CHENYI DL4154

Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
DL4154
Features
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Fast Switching Speed
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Low Current Leakage
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Low Cost
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Compression Bond Construction
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Surface Mount Application
Schottky Barrier
Switching Diode
Maximum Ratings
o
MINIMELF
o
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Operation & Storage Temperature: -55 C to +150 C
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Maximum Thermal Resistance: 400k/W Junction to Ambient
Electrical Characteristics @ 25oC Unless Otherwise Specified
Reverse Voltage
VR
25V
Peak Reverse Voltage
VRM
35V
IO
150mA
P TOT
TJ
500mW
VF
1.0V
IR
0.1uA
Average Rectified
Current
Power Dissipation
Junction Temperature
Maximum Instantaneous
Forward Volt.
Maximum DC Reverse
Current At Rated DC
Blocking Volt.
Typical Junction
Capacitance
Reverse Recovery Time
CJ
T rr
Cathode Mark
Resistive Load
f>50Hz
C
175 o C
B
IFM=10mA;
A
o
T J=25 C
VR =25V
T J=25 oC
4pF
Measured at
1.0MHz, V R =4.0V
2nS
IF=10mA V R =6V
IR =1mA
R L=100OHMS
DIMENSION
DIM
INCHES
MM
NOTE
MIN
MAX
MIN
MAX
A
B
.134
.008
.142
.016
3.40
.20
3.60
.40
C
.055
.059
1.40
1.50
SUGGESTED SOLDER
PAD LAYOUT
Pulse test: Pulse width 300 usec, Duty cycle 2%.
0.105
0.075”
0.030”
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DL4154
1000
IF, FORWARD CURRENT (mA)
Pd, POWER DISSIPATION (mW)
500
400
300
200
100
0
0
100
100
0.1
0
1
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
10,000
IR, LEAKAGE CURRENT (nA)
RELATIVE CAPACITANCE RATIO
[CTOT(VR)/CTOT(0V)]
2
VF, FORWARD VOLTAGE (V)
Fig. 2 Forward Characteristics
Tj = 25°C
f = 1.0MHz
1.1
Tj = 25°C
1.0
0.01
200
Tj = 100°C
10
1.0
0.9
0.8
1,000
100
10
0.7
0
2
4
6
8
VR, REVERSE VOLTAGE (V)
Fig. 3 Relative Capacitance Variation
10
1
0
100
200
Tj, JUNCTION TEMPERATURE (°C)
Fig. 4 Leakage Current vs Junction Temperature
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