MMBD452LT1G Dual Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. Features • • • • Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 30 VOLTS DUAL HOT−CARRIER DETECTOR AND SWITCHING DIODES 1 ANODE 3 CATHODE/ANODE MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25°C Derate above 25°C PF Operating Junction Temperature Range Storage Temperature Range 3 225 1.8 mW mW/°C TJ −55 to +125 °C Tstg −55 to +150 °C 1 2 5N M G G 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) SOT−23 (TO−236) CASE 318 STYLE 11 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Characteristic 2 CATHODE 5N = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) Symbol Min Typ Max Unit V(BR)R 30 − − V Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT − 0.9 1.5 pF *Date Code orientation and/or overbar may vary depending upon manufacturing location. Reverse Leakage (VR = 25 V) Figure 3 IR − 13 200 nAdc ORDERING INFORMATION Forward Voltage (IF = 1.0 mAdc) Figure 4 VF − 0.38 0.45 Vdc Forward Voltage (IF = 10 mAdc) Figure 4 VF − 0.52 0.6 Vdc Reverse Breakdown Voltage (IR = 10 mA) © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 4 1 Device MMBD452LT1G Package Shipping† SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBD452LT1/D MMBD452LT1G TYPICAL ELECTRICAL CHARACTERISTICS 2.8 500 t , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) f = 1.0 MHz 2.4 2.0 1.6 1.2 0.8 0.4 400 KRAKAUER METHOD 300 200 100 0 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 20 Figure 2. Minority Carrier Lifetime 10 TA = 100°C 1.0 75°C 0.1 25°C 0.01 0.001 10 10 TA = -40°C TA = 85°C 1.0 TA = 25°C 0.1 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.2 Figure 3. Reverse Leakage IF(PEAK) 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) STORAGE CONDUCTION PADS DUT Figure 5. Krakauer Method of Measuring Lifetime http://onsemi.com 2 SAMPLING OSCILLOSCOPE (50 W INPUT) 1.2 MMBD452LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 3 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your loca Sales Representative MMBD452LT1/D