Red Enhanced Bi-Cell Silicon Photodiode SD 113-24-21-021 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .169 [4.29] .157 [3.99] 45° .075 [1.91] 3X Ø.018 [0.46] 1 Ø.264 [6.70] Ø.256 [6.50] Ø.330 [8.38] Ø.320 [8.13] Ø.200 [5.08] PIN CIRCLE 80° VIEWING ANGLE .010 [0.25] MAX GLASS ABOVE CAP TOP EDGE 2 3 Ø .362 [9.19] Ø .357 [9.07] 3X .500 [12.7] MIN CHIP DIMENSIONS INCH [mm] .120 [3.05] CHIP DIMENSIONS INCH [mm] .134 [3.40] 1 2 2X .048 [1.22] ACTIVE AREA .004 [0.10] GAP 3 ANODE CELL #2 DESCRIPTION APPLICATIONS The SD 113-24-21-021 is a red enhanced Bi-Cell silicon photodiode used for nulling, centering, or measuring small positional changes packaged in a hermetic TO-5 metal package. • Emitter Alignment • Position sensing • Medical and Industrial SPECTRAL RESPONSE ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED +125 +240 °C 0.50 0.40 0.30 0.20 0.10 Wavelength (nm) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTIC TEST CONDITIONS ID RSH Dark Current Shunt Resistance CJ CJ Junction Capacitance Junction Capacitance lrange Spectral Application Range VR =5 V VR = 10 mV VR = 0 V, f = 1 MHz VR = 10V, f = 1 MHz Spot Scan l= 633nm, VR = 0 V l= 900nm, VR = 0 V I = 10 μA VR = 0V @ l=950nm RL = 50 Ω,VR = 0 V RL = 50 Ω,VR = 10 V R Responsivity VBR NEP Breakdown Voltage Noise Equivalent Power tr Response Time** MIN TYP MAX UNITS 0.9 5.0 nA MW 250 60 13 350 0.32 0.50 pF 1100 0.36 0.55 50 2.5x10-14 190 13 nm A/W V W/ √ Hz nS **Response time of 10% to 90% is specified at 660nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com 1150 1100 1050 950 1000 900 250 850 0.00 * 1/16 inch from case for 3 seconds max. 800 Soldering Temperature* -40 °C °C 750 TS +150 700 Operating Temperature -55 0.60 650 TO V 600 Storage Temperature 50 550 TSTG 0.70 UNITS 500 Reverse Voltage MAX 450 VBR MIN 300 PARAMETER Responsivity (A/W) SYMBOL CASE GROUND & COMMON CATHODE TO-5 PACKAGE 400 Low noise Red enhanced High shunt resistance High response 2 TO-46 PACKAGE SCHEMATIC 350 • • • • ANODE CELL #1 CELL 2 2X .100 [2.54] ACTIVE AREA FEATURES 1 CELL 1