MASW-005100-1194 HMIC™ Silicon PIN Diode Switch RoHs Compliant Rev. V3 FEATURES Ultra Broad Bandwidth: 50MHz to 26GHz 1.0 dB Insertion Loss 30 dB Isolation at 20GHz Reliable. Fully Monolithic Glass Encapsulated Construction +33dBm Input Power DESCRIPTION The MASW-005100-1194 is a SP5T Series-Shunt broad band switch made with M/A-COM’s HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through low millimeter-wave frequencies. APPLICATIONS These high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5 V/-5 V, TTL controlled PIN diode driver, 50ns switching speeds are achieved. ABSOLUTE MAXIMUM RATINGS TAMB = +25°C ( Unless otherwise specified ) PARAMETER OPERATING TEMPERATURE STORAGE TEMPERATURE RF C.W. INCIDENT POWER (± 20 mA ) BIAS CURRENT ( FORWARD ) APPLIED VOLTAGE ( REVERSE ) VALUE - 65°C to +150°C - 65°C to +175°C +33dBm ± 20mA - 25V Note:Exceeding any of these values may result in permanent damage. Maximum operating conditions for combination of RF power, D.C. bias and temperature: +30dBm C.W., 15mA per diode @+85°C 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-005100-1194 HMIC™ Silicon PIN Diode Switch RoHs Compliant Rev. V3 TYPICAL DRIVER CONNECTIONS CONTROL LEVEL ( DC CURRENT ) J2 J3 J4 -20 mA +20 mA +20 mA +20 mA -20 mA CONDITION OF RF OUTPUT J5 J6 J2-J1 J3-J1 J4-J1 J5-J1 J6-J1 +20 mA +20 mA Low Loss Isolation Isolation Isolation Isolation +20 mA +20 mA +20 mA Isolation Low Loss Isolation Isolation Isolation +20 mA +20 mA -20 mA +20 mA +20 mA Isolation Isolation Low Loss Isolation Isolation +20 mA +20 mA +20 mA -20 mA +20 mA Isolation Isolation Isolation Low Loss Isolation +20 mA +20 mA +20 mA +20 mA -20 mA Isolation Isolation Isolation Isolation Low Loss Electrical Specifications @ TAMB = 25°C, ± 20 mA bias current (on-wafer measurements) RF SPECIFICATIONS PARAMETER FREQUENCY INSERTION LOSS 20GHz ISOLATION 20GHz INPUT RETURN LOSS MIN 28 TYP MAX UNITS 0.9 1.4 dB 38 dB 20GHz 22 dB OUTPUT RETURN LOSS 20GHz 23 dB SWITCHING SPEED 10GHz 50 nS 1 Note: 1.) Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390pF - 560pF and a resistor between 150Ω - 220Ω to achieve 50ns rise and fall times. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-005100-1194 HMIC™ Silicon PIN Diode Switch RoHs Compliant Rev. V3 Typical Microwave Performance INSERTION LOSS LOSS ( dB ) 0.000 -0.200 -0.400 -0.600 -0.800 -1.000 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 16.0 18.0 20.0 FREQUENCY ( GHz ) J2 J3 J4 J5 J6 12.0 14.0 ISOLATION 0 ISOLATION ( dB ) -10 -20 -30 -40 -50 -60 -70 -80 0.0 2.0 4.0 6.0 8.0 10.0 FREQUENCY ( GHz ) J2 J3 J4 J5 J6 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-005100-1194 HMIC™ Silicon PIN Diode Switch RoHs Compliant Rev. V3 Typical Microwave Performance OUTPUT RETURN LOSS LOSS ( dB ) 0.000 -5.000 -10.000 -15.000 -20.000 -25.000 -30.000 -35.000 -40.000 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 16.0 18.0 20.0 FREQUENCY ( GHz ) J2 J3 J4 J5 J6 INPUT RETURN LOSS 0. -5. -10. -15. LOSS -20. (dB) -25. -30. -35. -40. 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 FREQUENCY ( GHz ) J2 J3 J4 J5 J6 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-005100-1194 HMIC™ Silicon PIN Diode Switch RoHs Compliant Rev. V3 Operation of the MASW-005100-1194 Switch The simultaneous application of negative DC current to the Low Loss Port and positive DC current to the remaining Isolated Ports as shown in Figure 1 achieves operation of the MASW-005100-1194 diode switch. The backside area of the die is the RF and DC return ground plane. The DC return is achieved on common Port J1. Constant current sources should supply the DC control currents. The voltages at these points will not exceed ±1.5 volts (1.2 volts typical) for supply currents up to ± 20 mA. In the Low Loss state, the Series Diode must be forward biased and the Shunt Diode reverse biased. For all the isolated ports, the Shunt Diode is forward biased and the Series Diode is reverse biased. The bias network design should yield >30 dB RF to DC isolation. Best Insertion Loss, P1dB, IP3, and switching speed are achieved by using a voltage pull-up resistor in the DC return path, ( J1 ). A minimum value of | -2V | is recommended at this return node, which is achievable with a standard , 65V TTL controlled PIN diode driver. A typical DC bias schematic for 2-18 GHz operation is shown in Figure 1. 2 – 18 GHz Bias Network Schematic J1 39 pF 22 pF DC Bias 39 pF 22 nH 100 Ω 22 nH HMIC Switch Die J6 22 pF J5 J4 J2 J3 Fig. 1 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-005100-1194 HMIC™ Silicon PIN Diode Switch RoHs Compliant Rev. V3 ASSEMBLY INSTRUCTIONS Cleanliness These chips should be handled in a clean environment free of organic contamination. Electro-Static Sensitivity The MASW-00 Series PIN switches are ESD, Class 1A sensitive (HBM). The proper ESD handling procedures must be used. Wire Bonding Thermosonic wedge wire bonding using 0.003” x 0.00025” ribbon or 0.001” diameter gold wire is recommended. A stage temperature of 150°C and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required. RF ribbon and wire bonds should be kept as short as possible to minimize parasitic inductance. Mounting These chips have Ti-Pt-Au back metal. They can be die mounted with a 80Au/20Sn or electrically conductive Ag epoxy. Mounting surface must be flat and clean of oils and contaminants. Eu Eutectic Die Attachment An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255°C and a tool tip temperature of 265°C. When hot gas is applied, the tool tip temperature should be 290°C. The chip should not be exposed to temperatures greater than 320°C for more than 10 seconds. No more than 3 seconds should be required for the die attachment. Silver Epoxy Die Attachment Assembly should be preheated to 125°C-150°C. A Controlled thickness of 2 mils is recommended for best electrical and thermal conductivity. A thin epoxy fillet should be visible around the perimeter of the chip after placement to ensure complete coverage. Cure epoxy per manufacturer’s recommended schedule. 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-005100-1194 HMIC™ Silicon PIN Diode Switch RoHs Compliant Rev. V3 MASW-005100-1194 Chip Dimensions A Chip Dimensions* B C G D F DIM INCHES μM A 0.0680 1723 B 0.0340 858 C 0.0580 1473 D 0.0370 938 E 0.0295 750 F 0.0295 750 G 0.0325 825 All Pads .005 X .005 120 X 120 Thickness 0.005 127 *All chip dimension tolerances are ±.0005” E ORDERING INFORMATION Part Number Package MASW-005100-11940W Waffle Pack MASW-005100-11940G Gel Pack 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.