Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBD914 Features • • • Low Current Leakage Low Cost Small Outline Surface Mount Package 350mW 100 Volt Silicon Epitaxial Diode C Pin Configuration Top View 5D SOT-23 A A D Maximum Ratings • • • C Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Maximum Thermal Resistance; 357K/W Junction To Ambient Electrical Characteristics @ 25°C Unless Otherwise Specified Reverse Voltage Peak Reverse Voltage Average Rectified Current Power Dissipation Junction Temperature Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance Reverse Recovery Time VR VRM 75V 100V IO 150mA PTOT TJ 350mW 175°C IFSM 1.0A VF .855V IFM = 10mA; TJ = 25°C* IR 25nA TJ = 25°C VR =20Volts CJ F B E H G J DIMENSIONS Resistive Load f > 50Hz t=1s,Non-Repetitive Measured at 1.0MHz, VR=0V Trr 4nS IF=10mA VR = 6V RL=100Ω *Pulse test: Pulse width 300 µsec, Duty cycle 2% DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 2pF .037 .950 www.cnelectr.com .037 .950 inches mm 1000 10,000 100 IR, LEAKAGE CURRENT (nA) IF, INSTANTANEOUS FORWARD CURRENT (mA) MMBD914 10 1.0 0.1 1000 100 10 VR = 20V 1 0.01 0 1 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics 0 100 200 Tj, JUNCTION TEMPERATURE (°C) Fig. 2 Leakage Current vs Junction Temperature www.cnelectr.com