SENSITRON SEMICONDUCTOR SHD224802 SHDCG224802 TECHNICAL DATA DATA SHEET 4203, REV. A Cool-Mos HERMETIC POWER MOSFET FEATURES: • 600 Volt, 0.07 Ohm, 47A MOSFET • • • • Isolated Hermetic Metal Package Low RDS (on); Low Effective Capacitance Ultra Low Gate Charge; very high dv/dt ratings Ceramic Seals with Glidcop leads (SHDCG224802) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE ON-STATE DRAIN CURRENT ON-STATE DRAIN CURRENT T=100 oC PULSED DRAIN CURRENT AVALANCHE ENERGY SINGLE PULSE ID = 10A, VDD = 50V AVALANCHE CURRENT TOTAL DEVICE DISSIPATION REVERSE DIODE dv/dt; IS = 47A; VDS = 480V OPERATING AND STORAGE TEMPERATURE THERMAL RESISTANCE, JUNCTION TO CASE SYMBOL MIN. TYP. MAX. UNITS VGS ID25 ID100 IDM - - ±20 47 30 140 Volts Amps Amps Amps EAS - - 1800 mJ IAR PD TJ/TSTG RθJC -55 - - 20 300 6000 +150 0.5 A Watts V/µsec °C °C/W SYMBOL MIN. TYP. MAX. UNITS BVDSS 600 - - Volts - 0.07 0.18 0.08 - 2.1 - 0.06 0.16 3 40 0.07 3.9 - - 0.5 - td(ON) tr td(OFF) tf - 18 27 111 8 25 250 100 -100 165 12 Qg VSD - 252 1.0 320 1.2 nC Volts trr - 580 - nsec Ciss Coss Crss - 6800 2200 145 - ELECTRICAL CHARACTERISTICS CHARACTERISTIC DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 250µA STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 30A T = 150°C STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 30A T = 150°C GATE THRESHOLD VOLTAGE VDS = VGS , ID = 2.7 mA FORWARD TRANSCONDUCTANCE VDS = 15V, ID = 30A ZERO GATE VOLTAGE DRAIN CURRENT VDS = Max. rating, VGS = 0V, TJ = 25°C TJ = 150°C GATE TO SOURCE LEAKAGE FORWARD VGS = 20V GATE TO SOURCE LEAKAGE REVERSE VGS = -20V TURN ON DELAY TIME VDD = 380V RISE TIME ID = 47A TURN OFF DELAY TIME VGS=13V FALL TIME R G = 1.8Ω GATE CHARGE VDD = 350V, ID = 47A, VGS = 10V DIODE FORWARD VOLTAGE IF = 47A, VGS = 0V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % REVERSE RECOVERY TIME TJ = 25°C, IF=47A, VR = 350V di/dt = 100A/µsec INPUT CAPACITANCE VGS = 0 V, OUTPUT CAPACITANCE VDS = 25 V, REVERSE TRANSFER CAPACITANCE f = 1.0MHz RDS(ON) Standard Version RDS(ON) Glidcop Version VGS(th) gfs IDSS IGSS Ω Ω Volts S(1/Ω) •221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798• • World Wide Web Site - www.sensitron.com • E-Mail Address - [email protected] • µA nA nsec pF SHD224802 SHDCG224802 SENSITRON TECHNICAL DATA DATA SHEET 4203, REV. A MECHANICAL DIMENSIONS: in Inches / mm .165 (4.19 .155 3.94) .270 (6.86 .240 6.10) .695 (17.65 Dia. .685 17.40) .045 (1.14 .035 0.89) .835 (21.21 .707 (17.96 .815 20.70) .697 17.70) .550 (13.97 .530 13.46) 1.302 (33.07 1 1.202 30.53) 2 .065 (1.65 .055 1.40) 3 Places 3 .200(5.08) BSC 2 Places .140(3.56) BSC TO-258 DEVICE TYPE N-CHANNEL MOSFET TO-258 PACKAGE PIN-1 DRAIN PIN-2 SOURCE PIN-3 GATE •221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798• • World Wide Web Site - www.sensitron.com • E-Mail Address - [email protected] • SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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