Order this document by TIP110/D SEMICONDUCTOR TECHNICAL DATA ! "# !$ ! . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc VCEO(sus) = 60 Vdc (Min) — TIP110, TIP115 VCEO(sus) = 80 Vdc (Min) — TIP111, TIP116 VCEO(sus) = 100 Vdc (Min) — TIP112, TIP117 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors • TO–220AB Compact Package ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Symbol TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 Unit VCEO 60 80 100 Vdc Collector–Base Voltage VCB 60 80 100 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous Peak IC 2.0 4.0 Adc Base Current IB 50 mAdc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 50 0.4 Watts W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 Watts W/_C Unclamped Inductive Load Energy — Figure 13 E 25 mJ TJ, Tstg – 65 to + 150 _C Rating Collector–Emitter Voltage Operating and Storage Junction *Motorola Preferred Device DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 – 100 VOLTS 50 WATTS THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristics RθJC 2.5 _C/W Thermal Resistance, Junction to Ambient RθJA 62.5 _C/W CASE 221A–06 TO–220AB PD, POWER DISSIPATION (WATTS) TA TC 3.0 60 2.0 40 TC 1.0 20 TA 0 0 0 20 40 60 80 100 T, TEMPERATURE (°C) 120 140 160 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 60 80 100 — — — — — — 2.0 2.0 2.0 — — — 1.0 1.0 1.0 — 2.0 1000 500 — — Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) VCEO(sus) TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) TIP110, TIP115 TIP111, TIP116 TIP112 ,TIP117 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 Vdc ICEO mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 2.0 Adc, VCE = 4.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) VCE(sat) — 2.5 Vdc Base–Emitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc) VBE(on) — 2.8 Vdc hfe 25 — — — — 200 100 DYNAMIC CHARACTERISTICS Small–Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) (1) Pulse Test: Pulse Width Cob TIP115, TIP116, TIP117 TIP110, TIP111, TIP112 300 µs, Duty Cycle pF 2%. 4.0 V CC RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS – 30 V D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA RC SCOPE MSD6100 USED BELOW IB ≈ 100 mA ts VCC = 30 V IB1 = IB2 IC/IB = 250 TJ = 25°C 2.0 RB 51 0 V1 approx –12 V D1 ≈ 8.0 k ≈ 60 + 4.0 V 25 µs tr, tf ≤ 10 ns DUTY CYCLE = 1.0% for td and tr, D1 is disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. For NPN test circuit, reverse diode, polarities and input pulses. Figure 2. Switching Times Test Circuit 2 t, TIME ( µs) TUT V2 approx + 8.0 V tf 1.0 0.8 tr 0.6 0.4 0.2 0.04 0.06 PNP NPN 0.1 td @ VBE(off) = 0 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 Figure 3. Switching Times Motorola Bipolar Power Transistor Device Data 4.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 P(pk) ZθJC(t) = r(t) RθJC RθJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) – TC = P(pk) ZθJC(t) DUTY CYCLE, D = t1/t2 0.05 0.07 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k Figure 4. Thermal Response ACTIVE–REGION SAFE–OPERATING AREA 10 4.0 1 ms 5 ms 2.0 1.0 0.1 1.0 TJ = 150°C dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECONDARY BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO TIP115 TIP116 TIP117 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 10 4.0 2.0 TIP110 TIP111 TIP112 CURVES APPLY BELOW RATED VCEO 0.1 1.0 40 60 80 100 10 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) TJ = 150°C dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECONDARY BREAKDOWN LIMITED 1.0 60 80 100 10 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 5. TIP115, 116, 117 Figure 6. TIP110, 111, 112 200 TC = 25°C C, CAPACITANCE (pF) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on T J(pk) = 150_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 70 50 Cob 30 Cib 20 PNP NPN 10 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3 NPN TIP110, 111, 112 PNP TIP115, 116, 117 6.0 k 6.0 k TJ = 125°C 3.0 k 25°C 2.0 k – 55°C 1.0 k 800 600 400 300 0.04 0.06 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 3.0 k 25°C 2.0 k – 55°C 1.0 k 800 600 400 300 0.04 0.06 4.0 2.0 VCE = 3.0 V TJ = 125°C 4.0 k hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 4.0 k VCE = 3.0 V 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 3.4 3.0 TJ = 25°C IC = 0.5 A 1.0 A 4.0 A 2.0 A 2.6 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 50 20 100 3.4 TJ = 25°C 3.0 2.6 IC = 0.5 A 1.0 A 2.0 A 4.0 A 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 20 50 100 Figure 9. Collector Saturation Region 2.2 2.2 TJ = 25°C TJ = 25°C 1.8 1.4 VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.6 0.2 0.04 0.06 VBE(sat) @ IC/IB = 250 1.4 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages 4 Motorola Bipolar Power Transistor Device Data 4.0 + 0.8 PNP TIP115, 116, 117 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) NPN TIP110, 111, 112 *APPLIES FOR IC/IB ≤ hFE/3 0 – 0.8 – 1.6 25°C to 150°C * θVC for VCE(sat) – 2.4 – 55°C to 25°C 25°C to 150°C – 3.2 θVC for VBE – 55°C to 25°C – 4.0 – 4.8 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 + 0.8 *APPLIES FOR IC/IB ≤ hFE/3 0 – 0.8 25°C to 150°C * θVC for VCE(sat) – 1.6 – 55°C to 25°C – 2.4 25°C to 150°C – 3.2 θVC for VBE – 4.0 – 4.8 0.04 0.06 – 55°C to 25°C 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 11. Temperature Coefficients 105 REVERSE 104 103 REVERSE FORWARD IC, COLLECTOR CURRENT ( µA) IC, COLLECTOR CURRENT ( µA) 105 VCE = 30 V 102 TJ = 150°C 101 100 100°C 25°C 10–1 – 0.6 – 0.4 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4 FORWARD 104 103 VCE = 30 V 102 101 TJ = 150°C 100 100°C 25°C 10–1 – 0.6 – 0.4 – 0.2 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut-Off Region TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS tw ≈ 3.5 ms (SEE NOTE A) VCE MONITOR MJE254 INPUT 50 Ω TUT + – VBB2 = 0 100 ms + VCC = 20 V – IC MONITOR RBB2 100 Ω 50 Ω –5 V 100 mH RBB1 2 kΩ VBB1 = 10 V 0V INPUT VOLTAGE COLLECTOR CURRENT RS = 0.1 Ω 0.71 A 0V VCER COLLECTOR VOLTAGE Note A: Input pulse width is increased until ICM = 0.71 A, NPN test shown; for PNP test reverse all polarity and use MJE224 driver. 20 V VCE(sat) Figure 13. Inductive Load Switching Motorola Bipolar Power Transistor Device Data 5 PACKAGE DIMENSIONS –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A–06 TO–220AB ISSUE Y Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Bipolar Power Transistor Device Data *TIP110/D* TIP110/D