BAS40-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features • Extremely Fast Switching Speed • Low Forward Voltage • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com 40 VOLTS SCHOTTKY BARRIER DIODES Compliant ANODE 1 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 40 V Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 225 1.8 mW mW/°C −55 to +150 °C Operating Junction and Storage Temperature Range Forward Continuous Current Single Forward Current tv1s t v 10 ms Thermal Resistance Junction−to−Ambient TJ, Tstg IFM 120 mA IFSM 200 600 mA RqJA 508 (Note 1) 311 (Note 2) °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ minimum pad. 2. FR−4 @ 1.0 x 1.0 in pad. CATHODE 2 3 CATHODE/ANODE MARKING DIAGRAM 3 1 CB MG G 2 SOT−23 (TO−236AB) CASE 318 STYLE 11 1 CB = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device BAS40−04LT1G Package SOT−23 (Pb−Free) Shipping† 3000/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 10 1 Publication Order Number: BAS40−04LT1/D BAS40−04LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage Total Capacitance (IR = 10 mA) (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Symbol Min Max Unit V(BR)R 40 − V CT − 5.0 pF IR − 1.0 mA Forward Voltage (IF = 1.0 mA) VF − 380 mV Forward Voltage (IF = 10 mA) VF − 500 mV Forward Voltage (IF = 40 mA) VF − 1.0 V http://onsemi.com 2 BAS40−04LT1G IR , REVERSE CURRENT (μA) 100 10 150°C 1.0 125°C 85°C 25°C -40°C 0.1 0 0.1 TA = 150°C 125°C 10 85°C 1.0 0.1 25°C 0.01 0.2 0.3 -55°C 0.4 0.001 0.5 0.6 0.7 0 0.8 5.0 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10 15 VR, REVERSE VOLTAGE (VOLTS) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5.0 20 Figure 2. Reverse Current versus Reverse Voltage 3.5 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 3 35 40 25 BAS40−04LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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