IPB085N06L G OptiMOS™ Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS(on),max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPB085N06L G Type IPP085N06L G Package Marking IPB085N06L G Package P-TO263-3-2 P-TO263-3-2 P-TO220-3-1 085N06L IPP085N06L G Marking 085N06L P-TO220-3-1 085N06L 085N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C1) 80 T C=100 °C 76 Pulsed drain current I D,pulse T C=25 °C2) 320 Avalanche energy, single pulse E AS I D=80 A, R GS=25 Ω 370 Reverse diode dv /dt dv /dt I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 A mJ kV/µs ±20 V 188 W -55 ... 175 °C 55/175/56 1) Current is limited by bondwire; with an R thJC=0.8 K/W the chip is able to carry 97 A. 2) See figure 3 Rev. 1.05 Unit page 1 2010-01-19 IPB085N06L G Parameter IPP085N06L G Values Symbol Conditions Unit min. typ. max. - - 0.8 minimal footprint - - 62 6 cm2 cooling area3) - - 40 60 - - Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=125 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=60 V, V GS=0 V, T j=125 °C - 1 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=60 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=80 A - 7.0 8.5 mΩ V GS=4.5 V, I D=53 A - 8.7 12 V GS=10 V, I D=80 A, SMD version 6.7 8.2 V GS=4.5 V, I D=53 A, SMD version 8.4 11.7 - 2.3 - Ω 54 107 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=80 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.05 page 2 2010-01-19 IPB085N06L G Parameter IPP085N06L G Values Symbol Conditions Unit min. typ. max. - 2600 3500 - 620 820 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 150 225 Turn-on delay time t d(on) - 10 15 Rise time tr - 19 28 Turn-off delay time t d(off) - 53 80 Fall time tf - 18 27 Gate to source charge Q gs - 10 13 Gate charge at threshold Q g(th) - 4 6 Gate to drain charge Q gd - 26 39 Switching charge Q sw - 32 47 Gate charge total Qg - 78 104 Gate plateau voltage V plateau - 3.8 - Output charge Q oss - 24 32 - - 80 - - 320 - 0.97 1.3 V - 57 70 ns - 70 90 nC V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=80 A, R G=2.3 Ω pF ns Gate Charge Characteristics 4) V DD=30 V, I D=80 A, V GS=0 to 10 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs A See figure 16 for gate charge parameter definition Rev. 1.05 page 3 2010-01-19 IPB085N06L G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 200 90 180 80 160 IPP085N06L G 70 140 60 I D [A] P tot [W] 120 100 50 40 80 30 60 20 40 10 20 0 0 0 50 100 150 0 200 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 100 1 µs limited by on-state resistance 10 µs 0.5 100 µs 102 1 ms 0.2 Z thJC [K/W] I D [A] DC 10 ms 101 10-1 0.1 0.05 0.02 0.01 100 10-1 10 10-2 -1 10 0 10 1 10 2 V DS [V] Rev. 1.05 single pulse 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2010-01-19 IPB085N06L G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS IPP085N06L G 20 300 10 V 3V 5.5 V 250 3.5 V 4V 4.5 V 5V 15 R DS(on) [mΩ] I D [A] 200 4.5 V 150 10 5V 5.5 V 10 V 4V 100 5 3.5 V 50 3V 0 0 0 1 2 3 4 0 5 40 80 V DS [V] 120 160 200 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 150 80 100 I D [A] g fs [S] 120 40 50 25 °C 175 °C 0 0 0 1 2 3 4 5 Rev. 1.05 0 20 40 60 80 100 120 140 I D [A] V GS [V] page 5 2010-01-19 IPB085N06L G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=80 A; V GS=10 V V GS(th)=f(T j); V GS=V DS IPP085N06L G parameter: I D 25 3 2.5 20 V GS(th) [V] R DS(on) [mΩ] 2 15 98 % 10 typ 1250 µA 1.5 125 µA 1 5 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 102 103 175 °C 175°C 98% 25 °C I F [A] C [pF] Coss 25°C 98% 101 Crss 102 100 101 10-1 0 10 20 30 40 50 V DS [V] Rev. 1.05 0 0.5 1 1.5 2 V SD [V] page 6 2010-01-19 IPB085N06L G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=80 A pulsed parameter: T j(start) parameter: V DD 102 IPP085N06L G 12 100 °C 25 °C 30 V 10 12V 48 V 150 °C V GS [V] I AV [A] 8 101 6 4 2 100 0 100 101 102 103 0 20 t AV [µs] 40 60 80 100 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 75 V GS Qg V BR(DSS) [V] 70 65 V g s(th) 60 55 Q g(th) Q sw Q gs 50 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.05 page 7 2010-01-19 IPB085N06L G IPP085N06L G PG-TO-263 (D²-Pak) Rev. 1.05 page 8 2010-01-19 IPB085N06L G IPP085N06L G PG-TO220-3: Outline Rev. 1.05 page 9 2010-01-19 IPB085N06L G IPP085N06L G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.05 page 10 2010-01-19