MA4SW410B-1 HMIC™ Silicon PIN Diode Switch with Integrated Bias Network Rev. V4 Features Broad Bandwidth Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation Rugged, Glass Encapsulated Construction Fully Monolithic RoHS Compliant* and 260°C Reflow Compatible Description The MA4SW410B-1 device is a SP4T broadband switch with integrated bias network utilizing M/A-COM Technology Solutions HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. Yellow areas denote wire bond pads Parameter Absolute Maximum Operating Temperature -65oC to +125oC Storage Temperature -65oC to +150oC Junction Temperature +175oC Applied Reverse Voltage 50V Applications RF Incident Power +30dBm C.W. These high performance switches are suitable for use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80nS switching speeds can be achieved. Bias Current +25°C ± 40mA 1 Note: 1. Maximum operating conditions for a combination of RF power, D.C. bias and temperature: * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4SW410B-1 HMIC™ Silicon PIN Diode Switch with Integrated Bias Network Rev. V4 MA4SW410B-1 (SP4T) Electrical Specifications @ TAMB = +25oC, 10mA Bias current Parameter Insertion Loss Isolation Input Return Loss Switching Speed1 Frequency Minimum Nominal Maximum Units 6 GHz 12 GHz 18 GHz 6 GHz 12 GHz 18 GHz 6 GHz 12 GHz 18 GHz - 40 35 30 - 0.80 1.00 1.40 50 40 35 10 15 10 80 1.0 1.2 1.6 - dB dB dB dB dB dB dB dB dB ns Note: 1.Typical switching speed measured from 10% to 90% of detected RF signal driven by TTL compatible drivers using RC output spiking network, R = 50 – 200Ω , C = 390 – 560pF. Operation of the MA4SW410B-1 Operation of the HMIC Series of PIN switches is achieved by the simultaneous application of negative DC current to the low loss port and positive DC current to the remaining isolated switching ports per the Driver Connections table below. The control currents should be supplied by constant current sources. For insertion loss, -10mA bias results in approximately –2V, and for Isolation ,+10mA yields approximately +0.9V at the respective bias nodes. The backside area of the die is the RF and DC return ground plane. Driver Connections CONTROL LEVEL (DC CURRENT) CONDITION OF RF OUTPUT B2 B3 B4 B5 J1-J2 J1-J3 J1-J4 J1-J5 -10mA +10mA +10mA +10mA Low Loss Isolation Isolation Isolation +10mA -10mA +10mA +10mA Isolation Low Loss Isolation Isolation +10mA +10mA -10mA +10mA Isolation Isolation Low Loss Isolation +10mA +10mA +10mA -10mA Isolation Isolation Isolation Low Loss 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4SW410B-1 HMIC™ Silicon PIN Diode Switch with Integrated Bias Network Rev. V4 Typical RF Performance @ TAMB = +25°C (Probed on Wafer) MA4SW410B-1 Typical Insertion Loss MA4SW410B-1 Typical Isolation 0 0 -5 - 10 -1 - 15 - 20 - 25 -2 dB dB - 30 - 35 - 40 -3 - 45 - 50 - 55 -4 - 60 - 65 - 70 -5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 2 18 3 4 5 6 7 Frequency (Ghz) J1to J2 J1to J3 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) J1to J4 J1to J5 J1to J2 J1to J3 J1to J4 J1to J5 MA4SW410B-1 Typical Return Loss 0 -5 dB - 10 - 15 - 20 - 25 - 30 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Input RL J2 RL J3 RL J4 RL J5 RL 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4SW410B-1 HMIC™ Silicon PIN Diode Switch with Integrated Bias Network Rev. V4 MA4SW410B-1 Schematic 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4SW410B-1 HMIC™ Silicon PIN Diode Switch with Integrated Bias Network Rev. V4 MA4SW410B-1 Chip Outline Drawing1,2 I I H G F F A E E D D C C B DIM A B C D E F G H I RF Bond Pads (J1-J6) DC Bond Pads (B2-B5) Chip Thickness Mils MIN Millimeters MAX 85 89 106 110 48 52 7 11 33 34 57 61 77 81 46 50 24 28 7 X 5 REF. 5 X 5 REF. 5 REF. MIN MAX 2.17 2.27 2.69 2.79 1.22 1.32 0.17 0.27 0.85 0.86 1.46 1.56 1.96 2.06 1.18 1.28 0.61 0.71 .178 X .127 REF. .127 X .127 REF. 0.127 REF. Notes: 1. Topside and backside metallization is gold , 2.5µM thick typical. 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4SW410B-1 HMIC™ Silicon PIN Diode Switch with Integrated Bias Network Rev. V4 Wire/Ribbon and Die Attachment Recommendations Cleanliness These chips should be handled in a clean environment. Wire Bonding Thermosonic wedge wire bonding using 0.00025” x 0.003” ribbon or 0.001” diameter gold wire is recommended. A heat stage temperature of 150oC and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required to achieve a good bond. RF bond wires should be kept as short and straight as possible. Mounting The HMIC switches have Ti-Pt-Au back metal. They can be die mounted with a gold-tin eutectic solder preform or conductive epoxy. Mounting surface must be clean and flat. *Note: This device utilizes a process step designed to have minimal to non-existent burring around the perimeter of the die. Eutectic Die Attachment An 80/20, gold-tin, eutectic solder preform is recommended with a work surface temperature of 255oC and a tool tip temperature of 265oC. When hot gas is applied, the tool tip temperature should be 290oC. The chip should not be exposed to temperatures greater than 320oC for more than 20 seconds. No more than three seconds should be required for attachment. Solders containing tin should not be used. Epoxy Die Attachment A minimum amount of epoxy should be used. A thin epoxy fillet should be visible around the perimeter of the chip after placement. Cure epoxy per manufacturer’s schedule. (typically 125-150oC). Ordering Information Part Number Package MA4SW410B-1 Gel Pack (25 Per) MASW-004102-12760W Waffle Pack (25 Per) 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.