IPA030N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) 100 V R DS(on),max 3 mΩ ID 79 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPA030N10N3 G Package PG-TO220-FP Marking 030N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 79 T C=100 °C 56 Unit A Pulsed drain current2) I D,pulse T C=25 °C 316 Avalanche energy, single pulse E AS I D=79 A, R GS=25 Ω 1000 mJ Gate source voltage V GS ±20 V Power dissipation P tot 41 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) 2) Rev. 2.1 55/175/56 J-STD20 and JESD22 See figure 3 page 1 2009-07-09 IPA030N10N3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 3.7 100 - - Thermal characteristics Thermal resistance, junction - case R thJC K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=270 µA 2 2.7 3.5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=79 A - 2.6 3 mΩ V GS=6 V, I D=40 A - 3 4.8 - 1.9 - Ω 86 171 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=79 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.1 page 2 2009-07-09 IPA030N10N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 11100 14800 pF - 1940 2580 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 69 - Turn-on delay time t d(on) - 42 - Rise time tr - 38 - Turn-off delay time t d(off) - 112 - Fall time tf - 37 - Gate to source charge Q gs - 47 - Gate to drain charge Q gd - 27 - - 41 - V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=79 A, R G=1.6 Ω ns Gate Charge Characteristics 4) V DD=50 V, I D=79 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 155 206 Gate plateau voltage V plateau - 4.2 - Output charge Q oss - 205 273 nC - - 70 A - - 316 - 0.9 1.2 V - 80 - ns - 190 - nC V DD=50 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) Rev. 2.1 T C=25 °C V GS=0 V, I F=79 A, T j=25 °C V R=50 V, I F=25 A, di F/dt =100 A/µs See figure 16 for gate charge parameter definition page 3 2009-07-09 IPA030N10N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 50 80 70 40 60 50 I D [A] P tot [W] 30 20 40 30 20 10 10 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 1 µs 100 µs 10 µs 0.5 102 100 101 Z thJC [K/W] I D [A] 1 ms 10 ms DC 10 0.2 0.1 0.05 10-1 0.02 0 0.01 single pulse 10 -1 10-1 10 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100 101 t p [s] V DS [V] Rev. 2.1 -2 page 4 2009-07-09 IPA030N10N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 250 6 7.5 V 10 V 5V 5.5 V 5 200 4.5 V 4 I D [A] R DS(on) [mΩ] 150 4.5 V 100 5V 6V 3 7.5 V 10 V 2 50 1 0 0 0 1 2 3 0 20 40 V DS [V] 60 80 100 80 100 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 200 200 160 150 120 I D [A] g fs [S] 250 100 80 25 °C 175 °C 50 40 0 0 0 2 4 6 8 Rev. 2.1 0 20 40 60 I D [A] V GS [V] page 5 2009-07-09 IPA030N10N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=79 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 7 4 6 3.5 3 2700 µA 2.5 4 V GS(th) [V] R DS(on) [mΩ] 5 98 % 3 typ 270 µA 2 1.5 2 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 103 Ciss 104 102 10 25 °C I F [A] C [pF] Coss 3 25 °C, 98% 101 Crss 102 101 100 0 20 40 60 80 V DS [V] Rev. 2.1 175 °C, 98% 175 °C 0 0.5 1 1.5 2 V SD [V] page 6 2009-07-09 IPA030N10N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=79 A pulsed parameter: T j(start) parameter: V DD 100 10 25 °C 8 100 °C 80 V 150 °C 50 V V GS [V] I AS [A] 6 10 20 V 4 2 1 0 1 10 100 1000 0 40 80 120 160 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 110 V GS Qg V BR(DSS) [V] 105 100 V g s(th) 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.1 page 7 2009-07-09 IPA030N10N3 G PG-TO220-FP Rev. 2.1 page 8 2009-07-09 IPA030N10N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 9 2009-07-09