SM05T1 Series Transient Voltage Suppressor Diode Array SOT−23 Dual Common Anode Diodes for ESD Protection These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. Specification Features: • SOT−23 Package Allows Either Two Separate Unidirectional • • • • • http://onsemi.com 1 PIN 1. CATHODE 2. CATHODE 3. ANODE 3 1 Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range − 5.0 V to 24 V Peak Power − 300 Watt (8 X 20 ms) Low Leakage Flammability Rating UL 94 V−0 These are Pb−Free Devices 3 2 SOT−23 CASE 318 STYLE 12 2 MARKING DIAGRAM xxM MG G 1 Mechanical Characteristics: CASE: Void-Free, Transfer-Molded, Thermosetting Plastic Case FINISH: Corrosion Resistant Finish, Easily Solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications Available in 8 mm Tape and Reel Use the Device Number to Order the 7 Inch/3,000 Unit Reel Replace the “T1” with “T3” in the Device Number to Order the 13 Inch/10,000 Unit Reel xxM = Device Code xx = 05, 12, 15, 24, 36 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† SM05T1G SOT−23 (Pb−Free) 3000/Tape & Reel SM12T1G SOT−23 (Pb−Free) 3000/Tape & Reel SM15T1G SOT−23 (Pb−Free) 3000/Tape & Reel SM24T1G SOT−23 (Pb−Free) 3000/Tape & Reel SM36T1G SOT−23 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 July, 2011 − Rev. 4 1 Publication Order Number: SM05T1/D SM05T1 Series MAXIMUM RATINGS Rating Symbol Value Unit Ppk 300 W ±15 ±8.0 kV IEC 61000−4−4 (EFT) 40 A IEC 61000−4−5 (Lightening) 12 A 225 1.8 556 °mW° mW/°C °C/W RqJA 300 2.4 417 °mW mW/°C °C/W TJ, Tstg − 55 to +150 °C TL 260 °C Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C IEC 61000−4−2 (ESD) Air Contact Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient °PD° RqJA Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient °PD Junction and Storage Temperature Range Lead Solder Temperature − Maximum (10 Second Duration) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Non−repetitive current pulse per Figure 3 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina NOTE: Other voltages may be available upon request ELECTRICAL CHARACTERISTICS UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT QVBR I IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT VC VBR VRWM Test Current Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK V IR VF IT IPP Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) IT VC @ IPP = 1 Amp Max IPP (Note 4) VBR, Breakdown Voltage VRWM IR @ VRWM (Volts) Typical Capacitance (pF) Device Device Marking (Volts) (mA) Min Max mA (Volts) (Amps) Pin 1 to 3 @ 0 Volts SM05T1G 05M 5 10 6.2 7.3 1.0 9.8 17 225 SM12T1G 12M 12 1.0 13.3 15.75 1.0 19 12 95 SM15T1G 15M 15 1.0 16.7 19.6 1.0 24 10 100 SM24T1G 24M 24 1.0 26.7 31.35 1.0 43 5.0 60 SM36T1G 36M 36 1.0 40.0 46.95 1.0 60 4.0 45 4. 8 × 20 ms pulse waveform per Figure 3 http://onsemi.com 2 SM05T1 Series TYPICAL CHARACTERISTICS 300 PD, POWER DISSIPATION (mW) PPP, PEAK PULSE POWER (kW) 10 1 0.1 0.01 0.1 1 100 10 tp, PULSE DURATION (ms) 250 150 100 FR−5 BOARD 50 0 1000 ALUMINA SUBSTRATE 200 0 Figure 1. Non−Repetitive Peak Pulse Power versus Pulse Time C, CAPACITANCE (pF) 70 60 50 HALF VALUE IRSM/2 @ 20 ms 40 30 tP 20 75 100 125 TEMPERATURE (°C) 150 175 250 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 50 Figure 2. Steady State Power Derating Curve PEAK VALUE IRSM @ 8 ms tr 90 210 170 130 10 0 0 20 40 60 90 80 0 1 t, TIME (ms) 2 3 BIAS VOLTAGE (VOLTS) 100 90 80 70 60 50 40 30 20 10 0 0 4 Figure 4. Typical Diode Capacitance (SM05) Figure 3. 8 × 20 ms Pulse Waveform C, CAPACITANCE (pF) % OF PEAK PULSE CURRENT 100 25 1 5 8 BIAS VOLTAGE (VOLTS) 12 Figure 5. Typical Diode Capacitance (SM12) http://onsemi.com 3 5 SM05T1 Series TYPICAL COMMON ANODE APPLICATIONS A quad junction common anode design in a SOT−23 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below. Computer Interface Protection A KEYBOARD TERMINAL PRINTER ETC. B C I/O D FUNCTIONAL DECODER GND SM05T1 Series Microprocessor Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS CPU I/O SM05T1 Series CLOCK CONTROL BUS GND SM05T1 Series http://onsemi.com 4 SM05T1 Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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