ONSEMI MMBT4124LT1G

MMBT4124LT1G
General Purpose Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
25
Vdc
Collector−Base Voltage
VCBO
30
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
IC
200
mAdc
Symbol
Max
Unit
225
1.8
W
mW/°C
556
°C/W
300
2.4
W
mW/°C
RJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Collector Current − Continuous
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR−5 Board (Note 1) @TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) @TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
3
PD
RJA
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
ZC M G
G
ZC = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT4124LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 2
1
Publication Order Number:
MMBT4124LT1/D
MMBT4124LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IE = 0)
V(BR)CEO
25
−
Vdc
Collector−Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
30
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
−
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
−
50
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
−
50
nAdc
120
60
360
−
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 2.0 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage (Note 3)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
−
0.3
Vdc
Base−Emitter Saturation Voltage (Note 3)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
−
0.95
Vdc
fT
300
−
MHz
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
8.0
pF
Collector−Base Capacitance
(IE = 0, VCB = 5.0 V, f = 1.0 MHz)
Ccb
−
4.0
pF
Small−Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k , f = 1.0 kHz)
hfe
120
480
−
Current Gain − High Frequency
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
|hfe|
3.0
120
−
480
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz)
NF
−
5.0
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
−
dB
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
200
10
100
5.0
TIME (ns)
CAPACITANCE (pF)
7.0
Cibo
3.0
ts
70
50
td
30
tf
tr
20
Cobo
2.0
VCC = 3 V
IC/IB = 10
VEB(off) = 0.5 V
10.0
7.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTS)
5.0
20 30 40
1.0
Figure 1. Capacitance
2.0 3.0
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 2. Switching Times
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2
200
MMBT4124LT1G
AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
(VCE = 5 Vdc, TA = 25°C)
Bandwidth = 1.0 Hz
12
14
SOURCE RESISTANCE = 200 IC = 1 mA
f = 1 kHz
SOURCE RESISTANCE = 200 IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1 k
IC = 50 A
4
2
SOURCE RESISTANCE = 500 IC = 100 A
0
0.1
0.2
0.4
1
2
4
10
f, FREQUENCY (kHz)
IC = 1 mA
12
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
IC = 0.5 mA
10
IC = 50 A
8
IC = 100 A
6
4
2
20
40
0
0.1
100
0.2
0.4
Figure 3. Frequency Variations
1.0 2.0
4.0
10
20
RS, SOURCE RESISTANCE (k)
40
100
5.0
10
5.0
10
Figure 4. Source Resistance
h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25°C)
100
hoe , OUTPUT ADMITTANCE ( mhos)
hfe , CURRENT GAIN
300
200
100
70
50
30
50
20
10
5
2
1
0.1
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (mA)
5.0
10
0.1
0.2
Figure 5. Current Gain
Figure 6. Output Admittance
h re , VOLTAGE FEEDBACK RATIO (X 10-4 )
20
hie , INPUT IMPEDANCE (kΩ )
10
5.0
2.0
1.0
0.5
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (mA)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (mA)
5.0
10
0.1
Figure 7. Input Impedance
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (mA)
Figure 8. Voltage Feedback Ratio
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3
MMBT4124LT1G
STATIC CHARACTERISTICS
h FE , DC CURRENT GAIN (NORMALIZED)
2.0
TJ = +125°C
1.0
VCE = 1 V
+25°C
0.7
-55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 9. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1 mA
30 mA
10 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 10. Collector Saturation Region
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.2
TJ = 25°C
VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
1.0
0.8
VBE @ VCE = 1 V
0.6
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0
2.0
5.0
10
20
50
100
1.0
0.5
VC for VCE(sat)
0
-55°C to +25°C
-0.5
-55°C to +25°C
-1.0
+25°C to +125°C
VB for VBE(sat)
-1.5
-2.0
200
+25°C to +125°C
0
20
40
60
80
100
120
140
160
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
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4
180 200
MMBT4124LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
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MMBT4124LT1/D