hermetic power mosfet n-channel ultra low rds(on)

SHD225623
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4144, REV. -
HERMETIC POWER MOSFET
N-CHANNEL ULTRA LOW RDS(ON)
FEATURES:
œ 200 Volt, 0.03 Ohm, 90A MOSFET
œ Isolated Hermetic Metal Package
œ Fast Switching
œ Ultra Low RDS (on)
MAXIMUM RATINGS
ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
PULSED DRAIN CURRENT
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 0.25 mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 56A
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 0.25mA
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25•C
TJ = 125•C
GATE TO SOURCE LEAKAGE FORWARD
VGS = 30V
GATE TO SOURCE LEAKAGE REVERSE
VGS = -30V
TURN ON DELAY TIME
VDD = 100V,
RISE TIME
ID = 56A
TURN OFF DELAY TIME
VGS=10V
FALL TIME
RG = 1.2W
DIODE FORWARD VOLTAGE
IS = 56A, VGS = 0V
Pulse test, t ˆ 300 ms, duty cycle d ˆ 2 %
REVERSE RECOVERY TIME
TJ = 25•C,
IF=56A, di/dt = 100A/msec
INPUT CAPACITANCE
VGS = 0 V
OUTPUT CAPACITANCE
VDS = 25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
THERMAL RESISTANCE, JUNCTION TO CASE
SYMBOL
VGS
ID
IDM
TJ/TSTG
PD
MIN.
-55
-
TYP.
-
MAX.
–30
90
380
+150
150
UNITS
Volts
Amps
Amps
•C
Watts
SYMBOL
BVDSS
MIN.
200
TYP.
-
MAX.
-
UNITS
Volts
RDS(ON)
VGS(th)
-
-
0.03
3
-
5
IDSS
-
-
IGSS
-
-
td(ON)
tr
td(OFF)
tf
-
23
160
43
79
25
250
100
-100
-
VSD
-
-
1.5
Volts
trr
Ciss
Coss
Crss
RthJC
-
230
6040
1070
170
-
340
-
nsec
1
•C/W
-
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-Mail Address - [email protected]
W
Volts
mA
nA
nsec
pF
SHD225623
SENSITRON
DATA SHEET 4144 REV. -
MECHANICAL DIMENSIONS: in Inches / mm
.149 (3.78
Dia.
.139 3.53)
(6.60
6.32)
(1.27
1.02)
.800 (20.32
.790 20.07) .545 (13.84
.535 13.58)
.685 (17.40
.665 16.89)
1.235(31.37
1.19530.35)
.260
.249
.050
.040
.545 (13.84
.535 13.60)
1 2 3
.045 (1.14
.035 0.89)
3 Places
.150(3.81) BSC
2 Places
.150(3.81) BSC
TO-254
DEVICE TYPE
N-CHANNEL MOSFET
TO-254 PACKAGE
PIN-1
DRAIN
PIN-2
SOURCE
PIN-3
GATE
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-Mail Address - [email protected]
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
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1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
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of the datasheet(s).
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means of users’ fail-safe precautions or other arrangement.
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• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected]