MMBZ27VCWT1G 40 Watt Peak Power Zener Transient Voltage Suppressors SC−70 Dual Common Cathode Zeners for ESD Protection http://onsemi.com These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common cathode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. 1 3 2 PIN 1. ANODE 2. ANODE 3. CATHODE MARKING DIAGRAM Specification Features: • SC−70 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration • Working Peak Reverse Voltage Range − 22 V • Standard Zener Breakdown Voltage − 27 V • Peak Power − 40 W @ 1.0 ms (Bidirectional), per Figure 4 Waveform Body Model Low Leakage < 100 nA Flammability Rating: UL 94 V−O This is a Pb−Free Device ORDERING INFORMATION Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds © Semiconductor Components Industries, LLC, 2008 May, 2008 − Rev. 0 1 AC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) • ESD Rating of Class N (exceeding 16 kV) per the Human • • • AC MG G SC−70 CASE 419 STYLE 4 1 Device Package Shipping† MMBZ27VCWT1G SC−70 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBZ27VCW/D MMBZ27VCWT1G MAXIMUM RATINGS Symbol Value Unit Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C Rating Ppk 40 Watts Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C Derate above 25°C °PD° 200 1.6 °mW° mW/°C Thermal Resistance Junction−to−Ambient RqJA 618 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 4 and derate above TA = 25°C per Figure 5. 2. FR−5 = 1.0 x 0.75 x 0.62 in. ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) IF UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT VBR VC VBR VRWM Working Peak Reverse Voltage V IR VF IT Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current IPP Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 1.1 V Max @ IF = 200 mA) VC @ IPP (Note 4) Breakdown Voltage Device MMBZ27VCWT1G VBR (Note 3) (V) Device Marking VRWM IR @ VRWM @ IT VC IPP VBR Volts nA Min Nom Max mA V A mV/5C AC 22 50 25.65 27 28.35 1.0 38 1.0 26 3. VBR measured at pulse test current IT at an ambient temperature of 25°C. 4. Surge current waveform per Figure 4 and derate per Figure 5 http://onsemi.com 2 MMBZ27VCWT1G BREAKDOWN VOLTAGE (VOLTS) (VBR @ I T ) TYPICAL CHARACTERISTICS 29 BIDIRECTIONAL 28 27 26 25 -55 +125 +25 +85 TEMPERATURE (°C) Figure 1. Typical Breakdown Voltage versus Temperature 100 250 PD , POWER DISSIPATION (mW) 300 IR (nA) 10000 10 1 0.1 0.01 -40 +25 +85 TEMPERATURE (°C) ALUMINA SUBSTRATE 200 150 100 FR-5 BOARD 50 0 +125 0 tr ≤ 10 ms PEAK VALUE—IPP VALUE (%) 100 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. IPP HALF VALUE— 2 50 tP 0 0 1 2 3 t, TIME (ms) 4 50 75 100 125 TEMPERATURE (°C) 150 175 Figure 3. Steady State Power Derating Curve PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25 ° C Figure 2. Typical Leakage Current versus Temperature 25 100 90 80 70 60 50 40 30 20 10 0 0 Figure 4. Pulse Waveform 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 5. Pulse Derating Curve http://onsemi.com 3 175 200 MMBZ27VCWT1G TYPICAL APPLICATIONS VBatt ECU Connector Single Wire CAN Transceiver 47 mH Bus RLoad 9.09 kW 1% * Load CLoad 220 pF 10% Loss of Ground Protection Circuit GND *ESD Protection − MMBZ27VCWT1 or equivalent. May be located in each ECU (CLoad needs to be reduced accordingly) or at a central point near the DLC. Figure 6. Single Wire CAN Network Figure is the recommended solution for transient EMI/ESD protection. This circuit is shown in the Society of Automotive Engineers February, 2000 J2411 “Single Wire CAN Network for Vehicle Applications” specification (Figure 6, page 11). Note: the dual common anode zener configuration shown above is electrically equivalent to a dual common cathode zener configuration. http://onsemi.com 4 MMBZ27VCWT1G PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE M D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 DIM A A1 A2 b c D E e e1 L HE 2 b e 0.05 (0.002) c A2 A 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE L A1 MIN 0.80 0.00 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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