2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 1 A Base current IB 100 mA Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.5 10 W Tj 150 °C JEDEC ― Tstg −55 to 150 °C JEITA ― TOSHIBA 2-8H1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.82 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SC3421 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 120 V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 100 nA V (BR) CEO IC = 10 mA, IB = 0 120 ― ― V VCE = 5 V, IC = 100 mA 80 ― 240 VCE (sat) IC = 500 mA, IB = 50 mA ― 0.30 1.0 V Base-emitter voltage VBE VCE = 5 V, IC = 500 mA ― 0.78 1.0 V Transition frequency fT VCE = 5 V, IC = 100 mA ― 120 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 15 ― pF Collector-emitter breakdown voltage hFE DC current gain (Note) Collector-emitter saturation voltage Collector output capacitance Cob Note: hFE classification O: 80 to 160, Y: 120 to 240 Marking Lot No. Characteristics indicator C3421 Part No. (or abbreviation code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SC3421 IC – VCE hFE – IC 500 1200 Common emitter 16 (mA) Collector current IC DC current gain hFE 1000 Common emitter 300 Tc = 25°C 25 10 800 7 5 600 4 3 400 2 200 25 100 −25 50 30 10 3 6 4 8 Collector-emitter voltage 10 12 1000 (mA) VCE (V) VCE (sat) – IC IC – VBE 1000 Common emitter Common emitter 0.5 VCE = 5 V (mA) IC/IB = 10 0.3 Collector current IC Collector-emitter saturation voltage VCE (sat) (V) 300 14 1 Tc = 100°C 0.1 25 0.05 −25 0.03 0.01 100 Collector current IC 0 2 30 10 IB = 1 mA 0 0 VCE = 5 V Tc = 100°C 3 10 30 100 Collector current IC 300 800 600 Tc = 100°C 400 25 −25 200 1000 0 0 (mA) 0.2 0.4 0.6 0.8 Base-emitter voltage 1.0 1.2 VBE (V) Safe Operating Area 3000 IC max (pulsed)* PC – Ta (1) 8 6 4 0 0 100 ms* 300 DC operation Tc = 25°C 100 50 *: Single nonrepetitive pulse Tc = 25°C (2) 20 40 60 80 100 120 140 10 160 Ambient temperature Ta (°C) 10 ms* 500 30 2 1 ms* IC max (continuous)* 1000 (mA) 10 (1) Tc = Ta Infinite heat sink (2) No heat sink Collector current IC Collector power dissipation PC (W) 12 Curves must be derated linearly with increase in temperature 3 10 30 VCEO max 100 300 Collector-emitter voltage VCE (V) 3 2006-11-09 2SC3421 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2006-11-09