MASW-004100-1193 HMIC™ SP4T Silicon PIN Diode Switch V3 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling RoHS Compliant Description The MASW-004100-1193 is a SP4T, series-shunt, broad band, PIN diode, switch made with M/A-COM Tech’s unique HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows for the incorporation of silicon pedestals that form the series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of silicon and glass gives HMIC switches exceptional low loss and remarkable high isolation through low millimeterwave frequencies. J4 J3 Applications This high performance switch is suitable for use in multi-band ECM, radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 50nS switching speeds are achieved. Absolute Maximum Ratings J2 J5 TAMB = +25°C ( Unless Otherwise Specified ) Parameter Value Operating Temperature -65°C to +125°C Storage Temperature -65°C to +150°C RF C.W. Incident Power (± 20mA) +33dBm Bias Current ( Forward ) ± 20mA Applied Voltage ( Reverse ) -25 Volts J1 Notes: Exceeding these limits may cause permanent damage. 1 Maximum operating conditions for the combination of RF Power, D.C. Bias, and temperature: +33dBm, @ 15mA/Diode @ +85°C ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-004100-1193 HMIC™ SP4T Silicon PIN Diode Switch V3 Typical Driver Connections Control Level ( DC Current ) at Port J2 -20mA +20mA +20mA +20mA J3 +20mA -20mA +20mA +20mA J4 +20mA +20mA -20mA +20mA J5 +20mA +20mA +20mA -20mA Condition of RF Output Condition of RF Output Condition of RF Output Condition of RF Output J1-J2 Low Loss Isolation Isolation Isolation J1-J3 Isolation Low Loss Isolation Isolation J1-J4 Isolation Isolation Low Loss Isolation J1-J5 Isolation Isolation Isolation Low Loss Electrical Specifications TAMB = +25oC, ± 20mA Bias Current (On-Wafer Measurements) Parameter Frequency Insertion Loss 20 GHz Isolation 20 GHz Input Return Loss Minimum 28 Nominal Maximum Units 0.9 1.3 dB 34 dB 20 GHz 15 dB Output Return Loss 20 GHz 15 dB Switching Speed1 10 GHz 50 nS Notes: Typical switching speed is measured from 10% to 90% of detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390pF – 560pF and a resistor between 150Ω – 220Ω to achieve 50nS rise and fall times. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-004100-1193 HMIC™ SP4T Silicon PIN Diode Switch V3 Operation of the MASW-004100-1193 Switch The simultaneous application of negative DC current to the low loss port and positive DC current to the remaining isolated ports as shown in Figure 1 will operate the MASW-004100-1193 PIN diode switch. The backside metalized area of the die is the RF and DC return ground plane. The DC return is achieved on common Port J1. A current source should be used to supply the DC control currents. The voltages at these points will not exceed ±1.5 volts and are typically 1.2 volts for supply currents up to ± 20 mA. For the port in low loss state, the series diode must be forward biased and the shunt diode reverse biased. For all the isolated ports, the shunt diode is forward biased and the series diode is reverse biased. A typical bias network design which should provide >30 dB RF to DC isolation is shown in Figure 1. Best insertion loss, P1dB, IP3, and switching speed are achieved by using a voltage pull-up resistor in the DC return path, J1 (not shown). A minimum value of |-2V| is recommended at this return node and can be obtained using a standard, 65V, TTL controlled, PIN diode driver. 2 – 18 GHz Bias Network Schematic J1 39 pF 22 pF DC Bias 39 pF 22nH 100 Ω 22nH HMIC Switch Die J5 22 pF J4 J2 J3 Fig. 1 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-004100-1193 HMIC™ SP4T Silicon PIN Diode Switch V3 Typical Microwave Performance MASW-004100-1193 INSERTION LOSS Loss (dB) 0.0 -0.5 J1-J2 J1-J3 -1.0 J1-J4 J1-J5 -1.5 -2.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Frequency (GHz) MASW-004100-1193 INPUT RETURN LOSS 0 R. Loss (dB) -10 -20 J1-J2 J1-J3 -30 J1-J4 -40 J1-J5 -50 -60 0 5 10 15 20 25 30 Frequency (GHz) 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-004100-1193 HMIC™ SP4T Silicon PIN Diode Switch V3 Typical Microwave Performance MASW-004100-1193 OUTPUT RETURN LOSS 0 R. Loss(dB) -5 -10 J2 -15 J3 -20 J4 J5 -25 -30 -35 0 5 10 15 20 25 30 Frequency (GHz) MASW-004100-1193 ISOLATION 0 -10 Isolation (dB) -20 -30 J1-J2 -40 J1-J3 -50 J1-J4 -60 J1-J5 -70 -80 -90 0 5 10 15 20 25 30 Frequency (GHz) 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-004100-1193 HMIC™ SP4T Silicon PIN Diode Switch V3 ASSEMBLY INSTRUCTIONS Cleanliness The chip should be handled in a clean environment free of organic contamination. Electro-Static Sensitivity The MASW-004100-1193 PIN switch is ESD, Class 1A sensitive (HBM). The proper ESD handling procedures must be used. Wire Bonding Thermosonic wedge bonding using 0.003” x 0.00025” ribbon or 0.001” diameter gold wire is recommended. A stage temperature of 150°C and a force of 18 to 22 grams should be used. Ultrasonic energy, if necessary, should be adjusted to the minimum power required to achieve a good bond. RF wire and ribbon lengths should be kept as short as possible to minimize parasitic inductance. Mounting These chips have Ti-Pt-Au back metal and can be mounted using 80Au/20Sn eutectic solder or electrically conductive Ag epoxy. Mounting surface must be flat and clean of oils and contaminants. Eutectic Die Attachment An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255°C and a tool tip temperature of 265°C. When hot gas is applied, the tool tip temperature should be 290°C. The chip should not be exposed to temperatures greater than 320°C for more than 10 seconds. No more than 3 seconds should be required for the die attachment. Silver Epoxy Die Attachment A controlled thickness of no more than 2 mils is recommended for the best electrical and thermal conductivity. A thin epoxy fillet should be visible around the perimeter of the chip after placement to ensure complete coverage. Cure epoxy per manufacturer’s recommended schedule. Typically +150°C for 1 hour. 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-004100-1193 HMIC™ SP4T Silicon PIN Diode Switch V3 MASW-004100-1193 Chip Dimensions INCHES MM NOMINAL NOMINAL A .066 1.67 B .047 1.19 C .054 1.37 D .012 0.31 E .043 1.08 F .009 0.22 G .004 0.11 H .004 0.11 I .033 0.84 J .061 1.56 Thickness .005 .120 Bond Pads .005X.005 0.120X.0120 DIM Notes: 1. 2. Topside and backside metallization is gold , 2.5mm thick typical. Yellow areas indicate wire bonding pads Ordering Information Part Number Package MASW-004100-11930W Waffle Pack MASW-004100-11930G Gel Pack 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.