stable. The latter occurring falling edge of CE or WE will determine the start of the
write cycle. The write cycle is terminated by the earlier rising edge of CE or WE . All address inputs
must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery
time (tWR ) before another cycle can be initiated. The OE control signal should be kept inactive (high)
during write cycles to avoid bus contention. However, if the output bus has been enabled ( CE and OE
active) then WE will disable the outputs in tODW from its falling edge.
4 of 20
DS1244/DS1244P
DATA RETENTION MODE
The 5V device is fully accessible and data can be written or read only when VCC is greater than VPF.
However, when VCC is below the power fail point, VPF (point at which write protection occurs), the
internal clock registers and SRAM are blocked from any access. When VCC falls below the battery switch
point, VSO (battery supply level), device power is switched from the VCC pin to the backup battery. RTC
operation and SRAM data are maintained from the battery until VCC is returned to nominal levels.
The 3.3V device is fully accessible and data can be written or read only when VCC is greater than VPF.
When VCC fall as below the VPF, access to the device is inhibited. If VPF is less than VBAT, the device
power is switched from VCC to the backup supply (VBAT ) when VCC drops below VPF. If VPF is greater
than VBAT, the device power is switched from VCC to the backup supply (VBAT ) when VCC drops below
VBAT. RTC operation and SRAM data are maintained from the battery until VCC is returned to nominal
levels.
All control, data, and address signals must be powered down when VCC is powered down.
PHANTOM CLOCK OPERATION
Communication with the phantom clock is established by pattern recognition on a serial bit stream of
64 bits, which must be matched by executing 64 consecutive write cycles containing the proper data on
DQ0. All accesses that occur prior to recognition of the 64-bit pattern are directed to memory.
After recognition is established, the next 64 read or write cycles either extract or update data in the
phantom clock, and memory access is inhibited.
Data transfer to and from the timekeeping function is accomplished with a serial bit stream under control
of the chip enable, output enable, and write enable. Initially, a read cycle to any memory location using
the CE and OE control of the phantom clock starts the pattern recognition sequence by moving a pointer
to the first bit of the 64-bit comparison register. Next, 64 consecutive write cycles are executed using the
CE and WE control of the SmartWatch. These 64 write cycles are used only to gain access to the
phantom clock. Therefore, any address to the memory in the socket is acceptable. However, the write
cycles generated to gain access to the phantom clock are also writing data to a location in the mated
RAM. The preferred way to manage this requirement is to set aside just one address location in RAM as a
phantom clock scratch pad. When the first write cycle is executed, it is compared to bit 0 of the 64-bit
comparison register. If a match is found, the pointer increments to the next location of the comparison
register and awaits the next write cycle. If a match is not found, the pointer does not advance and all
subsequent write cycles are ignored. If a read cycle occurs at any time during pattern recognition, the
present sequence is aborted and the comparison register pointer is reset. Pattern recognition continues for
a total of 64 write cycles as described above until all the bits in the comparison register have been
matched (Figure 1). With a correct match for 64 bits, the phantom clock is enabled and data transfer to or
from the timekeeping registers can proceed. The next 64 cycles will cause the phantom clock to either
receive or transmit data on DQ0, depending on the level of the OE pin or the WE pin. Cycles to other
locations outside the memory block can be interleaved with CE cycles without interrupting the pattern
recognition sequence or data transfer sequence to the phantom clock.
5 of 20
DS1244/DS1244P
PHANTOM CLOCK REGISTER INFORMATION
The phantom clock information is contained in eight registers of 8 bits, each of which is sequentially
accessed 1 bit at a time after the 64-bit pattern recognition sequence has been completed. When updating
the phantom clock registers, each register must be handled in groups of 8 bits. Writing and reading
individual bits within a register could produce erroneous results. These read/write registers are defined in
Figure 2.
Data contained in the phantom clock register is in binary coded decimal (BCD) format. Reading and
writing the registers is always accomplished by stepping through all eight registers, starting with bit 0 of
register 0 and ending with bit 7 of register 7.
Figure 1. PHANTOM CLOCK REGISTER DEFINITION
NOTE: THE PATTERN RECOGNITION IN HEX IS C5, 3A, A3, 5C, C5, 3A, A3, 5C. THE ODDS OF THIS PATTERN BEING
ACCIDENTALLY DUPLICATED AND CAUSING INADVERTENT ENTRY TO THE PHANTOM CLOCK IS LESS THAN 1 IN
1019. THIS PATTERN IS SENT TO THE PHANTOM CLOCK LSB TO MSB.
6 of 20
DS1244/DS1244P
Figure 2. PHANTOM CLOCK REGISTER DEFINITION
AM/PM/12/24 MODE
Bit 7 of the hours register is defined as the 12-hour or 24-hour mode-select bit. When high, the 12-hour
mode is selected. In the 12-hour mode, bit 5 is the AM/PM bit with logic high being PM. In the 24-hour
mode, bit 5 is the 20-hour bit (20–23 hours).
OSCILLATOR AND RESET BITS
Bits 4 and 5 of the day register are used to control the RESET and oscillator functions. Bit 4 controls the
RESET (pin 1). When the RESET bit is set to logic 1, the RESET input pin is ignored. When the RESET
bit is set to logic 0, a low input on the RESET pin will cause the phantom clock to abort data transfer
without changing data in the watch registers. Bit 5 controls the oscillator. When set to logic 1, the
oscillator is off. When set to logic 0, the oscillator turns on and the watch becomes operational. These
bits are shipped from the factory set to a logic 1.
ZERO BITS
Registers 1, 2, 3, 4, 5, and 6 contain one or more bits that always read logic 0. When writing these
locations, either a logic 1 or 0 is acceptable.
7 of 20
DS1244/DS1244P
BATTERY LONGEVITY
The DS1244 has a lithium power source that is designed to provide energy for clock activity and clock
and RAM data retention when the VCC supply is not present. The capability of this internal power supply
is sufficient to power the DS1244 continuously for the life of the equipment in which it is installed. For
specification purposes, the life expectancy is 10 years at +25°C with the internal clock oscillator running
in the absence of VCC power. Each DS1244 is shipped from Maxim with its lithium energy source
disconnected, guaranteeing full energy capacity. When VCC is first applied at a level greater than VPF , the
lithium energy source is enabled for battery-backup operation. Actual life expectancy of the DS1244 will
be much longer than 10 years since no lithium battery energy is consumed when VCC is present.
See “Conditions of Acceptability” at www.maxim-ic.com/TechSupport/QA/ntrl.htm.
CLOCK ACCURACY (DIP MODULE)
The DS1244 is guaranteed to keep time accuracy to within ±1 minute per month at +25°C. The clock is
calibrated at the factory by Maxim using special calibration nonvolatile tuning elements and does not
require additional calibration. For this reason, methods of field clock calibration are not available and not
necessary.
CLOCK ACCURACY (POWERCAP MODULE)
The DS1244P and DS9034PCX are each individually tested for accuracy. Once mounted together, the
module will typically keep time accuracy to within ±1.53 minutes per month (35ppm) at +25°C.
8 of 20
DS1244/DS1244P
ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground
(5V product) ………………………..-0.3V to +6.0V
(3.3V product) ……………………..-0.3V to +4.6V
Storage Temperature Range
EDIP ………………………………………………………….……………………-40ºC to +85ºC
PowerCap …………………………………………………………………………-55ºC to +125ºC
Lead Temperature (soldering, 10 seconds) ……………………………………………………… +260ºC
Note: EDIP is wave or hand-soldered only.
Soldering Temperature (reflow, PowerCap) …………………………………………………… +260ºC
This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operation
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time can affect
reliability.
OPERATING RANGE
RANGE
Commercial
Industrial
TEMP RANGE
(NONCONDENSING)
0°C to +70°C
-40°C to +85°C
VCC
3.3V ±10% or 5V ±10%
3.3V ±10% or 5V ±10%
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Input Logic 1
Input Logic 0
VCC = 5V ±10%
VCC = 3.3V ±10%
VCC = 5V ±15%
VCC = 3.3V ±10%
SYMBOL
MIN
VIH
VIL
Over the operating range
TYP
2.2
VCC + 0.3
2.0
VCC + 0.3
-0.3
0.8
-0.3
0.6
DC ELECTRICAL CHARACTERISTICS
PARAMETER
0B
MAX
UNITS
NOTES
V
11
V
11
Over the operating range (5V)
SYMBOL
MIN
IIL
TYP
MAX
UNITS
NOTES
-1.0
+1.0
µA
12
+1.0
µA
Input Leakage Current
I/O Leakage Current
CE ≥ VIH ≤ VCC
Output Current at 2.4V
IIO
-1.0
IOH
-1.0
mA
Output Current at 0.4V
IOL
2.0
mA
Standby Current CE = 2.2V
Standby Current
CE = VCC - 0.5V
Operating Current tCYC = 70ns
Write Protection Voltage
Battery Switchover Voltage
ICCS1
5
10
mA
ICCS2
3.0
5.0
mA
4.37
85
4.50
mA
V
11
V
11
ICC01
VPF
4.25
VSO
VBAT
9 of 20
7B
DS1244/DS1244P
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Input Leakage Current
I/O Leakage Current
CE ≥ VIH ≤ VCC
Output Current at 2.4V
Output Current at 0.4V
Standby Current CE = 2.2V
Standby Current
CE = VCC - 0.5V
Operating Current tCYC = 70ns
Write Protection Voltage
Battery Switchover Voltage
1B
Over the operating range (3.3V)
SYMBOL
IIL
MIN
-1.0
IIO
-1.0
IOH
IOL
ICCS1
-1.0
2.0
TYP
ICCS2
ICC01
VPF
VSO
2.80
MAX
+1.0
UNITS
µA
+1.0
µA
5
7
mA
mA
mA
2.0
3.0
mA
50
2.97
mA
V
V
2.86
VBAT or VPF
2B
(TA = +25°C)
SYMBOL
CIN
CI/O
MIN
TYP
5
5
MAX
10
10
MEMORY AC ELECTRICAL CHARACTERISTICS
PARAMETER
tRC
tACC
tOE
tCO
tCOE
tOD
tOH
tWC
tWP
tAW
tWR
tODW
tOEW
tDS
tDH
UNITS
pF
pF
UNITS
9B
10 of 20
NOTES
Over the operating range (5V)
DS1244Y-70
MIN
MAX
70
70
35
70
5
25
5
70
50
0
0
25
5
30
5
SYMBOL
10B
Read Cycle Time
Access Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
Output High-Z from Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High-Z from WE
Output Active from WE
Data Setup Time
Data Hold Time from WE
11
11
8B
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
NOTES
12
3B
NOTES
4B
1B
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
5
3
5
5
4
4
DS1244/DS1244P
PHANTOM CLOCK AC ELECTRICAL CHARACTERISTICS
PARAMETER
Read Cycle Time
CE Access Time
OE Access Time
CE to Output Low-Z
OE to Output Low-Z
CE to Output High-Z
OE to Output High-Z
Read Recovery
Write Cycle Time
Write Pulse Width
Write Recovery
Data Setup Time
Data Hold Time
CE Pulse Width
RESET Pulse Width
12B
SYMBOL
tRC
tCO
tOE
tCOE
tOEE
tOD
tODO
tRR
tWC
tWP
tWR
tDS
tDH
tCW
tRST
MIN
65
TYP
5
5
10
65
55
10
30
0
60
65
POWER-DOWN/POWER-UP TIMING
PARAMETER
CE at VIH before Power-Down
VCC Slew from VPF(max) to
VPF(min)( CE at VPF)
VCC Slew from VPF(min) to VSO
VCC Slew from VPF(max) to
VPF(min)( CE at VPF)
CE at VIH after Power-Up
13B
Over the operating range (5V)
MAX
UNITS NOTES
ns
55
ns
55
ns
ns
ns
25
ns
5
25
ns
5
ns
ns
ns
3
ns
10
ns
4
ns
4
ns
ns
Over the operating range (5V)
SYMBOL
tPD
tF
MIN
0
300
tFB
tR
10
0
tREC
1.5
TYP
MAX
UNITS
µs
µs
NOTES
µs
µs
2.5
ms
(TA = +25°C)
PARAMETER
Expected Data Retention Time
5B
SYMBOL
MIN
tDR
10
TYP
MAX
UNITS
NOTES
years
9
Warning: Under no circumstances are negative undershoots of any amplitude allowed when device
is in battery-backup mode.
11 of 20
DS1244/DS1244P
MEMORY AC ELECTRICAL CHARACTERISTICS
PARAMETER
Over the operating range (3.3V)
DS1244W-120
UNITS
NOTES
MIN
MAX
120
ns
120
ns
60
ns
120
ns
5
ns
5
40
ns
5
5
ns
120
ns
90
ns
3
0
ns
20
ns
10
40
ns
5
5
ns
5
50
ns
4
20
ns
4
SYMBOL
14B
Read Cycle Time
Access Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
Output High-Z from Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High-Z from WE
Output Active from WE
Data Setup Time
Data Hold Time from WE
tRC
tACC
tOE
tCO
tCOE
tOD
tOH
tWC
tWP
tAW
tWR
tODW
tOEW
tDS
tDH
PHANTOM CLOCK AC ELECTRICAL CHARACTERISTICS
PARAMETER
Read Cycle Time
CE Access Time
OE Access Time
CE to Output Low-Z
OE to Output Low-Z
CE to Output High-Z
OE to Output High-Z
Read Recovery
Write Cycle Time
Write Pulse Width
Write Recovery
Data Setup Time
Data Hold Time
CE Pulse Width
RESET Pulse Width
15B
SYMBOL
tRC
tCO
tOE
tCOE
tOEE
tOD
tODO
tRR
tWC
tWP
tWR
tDS
tDH
tCW
tRST
MIN
120
5
5
20
120
100
20
45
0
105
120
12 of 20
Over the operating range (3.3V)
TYP
MAX
UNITS NOTES
ns
100
ns
100
ns
ns
ns
40
ns
5
40
ns
5
ns
ns
ns
3
ns
10
ns
4
ns
4
ns
ns
DS1244/DS1244P
POWER-DOWN/POWER-UP TIMING
PARAMETER
CE at VIH before Power-Down
VCC Slew from VPF(MAX) to
VPF(MIN)( CE at VIH)
VCC Slew from VPF(MAX) to
VPF(MIN)( CE at VIH)
CE at VIH after Power-Up
16B
Over the operating range (3.3V)
SYMBOL
tPD
tF
MIN
0
300
tR
0
tREC
1.5
TYP
MAX
UNITS
µs
µs
NOTES
µs
2.5
ms
(TA = +25°C)
PARAMETER
Expected Data Retention Time
6B
SYMBOL
tDR
MIN
10
TYP
MAX
UNITS
years
NOTES
9
Warning: Under no circumstances are negative undershoots, of any amplitude, allowed when
device is in battery-backup mode.
13 of 20
DS1244/DS1244P
MEMORY READ CYCLE (Note 1)
MEMORY WRITE CYCLE 1 (Notes 2, 6, and 7)
14 of 20
DS1244/DS1244P
MEMORY WRITE CYCLE 2 (Notes 2 and 8)
RESET FOR PHANTOM CLOCK
READ CYCLE TO PHANTOM CLOCK
15 of 20
DS1244/DS1244P
WRITE CYCLE TO PHANTOM CLOCK
16 of 20
DS1244/DS1244P
POWER-DOWN/POWER-UP CONDITION, 5V
POWER-DOWN/POWER-UP CONDITION, 3.3V
17 of 20
DS1244/DS1244P
AC TEST CONDITIONS
Output Load: 50pF + 1TTL Gate
Input Pulse Levels: 0 to 3V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
NOTES:
1) WE is high for a read cycle.
2) OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high-impedance
state.
3) tWP is specified as the logical AND of CE and WE . tWP is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4) tDH, tDS are measured from the earlier of CE or WE going high.
5) These parameters are sampled with a 50pF load and are not 100% tested.
6) If the CE low transition occurs simultaneously with or later than the WE low transition in Write
Cycle 1, the output buffers remain in a high-impedance state during this period.
7) If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high-impedance state during this period.
8) If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high-impedance state during this period.
9) The expected tDR is defined as cumulative time in the absence of VCC with the clock oscillator
running.
10) tWR is a function of the latter occurring edge of WE or CE .
11) Voltages are referenced to ground.
12) RST (Pin 1) has an internal pullup resistor.
13) RTC modules can be successfully processed through conventional wave-soldering techniques as long
as temperature exposure to the lithium energy source contained within does not exceed +85°C. Postsolder cleaning with water-washing techniques is acceptable, provided that ultrasonic vibration is not
used.
In addition, for the PowerCap:
1) Maxim recommends that PowerCap module bases experience one pass through solder reflow oriented
with the label side up (“live-bug”).
2) Hand soldering and touch-up: Do not touch or apply the soldering iron to leads for more than three
seconds.
– To solder, apply flux to the pad, heat the lead frame pad, and apply solder. To remove the part,
apply flux, heat the lead frame pad until the solder reflows, and use a solder wick to remove
solder.
18 of 20
DS1244/DS1244P
PACKAGE INFORMATION
For the latest package outline information and land patterns (footprints), go to www.maxim-ic.com/packages. Note that a “+”,
“#”, or “-“ in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the
drawing pertains to the package regardless of RoHS status.
PACKAGE TYPE
PACKAGE CODE
OUTLINE NO.
LAND PATTERN NO.
32 EDIP
MDT28+4
21-0245

34 PWRCP
PC2+4
21-0246

19 of 20
DS1244/DS1244P
REVISION HISTORY
REVISION
DATE
11/11
DESCRIPTION
Updated the Features, Ordering Information, and Absolute Maximum
Ratings sections
PAGES
CHANGED
1, 2, 9
20 of 20
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim
reserves the right to change the circuitry and specifications without notice at any time.
M a x i m I n t e g r a t e d P r o d u c t s , 1 2 0 S a n G a b r i e l D r iv e , S u n n y v a le , C A 9 4 0 8 6 4 0 8- 7 3 7 - 7 6 0 0
© 2011 Maxim Integrated Products
Maxim is a registered trademark of Maxim Integrated Products, Inc.