2SC1627A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC1627A Driver-Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SA817A. • Driver-stage applications for 30- to 35-watt amplifiers. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 400 mA Base current IB 40 mA Collector power dissipation PC 800 mW Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range JEDEC TO-92MOD JEITA ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-5J1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.36 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SC1627A Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 100 nA IC = 5 mA 80 ― ― V VCE = 2 V, IC = 50 mA 70 ― 240 hFE (2) VCE = 2 V, IC = 200 mA 40 ― ― VCE (sat) IC = 200 mA, IB = 20 mA ― ― 0.4 V 0.55 ― 0.8 V VCE = 10 V, IC = 10 mA ― 100 ― MHz VCB = 10 V, f = 1 MHz ― 10 ― pF Collector-emitter breakdown voltage V (BR) CEO hFE (1) DC current gain Collector-emitter saturation voltage (Note) Base-emitter voltage VBE Transition frequency fT Collector output capacitance Cob VCE = 2 V, IC = 5 mA Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking C1627A Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SC1627A IC – VCE hFE – IC 1000 320 3.0 2.5 Common emitter Common emitter 500 Ta = 25°C 2.0 DC current gain hFE Collector current IC (mA) 3.5 240 1.5 160 1.0 VCE = 2 V 300 Ta = 100°C 25 −25 100 50 30 IB = 0.5 mA 80 10 1 3 10 100 Collector current IC 0 0 2 4 6 Collector-emitter voltage 300 (mA) 8 VCE (V) VCE (sat) – IC IC – VBE 1 300 Common emitter 0.5 Common emitter (mA) IC/IB = 10 0.3 Collector current IC Collector-emitter saturation voltage VCE (sat) (V) 30 Ta = 100°C 0.1 −25 0.05 25 0.03 0.01 1 3 10 30 Collector current IC 100 VCE = 2 V 250 200 150 Ta = 100°C 25 −25 100 50 300 (mA) 0 0 0.2 0.4 0.6 0.8 1.0 Base-emitter voltage 1.2 1.4 VBE (V) Safe Operating Area 1000 PC – Ta IC max (pulsed)* 1.2 1 ms* 10 ms* (W) IC max (continuous) 300 PC 100 ms* DC operation (Ta = 25°C) 100 Collector power dissipation Collector current IC (mA) 500 50 30 *: Single nonrepetitive pulse 10 5 Ta = 25°C Curves must be derated linearly with increase in temperature. 3 0.5 1 3 10 Collector-emitter voltage VCEO max 30 0.8 0.4 0 0 100 VCE (V) 40 80 120 160 200 Ambient temperature Ta (°C) 3 2006-11-09 2SC1627A RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2006-11-09