DATA SHEET MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch (mm) FEATURES .119(3.00) .110(2.80) .103(2.60) .047(1.20) • Collector current IC = 200mA • Pb free product are available : 99% Sn above can meet Rohs .056(1.40) • Collector-emitter voltage VCE = 40V environment substance directive request .083(2.10) .066(1.70) MECHANICAL DATA .086(2.20) .007(.20)MIN • NPN epitaxial silicon, planar design .006(.15) .002(.05) .006(.15)MAX .020(.50) .013(.35) Approx. Weight: 0.008 gram Marking: S1A .035(0.90) Terminals: Solderable per MIL-STD-202G, Method 208 .044(1.10) Case: SOT-23, Plastic 3 COLLECTOR Top View 3 Collector 1 BASE 1 Base 2 Emitter 2 EMITTER ABSOLUTE RATINGS PA R A M E TE R S ym bol Value U nits C ollector-E m itterVoltage V C EO 40 V C ollector-B ase Voltage V C BO 60 V E m itter-B ase Voltage V EBO 6.0 V IC 200 mA S ym bol Value U nits M ax P ow erD issipation (N ote 1) P TO T 225 mW Therm alR esistance ,Junction to A m bient RθJA 556 Junction Tem perature TJ -55 to 150 O C S torage Tem perature TISTG -55 to 150 O C C ollectorC urrent-C ontinuous THERMAL CHARACTERISTICS PA R A M E TE R O C /W Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. STAD-NOV.26.2004 PAGE . 1 ELECTRICAL CHARACTERISTICS TA=25oC PA RA M E TE R S ym b o l Te s t C o n d i t i o n M IN . T YP. MA X . U ni t s C o lle c to r - E mi tte r B re a k d o wn Vo lta g e V (B R) C E O IC = 1 . 0 m A , IB = 0 40 - - V C o lle c to r - B a s e B re a k d o wn Vo lta g e V (B R) C B O IC = 1 0 u A , IE = 0 60 - - V E mi tte r - B a s e B re a k d o wn Vo lta g e V (B R) E B O IE = 1 0 u A , IC = 0 6 .0 - - V B a s e C ut o f f C ur r e nt C o l l e c t o r C ut o f f C ur r e nt D C C ur r e nt G a i n ( N o t e 2 ) IB L V C E =3 0 V, V E B =3 .0 V - - 50 nA IC E X V C E =3 0 V, V E B =3 .0 V - - 50 nA hF E IC = 0 . 1 m A , V C E = 1 . 0 V IC = 1 . 0 m A , V C E = 1 . 0 V IC = 1 0 m A , V C E = 1 . 0 V IC = 5 0 m A , V C E = 1 . 0 V IC = 1 0 0 m A , V C E = 1 . 0 V 40 70 100 60 30 - 300 - - C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e (No te 2 ) V C E (S AT) IC = 1 0 m A , IB = 1 . 0 m A IC = 5 0 m A , IB = 5 . 0 m A - - 0 .2 0 .3 V B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e (No te 2 ) V B E (S AT) IC = 1 0 m A , IB = 1 . 0 m A IC = 5 0 m A , IB = 5 . 0 m A 0 .6 5 - - 0 .8 5 0 .9 5 V C o l l e c t o r - B a s e C a p a c i t a nc e C CBO V C B = 5 V , IE = 0 , f = 1 M H z - - 4 .0 pF E m i t t e r - B a s e C a p a c i t a nc e C EBO V C B = 0 . 5 V , IC = 0 , f = 1 M H z - - 8 .0 pF D e l a y Ti m e td V C C =3 V,V B E =-0 .5 V, IC = 1 0 m A , IB = 1 . 0 m A - - 35 ns R i s e Ti m e tr V C C =3 V,V B E =-0 .5 V, IC = 1 0 m A , IB = 1 . 0 m A - - 35 ns S t o r a g e Ti m e ts V C C = 3 V , IC = 1 0 m A IB 1 = IB 2 = 1 . 0 m A - - 200 ns F a l l Ti m e tf V C C = 3 V , IC = 1 0 m A IB 1 = IB 2 = 1 . 0 m A - - 50 ns Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +3V 300ns D u ty C y c le ~ 2 .0 % + 1 0 .9 V 275ȍ 0 -0 .5 V < 1ns C S* < 4 p F 10K ȍ D e la y a n d R is e T im e E q u iv a le n t T e s t C ir c u it 3V + 3V 2755ȍ ȍ 27 1 0 to 5 0 0 u s D u ty C yc le ~ 2 .0% + 10 .9 V 0 10K ȍ -9 .1 V < 1ns C SS** << 44pF pF C 1N916 S to ra g e a n d F a ll T im e E q u iv a le n t T e s t C irc u it STAD-NOV.26.2004 PAGE . 2 ELECTRICAL CHARACTERISTICS CURVE 300 1.400 VCE = 1V TJ = 150 ˚C 250 1.000 200 TJ = 100 ˚C TJ = 100 ˚C VBE (V) hFE 1.200 150 TJ = 25 ˚C 0.800 TJ = 25 ˚C 0.600 100 0.400 50 TJ = 150 0.200 0 VCE = 1V 0.000 0.01 0.1 1 10 100 1000 0.01 0.1 Collector Current, I C (mA) 1 10 100 1000 Collector Current, IC (mA) Fig. 1. Typical hFE vs Collector Current Fig. 2. Typical VBE vs Collector Current 1.0 1.000 TJ = 25 ˚C IC/IB = 10 TJ = 150 ˚C VBE(sat) (V) VCE(sat) (V) TJ = 100 ˚C 0.100 TJ = 25 ˚C TJ = 150 ˚C IC/IB = 10 0.1 0.010 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 Collector Current, I C (mA) Collector Current, I C (mA) Fig. 3. Typical VCE (sat) vs Collector Current Fig. 4. Typical VBE (sat) vs Collector Current 10 TJ = 25 ˚C Capacitance (pF) CIB (EB) COB (CB) 1 0.1 1 10 100 Reverse Voltage, VR (V) Fig. 5. Typical Capacitances vs Reverse Voltage STAD-NOV.26.2004 PAGE . 3 MOUNTING PAD LAYOUT Unit: inch (mm) 0.078(2.0) 0.035(0.9) SOT-23 0.031(0.8) 0.037(0.95) ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3.0K per 7" plastic Reel LEGAL STATEMENT IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified. Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. STAD-NOV.26.2004 PAGE . 4