PHILIPS BUK7L11

BUK7L11-34ARC
TrenchPLUS standard level FET
Rev. 03 — 3 December 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance, integral gate
resistor, ESD protection diodes and clamping diodes to protect the MOSFET from
avalanching.
1.2 Features
■ ESD and overvoltage protection
■ Internal gate resistor
■ Q101 compliant
■ On-state resistance 8 mΩ (typ).
1.3 Applications
■ 12 V loads
■ Motors, lamps and solenoids.
1.4 Quick reference data
■ VDSR(CL) = 41 V (typ)
■ ID ≤ 89 A
■ RDSon = 8 mΩ (typ)
■ Ptot ≤ 172 W.
2. Pinning information
Table 1:
Pinning - SOT78C, simplified outline and symbol
Pin
Description
1
gate (g)
2
drain (d)
3
source (s)
mb
mounting base,
connected to drain (d)
Simplified outline
Symbol
mb
d
g
s
1 2 3
MBL370
SOT78C (TO-220)
MBL521
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
3. Ordering information
Table 2:
Ordering information
Type number
Package
BUK7L11-34ARC
Name
Description
Version
TO-220
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads. SOT78C
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
drain-source voltage (DC)
VDGR
drain-gate voltage (DC)
Conditions
Min
Max
Unit
[1]
-
34
V
[1]
-
34
V
[1]
-
±20
V
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
[2]
-
89
A
[3]
-
75
A
Tmb = 100 °C; VGS = 10 V; Figure 2
[2]
-
63
A
-
358
A
RGS = 20 kΩ
gate-source voltage (DC)
VGS
drain current (DC)
ID
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
Ptot
total power dissipation
Tmb = 25 °C; Figure 1
-
172
W
IDG(CL)
drain-gate clamping current
tp = 5 ms; δ = 0.01
-
50
mA
IGS(CL)
gate-source clamping current
continuous
-
10
mA
tp = 5 ms; δ = 0.01
-
50
mA
Tstg
storage temperature
−55
+175
°C
Tj
junction temperature
−55
+175
°C
[2]
-
89
A
[3]
-
75
A
-
358
A
-
465
mJ
human body model; C = 100 pF;
R = 1.5 kΩ
-
8
kV
human body model; C = 250 pF;
R = 1.5 kΩ
-
6
kV
Source-drain diode
reverse drain current (DC)
IDR
IDRM
peak reverse drain current
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp ≤ 10 µs
Avalanche ruggedness
EDS(CL)S
non-repetitive drain-source clamped clamped inductive load; ID = 60 A;
energy
VDS ≤ 34 V; VGS = 10 V;
starting Tj = 25 °C
Electrostatic discharge
Vesd
[1]
[2]
[3]
electrostatic discharge voltage; all
pins
Voltage is limited by clamping.
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12163
Product data
Rev. 03 — 3 December 2003
2 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
03na19
120
03nj52
100
Capped at 75 A due to package
ID
(A)
Pder
(%)
75
80
50
40
25
0
0
0
50
100
150
200
Tmb (°C)
0
50
100
150
200
Tmb (°C)
VGS ≥ 10 V
P tot
P der = ----------------------- × 100%
P
°
tot ( 25 C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Continuous drain current as a function of
mounting base temperature.
03nj50
103
Limit RDSon = VDS / ID
ID
(A)
tp = 10 µ s
102
100 µ s
Capped at 75 A due to package
1 ms
DC
10
10 ms
100 ms
1
1
10
VDS (V)
102
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12163
Product data
Rev. 03 — 3 December 2003
3 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
5. Thermal characteristics
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from junction to
ambient
vertical in still air
-
60
-
K/W
Rth(j-mb)
thermal resistance from junction to
mounting base
Figure 4
-
0.55
0.87
K/W
5.1 Transient thermal impedance
03nj51
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10-1
0.1
0.05
0.02
10-2
δ=
P
single shot
tp
T
t
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12163
Product data
Rev. 03 — 3 December 2003
4 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
6. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DG
drain-gate zener breakdown
voltage
ID = 2 mA; VGS = 0 V
Tj = 25 °C
34
-
45
V
Tj = −55 °C
34
-
45
V
-
41
-
V
Tj = 25 °C
2.2
3
3.8
V
Tj = 175 °C
1.2
-
-
V
Tj = 150 °C
1.5
-
-
V
Tj = −55 °C
-
-
4.2
V
Tj = 25 °C
-
0.1
2
µA
Tj = 150 °C
-
3
50
µA
IGS(CL) = −2 mA; ID = 1 A
Figure 16 and 17
VDSR(CL)
drain-source clamping
voltage (DC)
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
drain-source leakage current
[1]
VDS = 16 V; VGS = 0 V
Tj = 175 °C
-
18
250
µA
20
22
-
V
Tj = 25 °C
-
5
1000
nA
Tj = 175 °C
-
-
50
µA
-
-
150
µA
Tj = 25 °C
-
8
11
mΩ
Tj = 175 °C
-
-
20.9
mΩ
7
9.7
mΩ
-
11
-
Ω
VGS = 10 V; VDS = 27 V;
ID = 25 A; Figure 14
-
53
-
nC
-
11
-
nC
-
20
-
nC
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
-
1880
2506
pF
-
640
768
pF
-
400
548
pF
V(BR)GSS
gate-source breakdown
voltage
IG = ±1 mA;
−55 °C < Tj < +175 °C
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
VGS = 16 V; VDS = 0 V
Tj = 175 °C
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 30 A;
Figure 7 and 8
VGS = 16 V; ID = 30 A
RG
Internal gate resistor
Dynamic characteristics
Qg(tot)
total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12163
Product data
Rev. 03 — 3 December 2003
5 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
Table 5:
Characteristics…continued
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
td(on)
turn-on delay time
-
20
-
nS
tr
rise time
VDS = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
-
92
-
nS
td(off)
turn-off delay time
-
127
-
nS
tf
fall time
Ld
internal drain inductance
internal source inductance
Ls
-
118
-
nS
measured from drain lead
6 mm from package to
center of die
-
4.5
-
nH
measured from contact
screw on mounting base to
center of die SOT78C
-
3.5
-
nH
measured from source lead
to source bond pad
-
7.5
-
nH
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 10 A; VGS = 0 V;
Figure 15
-
0.85
1.2
V
trr
reverse recovery time
-
52
-
ns
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs
VGS = −10 V; VDS = 30 V
-
28
-
nC
[1]
Independent testing of MOSFET and clamping diodes safeguards against avalanching.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12163
Product data
Rev. 03 — 3 December 2003
6 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
03nj47
400
Label is VGS (V)
ID
(A)
20
16
300
25
12
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
4
14
200
100
0
0
2
03nj46
30
RDSon
(mΩ)
4
20
15
10
5
6
8
10
VDS (V)
Tj = 25 °C; tp = 300 µs
5
10
15
20
VGS (V)
Tj = 25 °C; ID = 30 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03nj48
25
03aa27
2
Label is VGS (V)
RDSon
(mΩ)
5
6
7
8
a
10
20
1.5
15
1
10
0.5
20
5
0
0
100
200
300
ID (A)
400
Tj = 25 °C; tp = 300 µs
-60
60
120
Tj (°C)
180
R DSon
a = ---------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12163
Product data
0
Rev. 03 — 3 December 2003
7 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
03nh86
5
VGS(th)
ID
(A)
max
(V)
03nh87
10-1
10-2
4
typ
10-3
3
min
typ
max
min
10-4
2
10-5
1
10-6
0
-60
0
60
120
Tj (°C)
0
180
2
4
6
VGS (V)
Tj = 25 °C; VDS = VGS
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
03nj44
40
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03nj49
4000
C
(pF)
gfs
(S)
30
3000
20
2000
10
1000
C iss
C oss
C rss
0
0
0
20
40
60
80
10-1
1
Tj = 25 °C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12163
Product data
102
10
VDS (V)
ID (A)
Rev. 03 — 3 December 2003
8 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
03nj45
100
03nj43
10
VGS
(V)
8
ID
(A)
75
6
VDD = 14 V
50
VDD = 27 V
4
25
2
Tj = 175 °C
Tj = 25 °C
0
0
0
2
4
6
VGS (V)
8
0
20
40
60
QG (nC)
Tj = 25 °C; ID = 25 A
VDS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03nj42
100
IS
(A)
75
50
Tj = 175 °C
25
Tj = 25 °C
0
0.0
0.3
0.6
0.9
1.2
VSD (V)
VGS = 0 V
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12163
Product data
Rev. 03 — 3 December 2003
9 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
03nj59
42.0
VDSR(CL)
(V)
Tj = 175 °C
Tj = 25 °C
Tj = −55 °C
03nj58
43
VDSR(CL)
(V)
Tj = 175 °C
Tj = 25 °C
Tj = −55 °C
42
41.5
41
41.0
40
40.5
39
0
2
4
6
8
ID (A)
10
IGD = −2 mA
0
2
−IGS(CL) (mA)
3
ID = 10 A
Fig 16. Drain-source clamping voltage as a function of
drain current; typical values.
Fig 17. Drain-source clamping voltage as a function of
gate-source clamping current; typical values.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12163
Product data
1
Rev. 03 — 3 December 2003
10 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads
SOT78C
E
A
p
A1
mounting
base
q
D1
q1
D
q2
L1
L
Q
b1
1
2
3
b
c
e
e1
H
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
D1
E
e
e1
H
L
L1
p
Q
q
q1
q2
mm
4.58
4.31
1.33
1.21
0.87
0.76
1.33
1.21
0.44
0.33
15.07
14.80
6.47
6.22
10.40
10.00
2.64
2.44
5.16
5.00
6.03
5.76
14.00
13.50
6.10
5.58
3.90
3.78
2.72
2.40
2.95
2.69
3.80
3.42
12.40
12.00
Notes
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
SOT78C
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220
EUROPEAN
PROJECTION
ISSUE DATE
01-12-11
03-01-21
Fig 18. SOT78C (TO-220).
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12163
Product data
Rev. 03 — 3 December 2003
11 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
8. Revision history
Table 6:
Revision history
Rev Date
03
20031203
CPCN
Description
-
Product data (9397 750 12163)
•
02
20030522
-
Product data (9397 750 11472)
•
01
20030423
-
Avalanche Ruggedness parameter description in Section 4 changed from:
‘non-repetitive drain-source avalanche energy’ to ‘non-repetitive drain-source clamp
energy’.
Typical values of IDSS added to characteristics table, Section 6.
Product data (9397 750 11178)
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12163
Product data
Rev. 03 — 3 December 2003
12 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
9. Data sheet status
Level
Data sheet status[1]
Product status[2][3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Trademarks
— TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected].
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12163
Rev. 03 — 3 December 2003
13 of 14
Philips Semiconductors
BUK7L11-34ARC
TrenchPLUS standard level FET
Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
5.1
6
7
8
9
10
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
© Koninklijke Philips Electronics N.V. 2003.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 3 December 2003
Document order number: 9397 750 12163