Order this document by BD787/D SEMICONDUCTOR TECHNICAL DATA . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage — VCEO(sus) 60 Vdc (Min) — BD787, BD788 • High Current–Gain — Bandwidth Product — fT = 50 MHz (Min) @ IC = 100 mAdc • Collector–Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD787 BD788 Unit Collector–Emitter Voltage VCEO 60 Vdc Collector–Base Voltage VCBO 80 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continous — Peak IC 4.0 8.0 Adc Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25°C Derate Above 25_C PD 15 0.12 Watts W/_C TJ, Tstg – 65 to + 150 _C Symbol Max Unit RθJC 8.34 _C/W Rating Operating and Storage Junction Temperature Range CASE 77–08 TO–225AA TYPE THERMAL CHARACTERISTICS Characteristic 16 1.6 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 80 100 120 140 TA PD, POWER DISSIPATION (WATTS) TC PD, POWER DISSIPATION (WATTS) Thermal Resistance, Junction to Case 0 160 T, TEMPERATURE (°C) Figure 1. Power Derating REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 — Vdc Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) ICEO — 100 µAdc Collector Cutoff Current (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125°C) ICEX — — 1.0 0.1 µAdc mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO — 1.0 µAdc 40 25 20 5.0 250 — — — — — — — 0.4 0.6 0.8 2.5 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0) ON CHARACTERISTICS(1) DC Current Gain (IC = 200 mAdc, VCE = 3.0 Vdc) (IC = 1.0 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) (IC = 2.0 Adc, IB = 200 mAdc) (IC = 4.0 Adc, IB = 800 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) VBE(sat) — 2.0 Vdc Base–Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc) VBE(on) — 1.8 Vdc fT 50 — MHz — — 50 70 10 — DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz) Output Capacitance (VCB = 10 Vdc, IC = 0) (f = 0.1 MHz) Cob BD787 BD788 Small–Signal Current Gain (IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz) * Indicates JEDEC Registered Data (1) Pulse Test; Pulse Width 300 µs, Duty Cycle v hfe 500 300 RC + 11 V VCC = 30 V IC/IB = 10 TJ = 25°C 200 SCOPE – 9.0 V v tr, tf 10 ns DUTY CYCLE = 1.0% 51 D1 –4V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES. [ [ Figure 2. Switching Time Test Circuit 2 t, TIME (ns) 100 RB 0 — v 2.0%. + 30 V VCC 25 µs pF tr 70 50 30 20 td @ VBE(off) = 5.0 V 10 7.0 5.0 0.04 0.06 BD787 (NPN) BD788 (PNP) 0.1 1.0 0.2 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 Figure 3. Turn–On Time Motorola Bipolar Power Transistor Device Data 4.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 P(pk) 0.05 0.1 0.07 0.05 0.02 t1 0.01 0.03 0.02 0 (SINGLE PULSE) 0.01 0.02 0.05 0.1 t2 DUTY CYCLE, D = t1/t2 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 10 RθJC(t) = r(t) RθJC RθJC = 8.34°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 20 50 100 200 Figure 4. Thermal Response 10 100 µs IC, COLLECTOR CURRENT (AMP) 1.0 ms 5.0 500 µs 5.0 ms 2.0 0.1 0.05 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.02 0.01 1.0 dc TJ = 150°C 1.0 0.5 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C: TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C, T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v BD787 (NPN) BD788 (PNP) 60 V 2.0 3.0 5.0 7.0 10 50 70 100 20 30 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area 200 2000 ts t, TIME (ns) 700 500 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C TJ = 25°C 100 C, CAPACITANCE (pF) 1000 300 200 100 70 tf 50 30 20 0.04 0.06 Cib 70 50 30 Cob 20 (NPN) (PNP) 0.1 0.4 0.6 0.2 1.0 IC, COLLECTOR CURRENT (AMP) Figure 6. Turn–Off Time Motorola Bipolar Power Transistor Device Data (NPN) (PNP) 2.0 4.0 10 1.0 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 70 100 Figure 7. Capacitance 3 NPN BD787 NPN BD788 400 200 VCE = 1.0 V VCE = 3.0 V TJ = 150°C 200 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 300 25°C – 55°C 100 70 50 VCE = 1.0 V VCE = 3.0 V TJ = 150°C 100 25°C 70 50 – 55°C 30 20 30 20 0.04 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 10 0.04 0.06 4.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 2.0 4.0 2.0 4.0 Figure 8. DC Current Gain 2.0 2.0 TJ = 25°C TJ = 25°C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 3.0 V 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 3.0 V 0.4 0.4 VCE(sat) @ IC/IB = 10 0 0.04 0.06 0.2 0.1 0.6 0.4 1.0 2.0 VCE(sat) @ IC/IB = 10 0 0.04 0.06 0.1 0.2 4.0 IC, COLLECTOR CURRENT (AMP) 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) + 2.5 + 2.0 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 9. “On” Voltages *APPLIES FOR IC/IB ≤ hFE/3 + 1.5 + 1.0 + 0.5 *θVC FOR VCE(sat) 25°C to 150°C 0 – 55°C to 25°C – 0.5 – 1.0 – 1.5 25°C to 150°C θVB FOR VBE – 2.0 – 2.5 0.04 0.06 – 55°C to 25°C 0.1 0.2 0.4 0.6 1.0 2.0 4.0 + 2.5 + 2.0 *APPLIES FOR IC/IB ≤ hFE/3 + 1.5 + 1.0 + 0.5 *θVC FOR VCE(sat) 0 25°C to 150°C – 55°C to 25°C – 0.5 – 1.0 – 1.5 25°C to 150°C θVB FOR VBE – 55°C to 25°C – 2.0 – 2.5 0.04 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. Temperature Coefficients 4 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS –B– U F Q –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 ––– MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ––– STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77–08 TO–225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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