BAS40L, SBAS40L Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 40 VOLTS SCHOTTKY BARRIER DIODES MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 40 V Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 225 1.8 mW mW/°C TJ, Tstg −55 to +150 °C IF 120 mA Operating Junction and Storage Temperature Range Forward Continuous Current Forward Surge Current tv1s t v 10 ms IFSM Thermal Resistance (Note 1) Junction−to−Ambient (Note 2) RqJA 200 600 508 311 SOT−23 (TO−236) CASE 318 STYLE 8 3 CATHODE 1 ANODE MARKING DIAGRAM mA B1 M G G °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ minimum pad. 2. FR−4 @ 1.0 x 1.0 in pad. B1 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BAS40LT1G, SBAS40LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel BAS40LT3G, SBAS40LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 10 1 Publication Order Number: BAS40LT1/D BAS40L, SBAS40L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 mA) V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 1.0 mAdc) VF Forward Voltage (IF = 10 mAdc) VF Forward Voltage (IF = 40 mAdc) VF IR , REVERSE CURRENT (μA) 100 10 150°C 1.0 125°C 85°C 25°C -40°C 0.1 0 0.1 0.2 0.3 -55°C 0.4 Max 40 − − 5.0 − 1.0 − 380 − 500 − 1.0 Unit V pF mAdc mVdc mVdc Vdc TA = 150°C 125°C 10 85°C 1.0 0.1 25°C 0.01 0.001 0.5 0.6 0.7 0 0.8 5.0 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10 15 VR, REVERSE VOLTAGE (VOLTS) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5.0 20 Figure 2. Reverse Current versus Reverse Voltage 3.5 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 Min 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 2 35 40 25 BAS40L, SBAS40L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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