IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS®2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G Package PG-TO263-3 PG-TO262-3 PG-TO220-3 Marking 06CNE8N 06CNE8N 06CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 100 T C=100 °C 88 Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω 480 Reverse diode dv /dt dv /dt I D=100 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C 6 Gate source voltage4) V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.01 Unit A mJ kV/µs ±20 V 214 W -55 ... 175 °C 55/175/56 page 1 2006-02-14 IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G Parameter Values Symbol Conditions Unit min. typ. max. - - 0.7 minimal footprint - - 62 6 cm2 cooling area5) - - 40 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 85 - - Gate threshold voltage V GS(th) V DS=V GS, I D=180 µA 2 3 4 Zero gate voltage drain current I DSS V DS=68 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=68 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A, TO220, TO262 - 5.0 6.5 mΩ V GS=10 V, I D=100 A, TO263 - 4.7 6.2 - 1.6 - Ω 67 134 - S Gate resistance RG Transconductance g fs 1) |V DS|>2|I D|R DS(on)max, I D=100 A J-STD20 and JESD22 2) Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 124 A. 3) See figure 3 4) Tjmax=150 °C and duty cycle D=0.01 for V gs<-5V 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.01 page 2 2006-02-14 IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G Parameter Values Symbol Conditions Unit min. typ. max. - 6950 9240 - 1310 1740 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 89 134 Turn-on delay time t d(on) - 17 26 Rise time tr - 27 40 Turn-off delay time t d(off) - 26 39 Fall time tf - 7 10 Gate to source charge Q gs - 37 49 Gate to drain charge Q gd - 24 36 Switching charge Q sw - 40 57 Gate charge total Qg - 103 138 Gate plateau voltage V plateau - 5.3 - Output charge Q oss - 99 132 nC - - 100 A - - 400 - 1 1.2 - 110 - 280 V GS=0 V, V DS=40 V, f =1 MHz V DD=40 V, V GS=10 V, I D=50 A, R G=1.6 Ω pF ns Gate Charge Characteristics6) V DD=40 V, I D=100 A, V GS=0 to 10 V V DD=40 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 6) T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=40 V, I F=I S, di F/dt =100 A/µs V ns - nC See figure 16 for gate charge parameter definition Rev. 1.01 page 3 2006-02-14 IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 120 250 100 200 80 I D [A] P tot [W] 150 60 100 40 50 20 0 0 0 50 100 150 0 200 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 100 1 µs 0.5 10 µs 102 100 µs 0.2 -1 1 ms 10 0.1 Z thJC [K/W] I D [A] DC 10 ms 1 10 0.05 0.02 0.01 single pulse -2 10 0 10 10-1 10-3 -1 10 0 1 10 10 2 10 V DS [V] Rev. 1.01 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2006-02-14 IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 400 15 8V 7V 4.5 V 10 V 320 12 5V 6.5 V R DS(on) [mΩ] I D [A] 240 6V 160 9 5.5 V 6V 6 10 V 5.5 V 80 3 5V 4.5 V 0 0 0 1 2 3 4 5 0 20 40 V DS [V] 60 80 100 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 300 200 250 160 200 g fs [S] I D [A] 120 150 80 100 175 °C 50 25 °C 40 0 0 0 2 4 6 8 Rev. 1.01 0 50 100 150 I D [A] V GS [V] page 5 2006-02-14 IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 4 14 3.5 12 1800 µA 3 180 µA 2.5 8 V GS(th) [V] R DS(on) [mΩ] 10 98 % 6 typ 2 1.5 4 1 2 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 103 104 25 °C Ciss 175 °C 175 °C, 98% 2 10 25 °C, 98% I F [A] C [pF] Coss 103 Crss 101 102 101 100 0 20 40 60 80 V DS [V] Rev. 1.01 0 0.5 1 1.5 2 V SD [V] page 6 2006-02-14 IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD 1000 12 40 V 10 20 V 100 60 V 8 V GS [V] I AS [A] 25 °C 100 °C 150 °C 10 6 4 2 1 0 1 10 100 1000 0 20 40 60 80 100 120 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 100 V GS Qg V BR(DSS) [V] 95 90 V g s(th) 85 80 Q g (th) Q sw Q gs 75 -60 -20 20 60 100 140 Q gate Q gd 180 T j [°C] Rev. 1.01 page 7 2006-02-14 IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G PG-TO220-3: Outline Rev. 1.01 page 8 2006-02-14 IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G Rev. 1.01 page 9 2006-02-14 IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G Rev. 1.01 page 10 2006-02-14 IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.01 page 11 2006-02-14