SHD125246 SHD125246P SHD125246N SHD125246D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 922, REV. A HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Reverse Leakage Current Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Symbol VRWM IF(AV) Max. Average Forward Current IF(AV) Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current IFSM Thermal Resistance (per leg) R Thermal Resistance (per leg) Max. Junction Temperature Max. Storage Temperature R JC TJ Tstg Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) Max. Reverse Current (per leg) EAS IAR JC Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance (per leg) CT Max. Reverse Recovery Time trr Condition 50% duty cycle, rectangular wave form (single, doubler) 50% duty cycle, rectangular wave form (common cathode, common anode) 8.3 ms, half Sine wave (per leg) TJ = 25 C, IAS = 0.6 A, L = 40mH IAS decay linearly to 0 in 1 ms limited by TJ max VA=1.5VR (common cathode, common anode, doubler) (single rectifier) Condition @ 15A, Pulse, TJ = 25 C @ 15A, Pulse, TJ = 125 C @VR = 200V, Pulse, TJ = 25 C @VR = 200V, Pulse, TJ = 125 C @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) IF = 0.5 A, IR = 1.0 A, IRM = 0.25 A, TJ = 25 C Max. 200 15 Units V A 30 A 150 A 11.4 mJ 0.6 A 0.72 C/W 1.45 -65 to +200 -65 to +175 C/W C C Max. 1.01 0.85 0.35 Units V V mA 8.0 mA 300 pF 33 nsec 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586-7600 Fax (631) 242-9798 World Wide Web Site - http://www.sensitron.com E-Mail Address - [email protected] SHD125246 SHD125246P SHD125246N SHD125246D TECHNICAL DATA DATA SHEET 922, REV.Mechanical Dimensions: In Inches / mm .149 (3.78 Dia. .139 3.53) .545 (13.84 .535 13.60) (6.60 6.32) (1.27 1.02) 1 .800 (20.32 .790 20.07) .545 (13.84 .535 13.58) .685 (17.40 .665 16.89) 1.235 (31.37 1.195 30.35) .260 .249 .050 .040 SINGLE 1 2 2 3 1 COMMON ANODE 2 3 DOUBLER 3 1 .045 (1.14 .035 0.89) 3 Places COMMON CATHODE .150(3.81) BSC 2 Places .150(3.81) BSC PINOUT TABLE TYPE SINGLE RECTIFIER DUAL RECTIFIER, COMMON CATHODE (P) DUAL RECTIFIER, COMMON ANODE (N) DUAL RECTIFIER, DOUBLER (D) Curves shown are for bare die only. 2 3 3 2 1 TO-254 PIN 1 CATHODE ANODE 1 CATHODE 1 ANODE PIN 2 ANODE COMMON CATHODE COMMON ANODE ANODE/CATHODE PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE Typical Reverse Characteristics Typical Forward Characteristics Instantaneous Reverse Current - I R (mA) 101 101 175 °C 100 175 °C 150 °C 10-1 125 °C 10-2 100 °C 75 °C 10-3 50 °C 10-4 25 °C 10-5 125 °C 0 40 -1 10 80 120 160 200 Reverse Voltage - VR (V) 240 Typical Junction Capacitance Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 200 °C 200 °C 100 25 °C 10-2 0.0 0.2 0.4 0.6 0.8 Forward Voltage Drop - VF (V) 1.0 300 240 180 120 60 0 0 40 80 120 160 Reverse Voltage - VR (V) 200 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586-7600 Fax (631) 242-9798 World Wide Web Site - http://www.sensitron.com E-Mail Address - [email protected] 240 SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. 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