Amplifier, Power, 1W 3.5-6.5 GHz MAAPGM0029-DIE 903240 — Preliminary Information Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage (4-10V) Operation ♦ MSAG™ Process Description The MAAPGM0029-Die is a 2-stage 1 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™) Process, each device is 100% RF tested on wafer to ensure performance compliance. Primary Applications ♦ Wireless Local Loop ♦ 3.7- 4.2 GHz SatCom M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, lownoise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, VGG = -2V, Pin = 16 dBm Parameter Symbol Typical Units Bandwidth f 3.5-6.5 GHz Output Power POUT 31 dBm Power Added Efficiency PAE 40 % 1-dB Compression Point P1dB 30 dBm Small Signal Gain G 20 dB Input VSWR VSWR 1.5:1 Gate Current IGG <4 mA Drain Current IDD < 400 mA Output Third Order Intercept OTOI 42 dBm Noise Figure NF 7 dB nd 2f -15 dBc rd 3f -25 dBc 2 Harmonic 3 Harmonic 1. TB = MMIC Base Temperature 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1W 3.5-6.5 GHz MAAPGM0029-DIE 903240 — Preliminary Information Maximum Operating Conditions 2 Parameter Symbol Absolute Maximum Units Input Power PIN 21.0 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF) IDQ 470 mA PDISS 3.1 W Junction Temperature Tj 180 °C Storage Temperature TSTG -55 to +150 °C Quiescent DC Power Dissipated (No RF) 2. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may result in performance outside the guaranteed limits. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit Drain Voltage VDD 4.0 8.0 10.0 V Gate Voltage VGG -2.3 -2.0 -1.5 V 16.0 Input Power PIN 19.0 dBm Junction Temperature Tj 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150°C— 25.5 ºC/W * VDD * IDQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8 V. 3. Adjust VGG to set IDQ, (approximately @ –2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn gate voltage off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 2 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1W 3.5-6.5 GHz MAAPGM0029-DIE 903240 — Preliminary Information 50 50 50 50 POUT PAE POUT PAE 40 40 40 40 30 30 30 30 20 20 20 20 10 10 10 10 0 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 4 7.0 5 6 7 8 9 10 Drain Voltage (V) Frequency (GHz) Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 5 GHz. Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 16dBm. 50 30 VDD = 4 VDD = 8 6 VDD = 6 VDD = 10 GAIN VSWR 40 25 5 30 20 4 20 15 3 10 10 2 5 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage 7.0 1 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 Frequency (GHz) Figure 4. Small Signal Gain and Input VSWR vs. Frequency at VDD = 8V. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1W 3.5-6.5 GHz MAAPGM0029-DIE 903240 — Preliminary Information Mechanical Information Chip Size: 2.980 x 1.980 x 0.075 mm (117x 78 x 3 mils) 2.980 mm. 1.490 mm. 0.127 mm. VDD 1.980 mm. 1.828 mm. OUT IN 0.990 mm. 0.990 mm. VGG 0.152 mm. 0 2.853 mm. 1.490 mm. 0 Figure 5. Die Layout Chip edge to bond pad dimensions are shown to the center of the bond pad. Bond Pad Dimensions Pad Size (μm) Size (mils) RF In and Out 100 x 200 4x8 DC Drain Supply Voltage VDD 200 x 150 8x6 DC Gate Supply Voltage VGG 150 x 150 6x6 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 4 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1W 3.5-6.5 GHz MAAPGM0029-DIE 903240 — Preliminary Information Assembly and Bonding Diagram VDD 0.1 μF 100 pF VDD RFIN RFOUT OUT IN VGG 100 pF VGG 0.1 μF Figure 6. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW test- Assembly Instructions: Die attach: Use AuSn (80/20) 1 mil preform solder. Limit time @ 300 °C to less than 5 minutes. Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.