MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −500 mAdc Collector Current − Continuous 1 BASE 2 EMITTER Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate Above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. 2L M G G SOT−23 (TO−236) CASE 318 STYLE 6 1 2L = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT5401LT1G SOT−23 (Pb−Free) 3000 Tape & Reel MMBT5401LT3G SOT−23 10,000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 December, 2010 − Rev. 9 1 Publication Order Number: MMBT5401LT1/D MMBT5401LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max −150 − −160 − −5.0 − − − −50 −50 50 60 50 − 240 − − − −0.2 −0.5 − − −1.0 −1.0 100 300 − 6.0 40 200 − 8.0 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −120 Vdc, IE = 0) (VCB = −120 Vdc, IE = 0, TA = 100°C) ICES Vdc Vdc Vdc nAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = −1.0 mAdc, VCE = −5.0 Vdc) (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −50 mAdc, VCE = −5.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz) fT Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo Small Signal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe Noise Figure (IC = −200 mAdc, VCE = −5.0 Vdc, RS = 10 W, f = 1.0 kHz) NF http://onsemi.com 2 MHz pF − dB MMBT5401LT1G 200 150 h FE, CURRENT GAIN TJ = 125°C 100 25°C 70 50 -55°C VCE = - 1.0 V VCE = - 5.0 V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 20 10 30 50 100 10 20 50 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 Figure 2. Collector Saturation Region 103 IC, COLLECTOR CURRENT (A) μ VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 102 VCE = 30 V IC = ICES 101 TJ = 125°C 100 75°C 10-1 10-2 REVERSE 25°C 10-3 0.3 0.2 FORWARD 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut−Off Region http://onsemi.com 3 0.6 0.7 MMBT5401LT1G 1.0 0.18 IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.20 0.15 0.13 150°C 0.10 25°C 0.08 0.05 −55°C 0.03 0 0.0001 0.001 0.01 25°C 0.7 150°C 0.6 0.5 0.4 0.3 0.0001 IC, COLLECTOR CURRENT (A) θV, TEMPERATURE COEFFICIENT (mV/ °C) VBE(on), BASE−EMITTER VOLTAGE (V) VCE = 10 V −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 2.5 1.5 1.0 0.5 -0.5 -1.0 -1.5 qVB for VBE(sat) -2.0 -2.5 0.1 0.1 qVC for VCE(sat) 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 6. Base Emitter Voltage vs. Collector Current 100 70 50 C, CAPACITANCE (pF) VCC -30 V 100 10 ms INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 mF 3.0 k RC Vout RB 5.1 k Vin 100 50 100 Figure 7. Temperature Coefficients 10.2 V Vin 0.1 TJ = - 55°C to 135°C 2.0 IC, COLLECTOR CURRENT (A) VBB +8.8 V 0.01 Figure 5. Base Emitter Saturation Voltage vs. Collector Current 1.1 0.9 0.001 IC, COLLECTOR CURRENT (A) Figure 4. Collector Emitter Saturation Voltage vs. Collector Current 1.0 −55°C 0.8 0.2 0.1 IC/IB = 10 0.9 TJ = 25°C 30 Cibo 20 10 7.0 5.0 Cobo 3.0 1N914 2.0 1.0 0.2 Values Shown are for IC @ 10 mA Figure 8. Switching Time Test Circuit 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) Figure 9. Capacitances http://onsemi.com 4 10 20 MMBT5401LT1G 1000 700 500 2000 IC/IB = 10 TJ = 25°C tr @ VCC = 120 V tr @ VCC = 30 V 200 t, TIME (ns) t, TIME (ns) 300 1000 700 500 100 70 50 td @ VBE(off) = 1.0 V VCC = 120 V 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 200 ts @ VCC = 120 V 30 50 100 20 0.2 0.3 0.5 200 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 10. Turn−On Time Figure 11. Turn−Off Time 50 100 200 1 VCE = 1 V TA = 25°C IC, COLLECTOR CURRENT (A) fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) tf @ VCC = 30 V 300 1000 100 10 tf @ VCC = 120 V 100 70 50 30 20 IC/IB = 10 TJ = 25°C 0.1 1 10 100 10 mSec 0.1 1 Sec 0.01 0.001 1 IC, COLLECTOR CURRENT (A) 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Current Gain Bandwidth Product Figure 13. Safe Operating Area http://onsemi.com 5 1000 MMBT5401LT1G PACKAGE DIMENSIONS SOT−23−3 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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