High Power GaAs SPDT Switch DC - 2.5 GHz SW-279 V2.00 Features • • • • • • • SO-8 +36 dBm Typ. 1 dB Compression Point, -8V Supply +65 dBm Typ. 3rd Order Intercept Point, -8V Supply Low Insertion Loss: 0.4 dB Typical Low Power Consumption: 100 µW Fast Switching Speed Low Cost SOIC8 Plastic Package Tape and Reel Packaging Available1 PIN 8 Orientation mark PIN 1 .1890-.1968 (4.80-5.00) -A- .0532-.0688 (1.35-1.75) 0°-8° -C- .004 (0.10) .0040-.0098 (0.10-0.25) Description The SW-279 is fabricated with a monolithic GaAs MMIC using a mature 1 micron process. The process features full chip passivation for increased performance and reliability. .016-.050 (0.40-1.27) .0075-0.0098 (0.19-0.25) 8- Lead SOP outline dimensions Narrow body .150 (All dimensions per JEDEC No. MS-012-AA, Issue C) Dimensions in ( ) are in mm. Unless Otherwise Noted: .xxx = ± 0.010 (.xx = ± 0.25) .xx = ± 0.02 (.x = ±0.5) Ordering Information Model No. SW-279 PIN SW-279TR SW-279RTR Test Conditions2 Insertion Loss 10% to 90% RF, 90% to 10% RF 50% Control to 90% RF, 50% Control to 10% RF In Band Input Power (5V Supply/Control) Input Power (8V Supply/Control) Measured Relative (5V Supply/Control) to Input Power (8V Supply/Control) (for two-tone input power up to +10 dBm) Package SOIC 8 Lead Forward Tape & Reel Reverse Tape & Reel Unit DC – 2.0 GHz DC – 1.0 GHz DC – 0.5 GHz DC – 0.1 GHz DC – 2.0 GHz DC – 1.0 GHz DC – 0.5 GHz DC – 0.1 GHz DC – 2.0 GHz Isolation VSWR Trise, Tfall Ton, Toff Transients One dB Compression Point 3rd Order Intercept .0099-0.0196 x 45° Chamfer (0.25-0.50) .010(0.25) M C A M B S Electrical Specifications, TA = +25°C Parameter .013-.020 TYP. (0.33-0.51) .050(1.27) BSC. M/A-COM’s SW-279 is a GaAs MMIC SPDT switch in a low cost SOIC 8-lead surface mount plastic package. The SW-279 is ideally suited for use where very low power consumption is required. Typical applications include transmit/receive switching, switch matrices, and filter banks in systems such as: radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered radio equipment. .2284-.2440 (5.80-6.20) .010(0.25) M B M .1497-.1574 (3.80-4.00) -B- 0.9 GHz 0.9 GHz 0.9 GHz 0.9 GHz dB dB dB dB dB dB dB dB Min. 14 28 35 35 nS nS mV dBm dBm dBm dBm Typ. Max 0.6 0.4 0.35 0.2 16 32 38 38 1.2:1 30 35 12 33 35.8 61 65 0.8 0.6 0.5 0.4 1. Refer to “Tape and Reel Packaging” Section, or contact factory. 2. All specifications apply when operated with bias voltages of 0V for Vin Low and 5 to 10V for Vin Hi, and 50 Ohm impedance at all RF ports, unless otherwise specified. High power (greater than 1W) handling specifications apply to cold switches only. For input powers under 1W, hot switching can be used. The high control voltage must be within +/- 0.2V of the supply voltage. The RF ports must be blocked outside of the package from ground or any other voltage. Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: 1 Tel. (800) 366-2266 Fax (800) 618-8883 ■ Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 ■ Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 High Power GaAs SPDT Switch SW-279 V2.00 Absolute Maximum Ratings Two Tone IP3 Measurements Absolute Maximum1 Parameter Max. Input Power 0.5 – 2.0 GHz 5V Control and Supply 8V Control and Supply 10V Control and Supply Power Dissipation Control Voltage Operating Temperature Storage Temperature Bias Voltage Input Power (dBm) 3rd Order Intermodulation Products (dBC) 0,-5V +27 -34 +44 -61 0,-6V +27 -49 +51 -61 0,-7V +27 -64 +59 -63 0,-8V +27 -65 +59 -63 0,-10V +27 -66 +60 -63 0,-5V +28 -30 +43 -58 0,-6V +28 -41 +48.5 -58 0,-7V +28 -52 +54 -57 +37 dBm +40 dBm +42 dBm 1.0 W -12V, +1V -40°C to +85°C -65°C to +150°C Thermal Resistance2: θjc = 87 °C/W 0,-8V +28 -60 +58 -57 0,-10V +28 -60 +58 -57 0,-5V +29 -28 +43 -54 0,-6V +29 -34 +46 -54 0,-7V +29 -44 +51 -54 0,-8V +29 -52 +55 -54 0,-10V +29 -52 +55 -54 0,-5V +30 -26 +43 -52 0,-6V +30 -32 +46 -51 0,-7V +30 -38 +49 -51 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Thermal resistance is given for TA = 25°C. TCASE is the temperature of leads 1 and 4. Pin Configuration Functional Schematic A B RF2 Second IP3 Harmonic (dBm) (dBc) RF1 Pin No. Description 1 GND, Thermal Contact 2 GND 0,-8V +30 -44 +52 -51 3 RF Common 0,-10V +30 -44 +52 -51 4 GND, Thermal Contact 5 RF1 6 A 7 B 8 RF2 8 7 6 5 Truth Table Control Inputs1 1 3 2 4 A 1 0 GND GND RFC GND Thermal Thermal Contact Contact ISOLATION FREQUENCY ISOLATION vs.VS FREQUENCY RF1 On Off RF2 Off On ISERTION LOSSLOSS VS FREQUENCY INSERTION vs. FREQUENCY 70 60 1.0 LOSS (dB) ISOLATION (dB) B 0 1 1. 0 – 0 to -0.2V @ 20 µA max. 1 – -5V @ 50 µA Typ to -10V @ 800 µA max. Typical Performance 50 40 30 .75 +85°C 0.5 +25°C 20 0.25 10 0 0 0.5 2.0 1.0 1.5 FREQUENCY (GHz) 2.5 0 VSWR VSFREQUENCY FREQUENCY VSWR vs. COMPRESSION (dBm) 1.3 1.2 1.1 0 0.5 2.0 1.0 1.5 FREQUENCY (GHz) 0.5 2.0 1.5 1.0 FREQUENCY (GHz) 2.5 COMPRESSION VS vs. CONTROL (900 MHZ) COMPRESSION CONTROL VOLTAGE VOLTAGE (900 MHz) 1.4 1.0 -40°C 0 1.5 VSWR Condition of Switch RF Common to Each RF Port 40 1.0 dB Compression 35 30 25 20 15 10 -3.0 -4.0 2.5 0.1 dB Compression -5.0 -6.0 -7.0 -8.0 -9.0 -10.0 CONTROL VOLTAGE (Volts) Specifications Subject to Change Without Notice. M/A-COM, Inc. 2 North America: Tel. (800) 366-2266 Fax (800) 618-8883 ■ Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 ■ Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020