BUK7L11-34ARC TrenchPLUS standard level FET Rev. 03 — 3 December 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, integral gate resistor, ESD protection diodes and clamping diodes to protect the MOSFET from avalanching. 1.2 Features ■ ESD and overvoltage protection ■ Internal gate resistor ■ Q101 compliant ■ On-state resistance 8 mΩ (typ). 1.3 Applications ■ 12 V loads ■ Motors, lamps and solenoids. 1.4 Quick reference data ■ VDSR(CL) = 41 V (typ) ■ ID ≤ 89 A ■ RDSon = 8 mΩ (typ) ■ Ptot ≤ 172 W. 2. Pinning information Table 1: Pinning - SOT78C, simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base, connected to drain (d) Simplified outline Symbol mb d g s 1 2 3 MBL370 SOT78C (TO-220) MBL521 BUK7L11-34ARC Philips Semiconductors TrenchPLUS standard level FET 3. Ordering information Table 2: Ordering information Type number Package BUK7L11-34ARC Name Description Version TO-220 Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads. SOT78C 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) VDGR drain-gate voltage (DC) Conditions Min Max Unit [1] - 34 V [1] - 34 V [1] - ±20 V Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 [2] - 89 A [3] - 75 A Tmb = 100 °C; VGS = 10 V; Figure 2 [2] - 63 A - 358 A RGS = 20 kΩ gate-source voltage (DC) VGS drain current (DC) ID IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Ptot total power dissipation Tmb = 25 °C; Figure 1 - 172 W IDG(CL) drain-gate clamping current tp = 5 ms; δ = 0.01 - 50 mA IGS(CL) gate-source clamping current continuous - 10 mA tp = 5 ms; δ = 0.01 - 50 mA Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C [2] - 89 A [3] - 75 A - 358 A - 465 mJ human body model; C = 100 pF; R = 1.5 kΩ - 8 kV human body model; C = 250 pF; R = 1.5 kΩ - 6 kV Source-drain diode reverse drain current (DC) IDR IDRM peak reverse drain current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs Avalanche ruggedness EDS(CL)S non-repetitive drain-source clamped clamped inductive load; ID = 60 A; energy VDS ≤ 34 V; VGS = 10 V; starting Tj = 25 °C Electrostatic discharge Vesd [1] [2] [3] electrostatic discharge voltage; all pins Voltage is limited by clamping. Current is limited by power dissipation chip rating. Continuous current is limited by package. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12163 Product data Rev. 03 — 3 December 2003 2 of 14 BUK7L11-34ARC Philips Semiconductors TrenchPLUS standard level FET 03na19 120 03nj52 100 Capped at 75 A due to package ID (A) Pder (%) 75 80 50 40 25 0 0 0 50 100 150 200 Tmb (°C) 0 50 100 150 200 Tmb (°C) VGS ≥ 10 V P tot P der = ----------------------- × 100% P ° tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 03nj50 103 Limit RDSon = VDS / ID ID (A) tp = 10 µ s 102 100 µ s Capped at 75 A due to package 1 ms DC 10 10 ms 100 ms 1 1 10 VDS (V) 102 Tmb = 25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12163 Product data Rev. 03 — 3 December 2003 3 of 14 BUK7L11-34ARC Philips Semiconductors TrenchPLUS standard level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient vertical in still air - 60 - K/W Rth(j-mb) thermal resistance from junction to mounting base Figure 4 - 0.55 0.87 K/W 5.1 Transient thermal impedance 03nj51 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10-1 0.1 0.05 0.02 10-2 δ= P single shot tp T t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12163 Product data Rev. 03 — 3 December 2003 4 of 14 BUK7L11-34ARC Philips Semiconductors TrenchPLUS standard level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DG drain-gate zener breakdown voltage ID = 2 mA; VGS = 0 V Tj = 25 °C 34 - 45 V Tj = −55 °C 34 - 45 V - 41 - V Tj = 25 °C 2.2 3 3.8 V Tj = 175 °C 1.2 - - V Tj = 150 °C 1.5 - - V Tj = −55 °C - - 4.2 V Tj = 25 °C - 0.1 2 µA Tj = 150 °C - 3 50 µA IGS(CL) = −2 mA; ID = 1 A Figure 16 and 17 VDSR(CL) drain-source clamping voltage (DC) VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 IDSS drain-source leakage current [1] VDS = 16 V; VGS = 0 V Tj = 175 °C - 18 250 µA 20 22 - V Tj = 25 °C - 5 1000 nA Tj = 175 °C - - 50 µA - - 150 µA Tj = 25 °C - 8 11 mΩ Tj = 175 °C - - 20.9 mΩ 7 9.7 mΩ - 11 - Ω VGS = 10 V; VDS = 27 V; ID = 25 A; Figure 14 - 53 - nC - 11 - nC - 20 - nC VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 - 1880 2506 pF - 640 768 pF - 400 548 pF V(BR)GSS gate-source breakdown voltage IG = ±1 mA; −55 °C < Tj < +175 °C IGSS gate-source leakage current VGS = ±10 V; VDS = 0 V VGS = 16 V; VDS = 0 V Tj = 175 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 30 A; Figure 7 and 8 VGS = 16 V; ID = 30 A RG Internal gate resistor Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12163 Product data Rev. 03 — 3 December 2003 5 of 14 BUK7L11-34ARC Philips Semiconductors TrenchPLUS standard level FET Table 5: Characteristics…continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit td(on) turn-on delay time - 20 - nS tr rise time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG = 10 Ω - 92 - nS td(off) turn-off delay time - 127 - nS tf fall time Ld internal drain inductance internal source inductance Ls - 118 - nS measured from drain lead 6 mm from package to center of die - 4.5 - nH measured from contact screw on mounting base to center of die SOT78C - 3.5 - nH measured from source lead to source bond pad - 7.5 - nH Source-drain diode VSD source-drain (diode forward) voltage IS = 10 A; VGS = 0 V; Figure 15 - 0.85 1.2 V trr reverse recovery time - 52 - ns Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 30 V - 28 - nC [1] Independent testing of MOSFET and clamping diodes safeguards against avalanching. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12163 Product data Rev. 03 — 3 December 2003 6 of 14 BUK7L11-34ARC Philips Semiconductors TrenchPLUS standard level FET 03nj47 400 Label is VGS (V) ID (A) 20 16 300 25 12 10 9.5 9 8.5 8 7.5 7 6.5 6 5.5 5 4.5 4 14 200 100 0 0 2 03nj46 30 RDSon (mΩ) 4 20 15 10 5 6 8 10 VDS (V) Tj = 25 °C; tp = 300 µs 5 10 15 20 VGS (V) Tj = 25 °C; ID = 30 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 03nj48 25 03aa27 2 Label is VGS (V) RDSon (mΩ) 5 6 7 8 a 10 20 1.5 15 1 10 0.5 20 5 0 0 100 200 300 ID (A) 400 Tj = 25 °C; tp = 300 µs -60 60 120 Tj (°C) 180 R DSon a = ---------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12163 Product data 0 Rev. 03 — 3 December 2003 7 of 14 BUK7L11-34ARC Philips Semiconductors TrenchPLUS standard level FET 03nh86 5 VGS(th) ID (A) max (V) 03nh87 10-1 10-2 4 typ 10-3 3 min typ max min 10-4 2 10-5 1 10-6 0 -60 0 60 120 Tj (°C) 0 180 2 4 6 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 03nj44 40 Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03nj49 4000 C (pF) gfs (S) 30 3000 20 2000 10 1000 C iss C oss C rss 0 0 0 20 40 60 80 10-1 1 Tj = 25 °C; VDS = 25 V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12163 Product data 102 10 VDS (V) ID (A) Rev. 03 — 3 December 2003 8 of 14 BUK7L11-34ARC Philips Semiconductors TrenchPLUS standard level FET 03nj45 100 03nj43 10 VGS (V) 8 ID (A) 75 6 VDD = 14 V 50 VDD = 27 V 4 25 2 Tj = 175 °C Tj = 25 °C 0 0 0 2 4 6 VGS (V) 8 0 20 40 60 QG (nC) Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. 03nj42 100 IS (A) 75 50 Tj = 175 °C 25 Tj = 25 °C 0 0.0 0.3 0.6 0.9 1.2 VSD (V) VGS = 0 V Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12163 Product data Rev. 03 — 3 December 2003 9 of 14 BUK7L11-34ARC Philips Semiconductors TrenchPLUS standard level FET 03nj59 42.0 VDSR(CL) (V) Tj = 175 °C Tj = 25 °C Tj = −55 °C 03nj58 43 VDSR(CL) (V) Tj = 175 °C Tj = 25 °C Tj = −55 °C 42 41.5 41 41.0 40 40.5 39 0 2 4 6 8 ID (A) 10 IGD = −2 mA 0 2 −IGS(CL) (mA) 3 ID = 10 A Fig 16. Drain-source clamping voltage as a function of drain current; typical values. Fig 17. Drain-source clamping voltage as a function of gate-source clamping current; typical values. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12163 Product data 1 Rev. 03 — 3 December 2003 10 of 14 BUK7L11-34ARC Philips Semiconductors TrenchPLUS standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78C E A p A1 mounting base q D1 q1 D q2 L1 L Q b1 1 2 3 b c e e1 H 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e e1 H L L1 p Q q q1 q2 mm 4.58 4.31 1.33 1.21 0.87 0.76 1.33 1.21 0.44 0.33 15.07 14.80 6.47 6.22 10.40 10.00 2.64 2.44 5.16 5.00 6.03 5.76 14.00 13.50 6.10 5.58 3.90 3.78 2.72 2.40 2.95 2.69 3.80 3.42 12.40 12.00 Notes 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78C REFERENCES IEC JEDEC JEITA 3-lead TO-220 EUROPEAN PROJECTION ISSUE DATE 01-12-11 03-01-21 Fig 18. SOT78C (TO-220). © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12163 Product data Rev. 03 — 3 December 2003 11 of 14 BUK7L11-34ARC Philips Semiconductors TrenchPLUS standard level FET 8. Revision history Table 6: Revision history Rev Date 03 20031203 CPCN Description - Product data (9397 750 12163) • 02 20030522 - Product data (9397 750 11472) • 01 20030423 - Avalanche Ruggedness parameter description in Section 4 changed from: ‘non-repetitive drain-source avalanche energy’ to ‘non-repetitive drain-source clamp energy’. Typical values of IDSS added to characteristics table, Section 6. Product data (9397 750 11178) © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12163 Product data Rev. 03 — 3 December 2003 12 of 14 BUK7L11-34ARC Philips Semiconductors TrenchPLUS standard level FET 9. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Trademarks — TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. 11. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12163 Rev. 03 — 3 December 2003 13 of 14 Philips Semiconductors BUK7L11-34ARC TrenchPLUS standard level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 3 December 2003 Document order number: 9397 750 12163